JP2020533760A5 - - Google Patents

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Publication number
JP2020533760A5
JP2020533760A5 JP2020514947A JP2020514947A JP2020533760A5 JP 2020533760 A5 JP2020533760 A5 JP 2020533760A5 JP 2020514947 A JP2020514947 A JP 2020514947A JP 2020514947 A JP2020514947 A JP 2020514947A JP 2020533760 A5 JP2020533760 A5 JP 2020533760A5
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JP
Japan
Prior art keywords
photocathode
barrier
layer
thermionic
conduction band
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JP2020514947A
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English (en)
Japanese (ja)
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JP2020533760A (ja
JP7227230B2 (ja
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Priority claimed from US15/702,647 external-priority patent/US10692683B2/en
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Publication of JP2020533760A5 publication Critical patent/JP2020533760A5/ja
Application granted granted Critical
Publication of JP7227230B2 publication Critical patent/JP7227230B2/ja
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JP2020514947A 2017-09-12 2018-09-12 熱アシスト負電子親和性フォトカソード Active JP7227230B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/702,647 2017-09-12
US15/702,647 US10692683B2 (en) 2017-09-12 2017-09-12 Thermally assisted negative electron affinity photocathode
PCT/US2018/050735 WO2019055554A1 (en) 2017-09-12 2018-09-12 PHOTOCATHODE WITH THERMALLY ASSISTED NEGATIVE ELECTRONIC AFFINITY

Publications (3)

Publication Number Publication Date
JP2020533760A JP2020533760A (ja) 2020-11-19
JP2020533760A5 true JP2020533760A5 (enExample) 2021-10-21
JP7227230B2 JP7227230B2 (ja) 2023-02-21

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ID=65632374

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JP2020514947A Active JP7227230B2 (ja) 2017-09-12 2018-09-12 熱アシスト負電子親和性フォトカソード

Country Status (7)

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US (1) US10692683B2 (enExample)
EP (1) EP3682461B1 (enExample)
JP (1) JP7227230B2 (enExample)
AU (1) AU2018332878B2 (enExample)
CA (1) CA3075509C (enExample)
IL (1) IL273140B2 (enExample)
WO (1) WO2019055554A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11621289B2 (en) 2020-05-22 2023-04-04 Eotech, Llc Compact proximity focused image sensor

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507386A1 (fr) * 1981-06-03 1982-12-10 Labo Electronique Physique Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage
FR2592217B1 (fr) * 1985-12-20 1988-02-05 Thomson Csf Photocathode a amplification interne
JPH0512989A (ja) * 1991-07-01 1993-01-22 Nec Corp 半導体光電面およびその製造方法
US5268612A (en) * 1991-07-01 1993-12-07 Intevac, Inc. Feedback limited microchannel plate
US5268570A (en) 1991-12-20 1993-12-07 Litton Systems, Inc. Transmission mode InGaAs photocathode for night vision system
US5349177A (en) * 1993-02-22 1994-09-20 Itt Corporation Image intensifier tube having a solid state electron amplifier
US5597112A (en) 1994-10-13 1997-01-28 Knapp; Frederick W. Collapsible octahedral container
US6005257A (en) * 1995-09-13 1999-12-21 Litton Systems, Inc. Transmission mode photocathode with multilayer active layer for night vision and method
US5712490A (en) * 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission
JP2000090817A (ja) * 1998-09-11 2000-03-31 Daido Steel Co Ltd 偏極電子線発生素子
US6350999B1 (en) * 1999-02-05 2002-02-26 Matsushita Electric Industrial Co., Ltd. Electron-emitting device
US6957992B2 (en) * 1999-03-18 2005-10-25 Litton Systems, Inc. Image intensification tube
US6483231B1 (en) * 1999-05-07 2002-11-19 Litton Systems, Inc. Night vision device and method
JPWO2002078144A1 (ja) * 2001-03-27 2004-07-15 シャープ株式会社 半導体装置及び結晶成長方法
US6633125B2 (en) * 2001-05-31 2003-10-14 Itt Manufacturing Enterprises, Inc. Short wavelength infrared cathode
JP2004179318A (ja) * 2002-11-26 2004-06-24 Nec Compound Semiconductor Devices Ltd 接合型電界効果トランジスタ及びその製造方法
US6998635B2 (en) * 2003-05-22 2006-02-14 Itt Manufacturing Enterprises Inc. Tuned bandwidth photocathode for transmission negative electron affinity devices
US7838869B2 (en) * 2005-10-21 2010-11-23 Georgia State University Research Foundation, Inc. Dual band photodetector
JP5267931B2 (ja) 2008-10-29 2013-08-21 独立行政法人理化学研究所 光陰極半導体素子
US9601299B2 (en) * 2012-08-03 2017-03-21 Kla-Tencor Corporation Photocathode including silicon substrate with boron layer

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