IL273140B2 - Thermally assisted photocathode with negative electron affinity - Google Patents
Thermally assisted photocathode with negative electron affinityInfo
- Publication number
- IL273140B2 IL273140B2 IL273140A IL27314020A IL273140B2 IL 273140 B2 IL273140 B2 IL 273140B2 IL 273140 A IL273140 A IL 273140A IL 27314020 A IL27314020 A IL 27314020A IL 273140 B2 IL273140 B2 IL 273140B2
- Authority
- IL
- Israel
- Prior art keywords
- photocathode
- layer
- barrier
- accordance
- thermionic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
- H01J31/48—Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/501—Imaging and conversion tubes including multiplication stage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/702,647 US10692683B2 (en) | 2017-09-12 | 2017-09-12 | Thermally assisted negative electron affinity photocathode |
| PCT/US2018/050735 WO2019055554A1 (en) | 2017-09-12 | 2018-09-12 | PHOTOCATHODE WITH THERMALLY ASSISTED NEGATIVE ELECTRONIC AFFINITY |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| IL273140A IL273140A (en) | 2020-04-30 |
| IL273140B1 IL273140B1 (en) | 2024-06-01 |
| IL273140B2 true IL273140B2 (en) | 2024-10-01 |
Family
ID=65632374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL273140A IL273140B2 (en) | 2017-09-12 | 2018-09-12 | Thermally assisted photocathode with negative electron affinity |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10692683B2 (enExample) |
| EP (1) | EP3682461B1 (enExample) |
| JP (1) | JP7227230B2 (enExample) |
| AU (1) | AU2018332878B2 (enExample) |
| CA (1) | CA3075509C (enExample) |
| IL (1) | IL273140B2 (enExample) |
| WO (1) | WO2019055554A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11621289B2 (en) | 2020-05-22 | 2023-04-04 | Eotech, Llc | Compact proximity focused image sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4829355A (en) * | 1985-12-20 | 1989-05-09 | Thomson-Csf | Photocathode having internal amplification |
| US5712490A (en) * | 1996-11-21 | 1998-01-27 | Itt Industries, Inc. | Ramp cathode structures for vacuum emission |
| US6483231B1 (en) * | 1999-05-07 | 2002-11-19 | Litton Systems, Inc. | Night vision device and method |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2507386A1 (fr) * | 1981-06-03 | 1982-12-10 | Labo Electronique Physique | Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage |
| JPH0512989A (ja) * | 1991-07-01 | 1993-01-22 | Nec Corp | 半導体光電面およびその製造方法 |
| US5268612A (en) * | 1991-07-01 | 1993-12-07 | Intevac, Inc. | Feedback limited microchannel plate |
| US5268570A (en) | 1991-12-20 | 1993-12-07 | Litton Systems, Inc. | Transmission mode InGaAs photocathode for night vision system |
| US5349177A (en) * | 1993-02-22 | 1994-09-20 | Itt Corporation | Image intensifier tube having a solid state electron amplifier |
| US5597112A (en) | 1994-10-13 | 1997-01-28 | Knapp; Frederick W. | Collapsible octahedral container |
| US6005257A (en) * | 1995-09-13 | 1999-12-21 | Litton Systems, Inc. | Transmission mode photocathode with multilayer active layer for night vision and method |
| JP2000090817A (ja) * | 1998-09-11 | 2000-03-31 | Daido Steel Co Ltd | 偏極電子線発生素子 |
| US6350999B1 (en) * | 1999-02-05 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Electron-emitting device |
| US6957992B2 (en) * | 1999-03-18 | 2005-10-25 | Litton Systems, Inc. | Image intensification tube |
| JPWO2002078144A1 (ja) * | 2001-03-27 | 2004-07-15 | シャープ株式会社 | 半導体装置及び結晶成長方法 |
| US6633125B2 (en) * | 2001-05-31 | 2003-10-14 | Itt Manufacturing Enterprises, Inc. | Short wavelength infrared cathode |
| JP2004179318A (ja) * | 2002-11-26 | 2004-06-24 | Nec Compound Semiconductor Devices Ltd | 接合型電界効果トランジスタ及びその製造方法 |
| US6998635B2 (en) * | 2003-05-22 | 2006-02-14 | Itt Manufacturing Enterprises Inc. | Tuned bandwidth photocathode for transmission negative electron affinity devices |
| US7838869B2 (en) * | 2005-10-21 | 2010-11-23 | Georgia State University Research Foundation, Inc. | Dual band photodetector |
| JP5267931B2 (ja) | 2008-10-29 | 2013-08-21 | 独立行政法人理化学研究所 | 光陰極半導体素子 |
| US9601299B2 (en) * | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
-
2017
- 2017-09-12 US US15/702,647 patent/US10692683B2/en active Active
-
2018
- 2018-09-12 EP EP18856829.9A patent/EP3682461B1/en active Active
- 2018-09-12 JP JP2020514947A patent/JP7227230B2/ja active Active
- 2018-09-12 AU AU2018332878A patent/AU2018332878B2/en active Active
- 2018-09-12 IL IL273140A patent/IL273140B2/en unknown
- 2018-09-12 CA CA3075509A patent/CA3075509C/en active Active
- 2018-09-12 WO PCT/US2018/050735 patent/WO2019055554A1/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4829355A (en) * | 1985-12-20 | 1989-05-09 | Thomson-Csf | Photocathode having internal amplification |
| US5712490A (en) * | 1996-11-21 | 1998-01-27 | Itt Industries, Inc. | Ramp cathode structures for vacuum emission |
| US6483231B1 (en) * | 1999-05-07 | 2002-11-19 | Litton Systems, Inc. | Night vision device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019055554A1 (en) | 2019-03-21 |
| CA3075509C (en) | 2024-05-14 |
| EP3682461B1 (en) | 2024-11-06 |
| JP2020533760A (ja) | 2020-11-19 |
| US10692683B2 (en) | 2020-06-23 |
| IL273140A (en) | 2020-04-30 |
| EP3682461A1 (en) | 2020-07-22 |
| IL273140B1 (en) | 2024-06-01 |
| AU2018332878A1 (en) | 2020-04-09 |
| JP7227230B2 (ja) | 2023-02-21 |
| US20190080875A1 (en) | 2019-03-14 |
| EP3682461A4 (en) | 2021-11-10 |
| AU2018332878B2 (en) | 2023-03-30 |
| CA3075509A1 (en) | 2019-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Martinelli et al. | The application of semiconductors with negative electron affinity surfaces to electron emission devices | |
| US8558234B2 (en) | Low voltage low light imager and photodetector | |
| EP0642147B1 (en) | Photoemitter, electron tube, and photodetector | |
| US7030406B2 (en) | Semiconductor photocathode and photoelectric tube using the same | |
| JP3524249B2 (ja) | 電子管 | |
| US6836059B2 (en) | Image intensifier and electron multiplier therefor | |
| Escher et al. | Field-assisted semiconductor photoemitters for the 1—2-µm range | |
| CA3075509C (en) | Thermally assisted negative electron affinity photocathode | |
| JPH09213206A (ja) | 透過型光電面、その製造方法、及びそれを用いた光電変換管 | |
| Seib et al. | Photodetectors for the 0.1 to 1.0 μm Spectral Region | |
| US5712490A (en) | Ramp cathode structures for vacuum emission | |
| JP3565526B2 (ja) | 光電子放出面及びそれを用いた電子管 | |
| US6563264B2 (en) | Photocathode and electron tube | |
| JPH11135003A (ja) | 光電面及びそれを用いた電子管 | |
| JP3615856B2 (ja) | 光電面及びそれを用いた光電変換管 | |
| US20090273281A1 (en) | Photocathode and electron tube having the same | |
| EP0996961A1 (en) | Night vision device having an image intensifier tube | |
| JPH1196897A (ja) | 光電陰極及びそれを用いた電子管 | |
| EP4376045A1 (en) | Photocathode including nanostructures for extended wavelengths | |
| EP0345086A1 (en) | Single crystal output screen | |
| CN118899210A (zh) | 具有光电子雪崩放大效应的光电阴极结构、微光像增强器、ebaps结构 | |
| Nikzad et al. | Low Voltage Low Light Imager and Photodetector |