CA3075509C - Thermally assisted negative electron affinity photocathode - Google Patents
Thermally assisted negative electron affinity photocathode Download PDFInfo
- Publication number
- CA3075509C CA3075509C CA3075509A CA3075509A CA3075509C CA 3075509 C CA3075509 C CA 3075509C CA 3075509 A CA3075509 A CA 3075509A CA 3075509 A CA3075509 A CA 3075509A CA 3075509 C CA3075509 C CA 3075509C
- Authority
- CA
- Canada
- Prior art keywords
- photocathode
- layer
- barrier
- accordance
- thermionic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 86
- 230000003287 optical effect Effects 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 29
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 28
- 239000006096 absorbing agent Substances 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 13
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 230000005641 tunneling Effects 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000010348 incorporation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 152
- 239000000463 material Substances 0.000 description 20
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- 238000010521 absorption reaction Methods 0.000 description 5
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- 238000004519 manufacturing process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000004297 night vision Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 239000003574 free electron Substances 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
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- 239000012780 transparent material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
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- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
- H01J31/48—Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2231/00—Cathode ray tubes or electron beam tubes
- H01J2231/50—Imaging and conversion tubes
- H01J2231/501—Imaging and conversion tubes including multiplication stage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/702,647 | 2017-09-12 | ||
| US15/702,647 US10692683B2 (en) | 2017-09-12 | 2017-09-12 | Thermally assisted negative electron affinity photocathode |
| PCT/US2018/050735 WO2019055554A1 (en) | 2017-09-12 | 2018-09-12 | PHOTOCATHODE WITH THERMALLY ASSISTED NEGATIVE ELECTRONIC AFFINITY |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA3075509A1 CA3075509A1 (en) | 2019-03-21 |
| CA3075509C true CA3075509C (en) | 2024-05-14 |
Family
ID=65632374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA3075509A Active CA3075509C (en) | 2017-09-12 | 2018-09-12 | Thermally assisted negative electron affinity photocathode |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10692683B2 (enExample) |
| EP (1) | EP3682461B1 (enExample) |
| JP (1) | JP7227230B2 (enExample) |
| AU (1) | AU2018332878B2 (enExample) |
| CA (1) | CA3075509C (enExample) |
| IL (1) | IL273140B2 (enExample) |
| WO (1) | WO2019055554A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11621289B2 (en) | 2020-05-22 | 2023-04-04 | Eotech, Llc | Compact proximity focused image sensor |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2507386A1 (fr) * | 1981-06-03 | 1982-12-10 | Labo Electronique Physique | Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage |
| FR2592217B1 (fr) * | 1985-12-20 | 1988-02-05 | Thomson Csf | Photocathode a amplification interne |
| JPH0512989A (ja) * | 1991-07-01 | 1993-01-22 | Nec Corp | 半導体光電面およびその製造方法 |
| US5268612A (en) * | 1991-07-01 | 1993-12-07 | Intevac, Inc. | Feedback limited microchannel plate |
| US5268570A (en) | 1991-12-20 | 1993-12-07 | Litton Systems, Inc. | Transmission mode InGaAs photocathode for night vision system |
| US5349177A (en) * | 1993-02-22 | 1994-09-20 | Itt Corporation | Image intensifier tube having a solid state electron amplifier |
| US5597112A (en) | 1994-10-13 | 1997-01-28 | Knapp; Frederick W. | Collapsible octahedral container |
| US6005257A (en) * | 1995-09-13 | 1999-12-21 | Litton Systems, Inc. | Transmission mode photocathode with multilayer active layer for night vision and method |
| US5712490A (en) * | 1996-11-21 | 1998-01-27 | Itt Industries, Inc. | Ramp cathode structures for vacuum emission |
| JP2000090817A (ja) * | 1998-09-11 | 2000-03-31 | Daido Steel Co Ltd | 偏極電子線発生素子 |
| US6350999B1 (en) * | 1999-02-05 | 2002-02-26 | Matsushita Electric Industrial Co., Ltd. | Electron-emitting device |
| US6957992B2 (en) * | 1999-03-18 | 2005-10-25 | Litton Systems, Inc. | Image intensification tube |
| US6483231B1 (en) * | 1999-05-07 | 2002-11-19 | Litton Systems, Inc. | Night vision device and method |
| JPWO2002078144A1 (ja) * | 2001-03-27 | 2004-07-15 | シャープ株式会社 | 半導体装置及び結晶成長方法 |
| US6633125B2 (en) * | 2001-05-31 | 2003-10-14 | Itt Manufacturing Enterprises, Inc. | Short wavelength infrared cathode |
| JP2004179318A (ja) * | 2002-11-26 | 2004-06-24 | Nec Compound Semiconductor Devices Ltd | 接合型電界効果トランジスタ及びその製造方法 |
| US6998635B2 (en) * | 2003-05-22 | 2006-02-14 | Itt Manufacturing Enterprises Inc. | Tuned bandwidth photocathode for transmission negative electron affinity devices |
| US7838869B2 (en) * | 2005-10-21 | 2010-11-23 | Georgia State University Research Foundation, Inc. | Dual band photodetector |
| JP5267931B2 (ja) | 2008-10-29 | 2013-08-21 | 独立行政法人理化学研究所 | 光陰極半導体素子 |
| US9601299B2 (en) * | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
-
2017
- 2017-09-12 US US15/702,647 patent/US10692683B2/en active Active
-
2018
- 2018-09-12 EP EP18856829.9A patent/EP3682461B1/en active Active
- 2018-09-12 JP JP2020514947A patent/JP7227230B2/ja active Active
- 2018-09-12 AU AU2018332878A patent/AU2018332878B2/en active Active
- 2018-09-12 IL IL273140A patent/IL273140B2/en unknown
- 2018-09-12 CA CA3075509A patent/CA3075509C/en active Active
- 2018-09-12 WO PCT/US2018/050735 patent/WO2019055554A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019055554A1 (en) | 2019-03-21 |
| EP3682461B1 (en) | 2024-11-06 |
| JP2020533760A (ja) | 2020-11-19 |
| US10692683B2 (en) | 2020-06-23 |
| IL273140A (en) | 2020-04-30 |
| IL273140B2 (en) | 2024-10-01 |
| EP3682461A1 (en) | 2020-07-22 |
| IL273140B1 (en) | 2024-06-01 |
| AU2018332878A1 (en) | 2020-04-09 |
| JP7227230B2 (ja) | 2023-02-21 |
| US20190080875A1 (en) | 2019-03-14 |
| EP3682461A4 (en) | 2021-11-10 |
| AU2018332878B2 (en) | 2023-03-30 |
| CA3075509A1 (en) | 2019-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20230911 |
|
| EEER | Examination request |
Effective date: 20230911 |
|
| EEER | Examination request |
Effective date: 20230911 |
|
| EEER | Examination request |
Effective date: 20230911 |
|
| EEER | Examination request |
Effective date: 20230911 |
|
| EEER | Examination request |
Effective date: 20230911 |