JP7186732B2 - 表示装置 - Google Patents

表示装置 Download PDF

Info

Publication number
JP7186732B2
JP7186732B2 JP2019571122A JP2019571122A JP7186732B2 JP 7186732 B2 JP7186732 B2 JP 7186732B2 JP 2019571122 A JP2019571122 A JP 2019571122A JP 2019571122 A JP2019571122 A JP 2019571122A JP 7186732 B2 JP7186732 B2 JP 7186732B2
Authority
JP
Japan
Prior art keywords
insulator
oxide
conductor
region
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019571122A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2019155318A5 (https=
JPWO2019155318A1 (ja
Inventor
舜平 山崎
紘慈 楠
欣聡 及川
健輔 吉住
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2019155318A1 publication Critical patent/JPWO2019155318A1/ja
Publication of JPWO2019155318A5 publication Critical patent/JPWO2019155318A5/ja
Priority to JP2022190081A priority Critical patent/JP7514903B2/ja
Application granted granted Critical
Publication of JP7186732B2 publication Critical patent/JP7186732B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G09F9/335—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes being organic light emitting diodes [OLED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Led Device Packages (AREA)
  • Vehicle Body Suspensions (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
JP2019571122A 2018-02-08 2019-01-28 表示装置 Active JP7186732B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022190081A JP7514903B2 (ja) 2018-02-08 2022-11-29 表示装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018021216 2018-02-08
JP2018021216 2018-02-08
JP2018025658 2018-02-16
JP2018025658 2018-02-16
PCT/IB2019/050660 WO2019155318A1 (ja) 2018-02-08 2019-01-28 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022190081A Division JP7514903B2 (ja) 2018-02-08 2022-11-29 表示装置

Publications (3)

Publication Number Publication Date
JPWO2019155318A1 JPWO2019155318A1 (ja) 2021-02-25
JPWO2019155318A5 JPWO2019155318A5 (https=) 2022-01-19
JP7186732B2 true JP7186732B2 (ja) 2022-12-09

Family

ID=67548979

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019571122A Active JP7186732B2 (ja) 2018-02-08 2019-01-28 表示装置
JP2022190081A Active JP7514903B2 (ja) 2018-02-08 2022-11-29 表示装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022190081A Active JP7514903B2 (ja) 2018-02-08 2022-11-29 表示装置

Country Status (5)

Country Link
US (1) US11417687B2 (https=)
JP (2) JP7186732B2 (https=)
KR (2) KR102680921B1 (https=)
TW (2) TWI856803B (https=)
WO (1) WO2019155318A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210130724A (ko) 2019-02-22 2021-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 안경형 전자 기기
CN113939223A (zh) 2019-06-07 2022-01-14 株式会社半导体能源研究所 复合装置
JP7641724B2 (ja) * 2019-11-12 2025-03-07 株式会社半導体エネルギー研究所 機能パネル、表示装置、入出力装置、情報処理装置
CN114641815A (zh) * 2019-11-12 2022-06-17 株式会社半导体能源研究所 显示单元、显示模块、电子设备及显示单元的制造方法
US12471440B2 (en) * 2020-05-07 2025-11-11 Sony Semiconductor Solutions Corporation Display device, method for fabricating display device, and electronic instrument
JP6967627B2 (ja) * 2020-05-08 2021-11-17 アオイ電子株式会社 半導体装置
KR20230121844A (ko) * 2020-12-30 2023-08-21 에이에스엠엘 네델란즈 비.브이. 검사 시스템을 세정하기 위한 장치 및 방법
CN215578574U (zh) 2021-01-26 2022-01-18 京东方科技集团股份有限公司 显示基板以及显示装置
EP4206882A4 (en) 2021-05-19 2024-01-03 BOE Technology Group Co., Ltd. Touch structure and display panel
US12581747B2 (en) 2022-06-20 2026-03-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR20250042986A (ko) * 2023-09-21 2025-03-28 엘지디스플레이 주식회사 표시 장치

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013145878A (ja) 2011-12-14 2013-07-25 Semiconductor Energy Lab Co Ltd 半導体装置、及び当該半導体装置を用いた表示装置
WO2014112279A1 (ja) 2013-01-16 2014-07-24 ソニー株式会社 固体撮像素子および電子機器
JP2016157937A (ja) 2015-02-24 2016-09-01 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2016167584A (ja) 2015-03-03 2016-09-15 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2017009738A1 (ja) 2015-07-14 2017-01-19 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2017103723A1 (ja) 2015-12-15 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器およびトランジスタの作製方法
JP2017147445A (ja) 2016-02-17 2017-08-24 株式会社半導体エネルギー研究所 半導体装置、電子機器
WO2017144994A1 (ja) 2016-02-22 2017-08-31 株式会社半導体エネルギー研究所 トランジスタおよびその作製方法、半導体ウエハならびに電子機器

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3886062T2 (de) * 1987-01-30 1994-05-19 Texas Instruments Inc Verfahren zum Herstellen integrierter Strukturen aus bipolaren und CMOS-Transistoren.
JP3931138B2 (ja) * 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
KR102071545B1 (ko) 2012-05-31 2020-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9449853B2 (en) * 2013-09-04 2016-09-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising electron trap layer
JP6402017B2 (ja) 2013-12-26 2018-10-10 株式会社半導体エネルギー研究所 半導体装置
US9543370B2 (en) 2014-09-24 2017-01-10 Apple Inc. Silicon and semiconducting oxide thin-film transistor displays
JP6823927B2 (ja) 2015-01-21 2021-02-03 株式会社半導体エネルギー研究所 表示システム
TWI693719B (zh) 2015-05-11 2020-05-11 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
KR102408898B1 (ko) 2015-06-19 2022-06-16 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
JP6584196B2 (ja) 2015-07-31 2019-10-02 株式会社半導体エネルギー研究所 半導体装置
US10553690B2 (en) * 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN106504991B (zh) * 2015-09-03 2021-08-27 应用材料公司 用于制造半导体应用的水平全环栅极器件的纳米线的方法
JP6850096B2 (ja) 2015-09-24 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法及び電子機器の作製方法
JP6827270B2 (ja) 2016-03-28 2021-02-10 株式会社ジャパンディスプレイ 半導体装置の作製方法
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
US10528079B2 (en) 2016-08-26 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Data processing device, display method, input/output method, server system, and computer program
JP2018049267A (ja) 2016-09-16 2018-03-29 株式会社半導体エネルギー研究所 表示システム、電子機器および表示方法
KR20190076045A (ko) 2016-11-10 2019-07-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치의 구동 방법
US10330993B2 (en) 2016-12-23 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Display device
WO2018197987A1 (en) 2017-04-28 2018-11-01 Semiconductor Energy Laboratory Co., Ltd. Imaging display device and electronic device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013145878A (ja) 2011-12-14 2013-07-25 Semiconductor Energy Lab Co Ltd 半導体装置、及び当該半導体装置を用いた表示装置
WO2014112279A1 (ja) 2013-01-16 2014-07-24 ソニー株式会社 固体撮像素子および電子機器
JP2016157937A (ja) 2015-02-24 2016-09-01 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2016167584A (ja) 2015-03-03 2016-09-15 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2017009738A1 (ja) 2015-07-14 2017-01-19 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2017103723A1 (ja) 2015-12-15 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器およびトランジスタの作製方法
JP2017147445A (ja) 2016-02-17 2017-08-24 株式会社半導体エネルギー研究所 半導体装置、電子機器
WO2017144994A1 (ja) 2016-02-22 2017-08-31 株式会社半導体エネルギー研究所 トランジスタおよびその作製方法、半導体ウエハならびに電子機器

Also Published As

Publication number Publication date
JP2023024481A (ja) 2023-02-16
KR20230133949A (ko) 2023-09-19
JPWO2019155318A1 (ja) 2021-02-25
TWI856803B (zh) 2024-09-21
TWI814776B (zh) 2023-09-11
WO2019155318A1 (ja) 2019-08-15
TW201937254A (zh) 2019-09-16
KR20200115539A (ko) 2020-10-07
US11417687B2 (en) 2022-08-16
US20210111196A1 (en) 2021-04-15
KR102680921B1 (ko) 2024-07-02
KR102579601B1 (ko) 2023-09-15
TW202409679A (zh) 2024-03-01
JP7514903B2 (ja) 2024-07-11

Similar Documents

Publication Publication Date Title
JP7186732B2 (ja) 表示装置
US20220320184A1 (en) Display apparatus, display module, electronic device, and method for manufacturing display apparatus
TW202343590A (zh) 半導體裝置
TW202315137A (zh) 半導體裝置及包括半導體裝置的顯示裝置
JP7646556B2 (ja) 表示装置、および電子機器
WO2022162501A1 (ja) 表示装置
US12009432B2 (en) Transistor and display device
TW202329333A (zh) 半導體裝置、半導體裝置的製造方法
US20240224698A1 (en) Display apparatus
CN116710987A (zh) 显示装置、显示装置的制造方法及电子设备
KR20230156066A (ko) 표시 장치
KR20230174233A (ko) 표시 장치
CN116745836A (zh) 显示装置及电子设备
CN116547737A (zh) 显示系统及电子设备
CN120642596A (zh) 半导体装置、显示装置、显示模块及电子设备以及半导体装置的制造方法
KR20260005279A (ko) 반도체 장치 및 반도체 장치의 제작 방법
CN120266597A (zh) 半导体装置、显示装置、显示模块及电子设备
TW202240562A (zh) 顯示系統及電子裝置
TW202502178A (zh) 半導體裝置及顯示裝置
TW202243241A (zh) 顯示裝置及顯示裝置的製造方法
CN117280869A (zh) 显示装置、显示模块及电子设备
CN116686034A (zh) 显示装置
CN119153515A (zh) 半导体装置及半导体装置的制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220111

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220111

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221108

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221129

R150 Certificate of patent or registration of utility model

Ref document number: 7186732

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250