JP7155255B2 - デッドタイム制御のためのタイミングコントローラ - Google Patents

デッドタイム制御のためのタイミングコントローラ Download PDF

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JP7155255B2
JP7155255B2 JP2020519020A JP2020519020A JP7155255B2 JP 7155255 B2 JP7155255 B2 JP 7155255B2 JP 2020519020 A JP2020519020 A JP 2020519020A JP 2020519020 A JP2020519020 A JP 2020519020A JP 7155255 B2 JP7155255 B2 JP 7155255B2
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voltage
switching
low
transistor
control circuit
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JP2020524479A5 (enExample
JP2020524479A (ja
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アベシンハ，ブッディカ
グリーン，マーリン
チュンシエン ウー，ゲイリー
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PSemi Corp
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PSemi Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/003—Changing the DC level
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
    • H03K5/1534—Transition or edge detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K2005/00293—Output pulse is a delayed pulse issued after a rising or a falling edge, the length of the output pulse not being in relation with the length of the input triggering pulse
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
JP2020519020A 2017-06-19 2018-06-18 デッドタイム制御のためのタイミングコントローラ Active JP7155255B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/627,196 2017-06-19
US15/627,196 US10116297B1 (en) 2017-06-19 2017-06-19 DC-coupled high-voltage level shifter
PCT/US2018/038123 WO2018236771A1 (en) 2017-06-19 2018-06-18 Timing controller for dead-time control

Publications (3)

Publication Number Publication Date
JP2020524479A JP2020524479A (ja) 2020-08-13
JP2020524479A5 JP2020524479A5 (enExample) 2021-07-29
JP7155255B2 true JP7155255B2 (ja) 2022-10-18

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US (3) US10116297B1 (enExample)
JP (1) JP7155255B2 (enExample)
KR (1) KR102544761B1 (enExample)
CN (1) CN110771043B (enExample)
DE (1) DE112018003130T5 (enExample)
WO (1) WO2018236771A1 (enExample)

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US10348293B2 (en) * 2017-06-19 2019-07-09 Psemi Corporation Timing controller for dead-time control
US11916026B2 (en) * 2018-08-16 2024-02-27 Qualcomm Incorporated High voltage supply clamp
CN109495091A (zh) * 2018-10-31 2019-03-19 北京无线电测量研究所 一种脉冲电压调制电路
US10833672B2 (en) * 2018-11-15 2020-11-10 Rohm Co., Ltd. Driving circuit for high-side transistor, switching circuit, and controller for DC/DC converter
US10749509B1 (en) 2019-05-13 2020-08-18 Infineon Technologies Austria Ag Capacitive-coupled level shifter and related system
JP7282599B2 (ja) * 2019-05-30 2023-05-29 ローム株式会社 ハイサイドトランジスタの駆動回路、スイッチング回路、ｄｃ／ｄｃコンバータのコントローラ
JP7251412B2 (ja) * 2019-08-30 2023-04-04 株式会社デンソー 通信装置
CN110557012B (zh) * 2019-09-11 2020-07-17 上海南芯半导体科技有限公司 用于2：1正向电荷泵的驱动电路及其实现方法
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CN112953487B (zh) * 2021-02-20 2025-06-17 上海数明半导体有限公司 能够形成死区时间的驱动器控制电路和驱动器
TWI745245B (zh) * 2021-02-26 2021-11-01 新唐科技股份有限公司 電壓轉換器與使用其的電路系統
JP2022144130A (ja) * 2021-03-18 2022-10-03 ローム株式会社 ハイサイドトランジスタの駆動回路、スイッチング回路、ｄｃ／ｄｃコンバータのコントローラ
CN112968611B (zh) * 2021-03-22 2022-08-23 矽力杰半导体技术(杭州)有限公司 控制电路以及应用其的开关电源
CN113241933B (zh) * 2021-05-24 2022-08-02 电子科技大学 一种适用于GaN半桥栅驱动系统的死区时间控制电路
CN115549646A (zh) * 2021-06-30 2022-12-30 深圳市中兴微电子技术有限公司 时钟接收电路和电子设备
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CN114220405B (zh) * 2021-12-15 2023-01-20 惠州视维新技术有限公司 电平转换电路、电源集成电路、显示装置和电平转换方法
JP2023116227A (ja) * 2022-02-09 2023-08-22 セイコーＮｐｃ株式会社 出力回路
CN114640340B (zh) * 2022-03-25 2025-12-16 星宸科技股份有限公司 具有低传输延迟的电平转换器
CN116931632A (zh) * 2022-04-12 2023-10-24 圣邦微电子（北京）股份有限公司 一种高压输入级电路及高压输入方法
CN115021752A (zh) * 2022-06-23 2022-09-06 思瑞浦微电子科技（苏州）股份有限公司 具有隔离电路的数模转换电路和控制数模转换电路的方法
CN116483154B (zh) * 2023-06-25 2023-09-12 上海海栎创科技股份有限公司 一种低延迟基准输出电路与输出方法
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WO2025072063A1 (en) * 2023-09-26 2025-04-03 Lam Research Corporation Systems and methods for regulating power output from a matchless plasma source
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CN119892029A (zh) * 2024-12-27 2025-04-25 广东致能半导体有限公司 开关速度可调的半导体器件

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US5969542A (en) 1997-05-21 1999-10-19 Advanced Micro Devices, Inc. High speed gate oxide protected level shifter
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JP2008263599A (ja) 2007-03-20 2008-10-30 Denso Corp レベルシフト回路
US20110304389A1 (en) 2010-05-03 2011-12-15 Semikron Elektronik Gmbh & Co. Kg Drive Circuit With a Transmission Circuit for Capacitively Transmitting a Signal and Associated Method
JP2014096789A (ja) 2012-11-07 2014-05-22 Semikron Elektronik Gmbh & Co Kg 信号伝送回路を備える駆動回路及び動作方法

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US20200162069A1 (en) 2020-05-21
WO2018236771A1 (en) 2018-12-27
KR20200018806A (ko) 2020-02-20
US11658654B2 (en) 2023-05-23
CN110771043B (zh) 2024-03-15
US10979042B2 (en) 2021-04-13
US20210328584A1 (en) 2021-10-21
KR102544761B1 (ko) 2023-06-21
US10116297B1 (en) 2018-10-30
JP2020524479A (ja) 2020-08-13
CN110771043A (zh) 2020-02-07

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