JP2020524479A5 - - Google Patents
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- JP2020524479A5 JP2020524479A5 JP2020519020A JP2020519020A JP2020524479A5 JP 2020524479 A5 JP2020524479 A5 JP 2020524479A5 JP 2020519020 A JP2020519020 A JP 2020519020A JP 2020519020 A JP2020519020 A JP 2020519020A JP 2020524479 A5 JP2020524479 A5 JP 2020524479A5
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- input
- switching
- control circuit
- timing control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000003990 capacitor Substances 0.000 claims 21
- 230000008878 coupling Effects 0.000 claims 21
- 238000010168 coupling process Methods 0.000 claims 21
- 238000005859 coupling reaction Methods 0.000 claims 21
- 230000000295 complement effect Effects 0.000 claims 14
- 230000000630 rising effect Effects 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 229910052594 sapphire Inorganic materials 0.000 claims 5
- 239000010980 sapphire Substances 0.000 claims 5
- 235000012239 silicon dioxide Nutrition 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- 230000005540 biological transmission Effects 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 230000001172 regenerating effect Effects 0.000 claims 2
- 230000003321 amplification Effects 0.000 claims 1
- 230000001934 delay Effects 0.000 claims 1
- 230000003111 delayed effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/627,196 | 2017-06-19 | ||
| US15/627,196 US10116297B1 (en) | 2017-06-19 | 2017-06-19 | DC-coupled high-voltage level shifter |
| PCT/US2018/038123 WO2018236771A1 (en) | 2017-06-19 | 2018-06-18 | Timing controller for dead-time control |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020524479A JP2020524479A (ja) | 2020-08-13 |
| JP2020524479A5 true JP2020524479A5 (enExample) | 2021-07-29 |
| JP7155255B2 JP7155255B2 (ja) | 2022-10-18 |
Family
ID=62842325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020519020A Active JP7155255B2 (ja) | 2017-06-19 | 2018-06-18 | デッドタイム制御のためのタイミングコントローラ |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US10116297B1 (enExample) |
| JP (1) | JP7155255B2 (enExample) |
| KR (1) | KR102544761B1 (enExample) |
| CN (1) | CN110771043B (enExample) |
| DE (1) | DE112018003130T5 (enExample) |
| WO (1) | WO2018236771A1 (enExample) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10116297B1 (en) * | 2017-06-19 | 2018-10-30 | Psemi Corporation | DC-coupled high-voltage level shifter |
| US10348293B2 (en) * | 2017-06-19 | 2019-07-09 | Psemi Corporation | Timing controller for dead-time control |
| US11916026B2 (en) * | 2018-08-16 | 2024-02-27 | Qualcomm Incorporated | High voltage supply clamp |
| CN109495091A (zh) * | 2018-10-31 | 2019-03-19 | 北京无线电测量研究所 | 一种脉冲电压调制电路 |
| US10833672B2 (en) * | 2018-11-15 | 2020-11-10 | Rohm Co., Ltd. | Driving circuit for high-side transistor, switching circuit, and controller for DC/DC converter |
| US10749509B1 (en) * | 2019-05-13 | 2020-08-18 | Infineon Technologies Austria Ag | Capacitive-coupled level shifter and related system |
| JP7282599B2 (ja) * | 2019-05-30 | 2023-05-29 | ローム株式会社 | ハイサイドトランジスタの駆動回路、スイッチング回路、ｄｃ／ｄｃコンバータのコントローラ |
| JP7251412B2 (ja) * | 2019-08-30 | 2023-04-04 | 株式会社デンソー | 通信装置 |
| CN110557012B (zh) * | 2019-09-11 | 2020-07-17 | 上海南芯半导体科技有限公司 | 用于2：1正向电荷泵的驱动电路及其实现方法 |
| TWI715224B (zh) * | 2019-09-30 | 2021-01-01 | 瑞昱半導體股份有限公司 | 具有耐壓機制的輸出電路 |
| US10944330B1 (en) * | 2019-12-19 | 2021-03-09 | Cypress Semiconductor Corporation | Self-biased gate driver architecture |
| KR102840030B1 (ko) * | 2020-02-06 | 2025-07-30 | 삼성전자주식회사 | 레벨 시프터를 포함하는 전자 장치 |
| CN111404526B (zh) * | 2020-03-19 | 2021-12-03 | 华中科技大学 | 一种可编程高精度动态驱动GaN的电路及其应用 |
| US20230178139A1 (en) * | 2020-05-29 | 2023-06-08 | Micron Technology, Inc. | Timing circuit having tuned temperature dependency |
| CN111510127B (zh) * | 2020-06-02 | 2025-05-13 | 思瑞浦微电子科技（苏州）股份有限公司 | 输出缓冲器控制电路 |
| CN112117999B (zh) * | 2020-08-25 | 2024-07-26 | 广东美的白色家电技术创新中心有限公司 | 驱动电路及家用电器 |
| US11165426B1 (en) * | 2020-09-01 | 2021-11-02 | Nxp Usa, Inc. | Level shifter and a method of level shifting a signal |
| US11335396B1 (en) * | 2020-11-19 | 2022-05-17 | Micron Technology, Inc. | Timing signal delay for a memory device |
| CN114518567B (zh) * | 2020-11-20 | 2025-06-13 | 上海禾赛科技有限公司 | 状态切换电路、光电探测阵列及光学探测系统 |
| US12174773B2 (en) * | 2021-01-28 | 2024-12-24 | Realtek Semiconductor Corp. | Transmission control architecture between sensing device and host device |
| CN112953487B (zh) * | 2021-02-20 | 2025-06-17 | 上海数明半导体有限公司 | 能够形成死区时间的驱动器控制电路和驱动器 |
| TWI745245B (zh) * | 2021-02-26 | 2021-11-01 | 新唐科技股份有限公司 | 電壓轉換器與使用其的電路系統 |
| JP2022144130A (ja) * | 2021-03-18 | 2022-10-03 | ローム株式会社 | ハイサイドトランジスタの駆動回路、スイッチング回路、ｄｃ／ｄｃコンバータのコントローラ |
| CN112968611B (zh) * | 2021-03-22 | 2022-08-23 | 矽力杰半导体技术(杭州)有限公司 | 控制电路以及应用其的开关电源 |
| CN113241933B (zh) * | 2021-05-24 | 2022-08-02 | 电子科技大学 | 一种适用于GaN半桥栅驱动系统的死区时间控制电路 |
| CN115549646A (zh) * | 2021-06-30 | 2022-12-30 | 深圳市中兴微电子技术有限公司 | 时钟接收电路和电子设备 |
| CN115693829B (zh) * | 2021-07-30 | 2025-07-22 | 圆益Pne有限公司 | 控制电池充放电用变流器的控制器及充放电器 |
| US11799287B2 (en) | 2021-11-09 | 2023-10-24 | Qualcomm Incorporated | Area efficient level translating trigger circuit for electrostatic discharge events |
| CN114220405B (zh) * | 2021-12-15 | 2023-01-20 | 惠州视维新技术有限公司 | 电平转换电路、电源集成电路、显示装置和电平转换方法 |
| CN114640340B (zh) * | 2022-03-25 | 2025-12-16 | 星宸科技股份有限公司 | 具有低传输延迟的电平转换器 |
| CN116931632A (zh) * | 2022-04-12 | 2023-10-24 | 圣邦微电子（北京）股份有限公司 | 一种高压输入级电路及高压输入方法 |
| CN115021752A (zh) * | 2022-06-23 | 2022-09-06 | 思瑞浦微电子科技（苏州）股份有限公司 | 具有隔离电路的数模转换电路和控制数模转换电路的方法 |
| CN116483154B (zh) * | 2023-06-25 | 2023-09-12 | 上海海栎创科技股份有限公司 | 一种低延迟基准输出电路与输出方法 |
| CN116778646B (zh) * | 2023-08-24 | 2023-10-20 | 深圳和成东科技有限公司 | 一种智能收银机电路装置 |
| WO2025072063A1 (en) * | 2023-09-26 | 2025-04-03 | Lam Research Corporation | Systems and methods for regulating power output from a matchless plasma source |
| US12381558B2 (en) | 2023-11-09 | 2025-08-05 | Texas Instruments Incorporated | Level shifter for high voltage driver |
| CN118074702B (zh) * | 2024-04-24 | 2024-07-12 | 瓴科微(上海)集成电路有限责任公司 | 一种边沿检测加速电平转换电路 |
| CN119892029A (zh) * | 2024-12-27 | 2025-04-25 | 广东致能半导体有限公司 | 开关速度可调的半导体器件 |
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|---|---|---|---|---|
| US5416043A (en) | 1993-07-12 | 1995-05-16 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
| US5969542A (en) * | 1997-05-21 | 1999-10-19 | Advanced Micro Devices, Inc. | High speed gate oxide protected level shifter |
| JP4113447B2 (ja) * | 2002-12-02 | 2008-07-09 | テクトロニクス・インターナショナル・セールス・ゲーエムベーハー | ジッタ付加回路及び方法並びにパルス列生成回路及び方法 |
| US20040217794A1 (en) * | 2003-04-30 | 2004-11-04 | Mark Strysko | Propagation delay adjustment circuit |
| DE10357495B4 (de) * | 2003-12-09 | 2005-11-10 | Infineon Technologies Ag | Pegelumsetzer mit zwei Umsetzerstufen |
| TW200525869A (en) * | 2004-01-28 | 2005-08-01 | Renesas Tech Corp | Switching power supply and semiconductor IC |
| US7535262B2 (en) * | 2004-10-19 | 2009-05-19 | International Rectifier Corporation | High voltage level shifting by capacitive coupling |
| DE102006037336B3 (de) * | 2006-08-10 | 2008-02-07 | Semikron Elektronik Gmbh & Co. Kg | Levelshifter für eine Ansteuerschaltung für Leistungshalbleiterbauelemente |
| EP1919082B1 (en) * | 2006-10-30 | 2009-12-02 | Infineon Technologies Austria AG | Circuit arrangement and methods for driving a high-side semiconductor switch |
| US7615934B2 (en) * | 2006-12-07 | 2009-11-10 | System General Corp. | High efficiency resonant ballast |
| US7639060B2 (en) * | 2007-03-20 | 2009-12-29 | Denso Corporation | Level shift circuit |
| US7741896B2 (en) | 2008-02-15 | 2010-06-22 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | High voltage drive circuit employing capacitive signal coupling and associated devices and methods |
| US9024700B2 (en) | 2008-02-28 | 2015-05-05 | Peregrine Semiconductor Corporation | Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device |
| US7782115B2 (en) * | 2008-04-11 | 2010-08-24 | Asic Advantage Inc. | Voltage level shifter |
| US20110101946A1 (en) * | 2008-06-30 | 2011-05-05 | James Hung Nguyen | Voltage converters |
| US8212536B2 (en) * | 2009-12-23 | 2012-07-03 | R2 Semiconductor, Inc. | Stacked NMOS DC-to-DC power conversion |
| DE102010018997B4 (de) * | 2010-05-03 | 2013-04-04 | Semikron Elektronik Gmbh & Co. Kg | Ansteuerschaltung mit Übertragungsschaltung zur kapazitiven Übertragung eines Signals und zugeordnetes Verfahren |
| CN103425170A (zh) * | 2012-05-22 | 2013-12-04 | 联合聚晶股份有限公司 | 自适应负载变化的电源供应电路 |
| DE102012220213B3 (de) * | 2012-11-07 | 2014-05-22 | Semikron Elektronik Gmbh & Co. Kg | Ansteuerschaltung mit Übertragungsschaltung und Verfahren zum Betrieb |
| US9698728B2 (en) | 2012-12-13 | 2017-07-04 | Texas Instruments Incorporated | Digital isolator |
| KR101477377B1 (ko) * | 2013-03-20 | 2014-12-29 | 삼성전기주식회사 | 게이트 구동 장치 및 이를 갖는 인버터 |
| JP6247299B2 (ja) * | 2013-08-01 | 2017-12-13 | 株式会社日立製作所 | 半導体装置及び電力変換装置 |
| US9374006B2 (en) * | 2014-10-24 | 2016-06-21 | Edgar Abdoulin | Three-channel high-side gate driver having startup circuit and configurable outputs |
| US9484897B2 (en) * | 2015-03-18 | 2016-11-01 | Peregrine Semiconductor Corporation | Level shifter |
| US9912327B2 (en) * | 2015-03-18 | 2018-03-06 | Peregrine Semiconductor Corporation | Dead time control circuit for a level shifter |
| US9837325B2 (en) | 2015-06-16 | 2017-12-05 | Peregrine Semiconductor Corporation | Electrically testable microwave integrated circuit packaging |
| US9837412B2 (en) | 2015-12-09 | 2017-12-05 | Peregrine Semiconductor Corporation | S-contact for SOI |
| JP2019519543A (ja) | 2016-06-07 | 2019-07-11 | デルマヴァント サイエンシーズ ゲーエムベーハーＤｅｒｍａｖａｎｔ Ｓｃｉｅｎｃｅｓ Ｇｍｂｈ | Ｐｄｅ−４阻害剤の局所処方物およびそれらの使用方法 |
| US10348293B2 (en) | 2017-06-19 | 2019-07-09 | Psemi Corporation | Timing controller for dead-time control |
| US10116297B1 (en) | 2017-06-19 | 2018-10-30 | Psemi Corporation | DC-coupled high-voltage level shifter |
-
2017
- 2017-06-19 US US15/627,196 patent/US10116297B1/en active Active
-
2018
- 2018-06-18 WO PCT/US2018/038123 patent/WO2018236771A1/en not_active Ceased
- 2018-06-18 JP JP2020519020A patent/JP7155255B2/ja active Active
- 2018-06-18 CN CN201880040651.XA patent/CN110771043B/zh active Active
- 2018-06-18 KR KR1020207000723A patent/KR102544761B1/ko active Active
- 2018-06-18 DE DE112018003130.6T patent/DE112018003130T5/de not_active Withdrawn
-
2019
- 2019-11-20 US US16/689,916 patent/US10979042B2/en active Active
-
2021
- 2021-04-08 US US17/225,647 patent/US11658654B2/en active Active
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