JP7149428B2 - 半導体装置製造システムおよび半導体装置製造方法 - Google Patents

半導体装置製造システムおよび半導体装置製造方法 Download PDF

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JP7149428B2
JP7149428B2 JP2021539941A JP2021539941A JP7149428B2 JP 7149428 B2 JP7149428 B2 JP 7149428B2 JP 2021539941 A JP2021539941 A JP 2021539941A JP 2021539941 A JP2021539941 A JP 2021539941A JP 7149428 B2 JP7149428 B2 JP 7149428B2
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foreign matter
semiconductor device
semiconductor
manufacturing system
device manufacturing
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JPWO2021241242A1 (https=
JPWO2021241242A5 (https=
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徹 荒巻
剛 斉藤
健一郎 米田
祐治 榎本
貴志 堤
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Medical Informatics (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Drying Of Semiconductors (AREA)
  • Noodles (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2021539941A 2020-05-25 2021-05-13 半導体装置製造システムおよび半導体装置製造方法 Active JP7149428B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2020/020456 WO2021240572A1 (ja) 2020-05-25 2020-05-25 半導体装置製造システムおよび半導体装置製造方法
JPPCT/JP2020/020456 2020-05-25
PCT/JP2021/018152 WO2021241242A1 (ja) 2020-05-25 2021-05-13 半導体装置製造システムおよび半導体装置製造方法

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JPWO2021241242A1 JPWO2021241242A1 (https=) 2021-12-02
JPWO2021241242A5 JPWO2021241242A5 (https=) 2022-06-20
JP7149428B2 true JP7149428B2 (ja) 2022-10-06

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US (2) US12537175B2 (https=)
JP (1) JP7149428B2 (https=)
KR (1) KR102567781B1 (https=)
CN (1) CN113994453B (https=)
TW (1) TWI811687B (https=)
WO (2) WO2021240572A1 (https=)

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CN117121169A (zh) 2022-03-24 2023-11-24 株式会社日立高新技术 装置诊断系统、装置诊断装置、半导体装置制造系统以及装置诊断方法
CN115223884B (zh) * 2022-09-20 2023-01-03 深圳市威兆半导体股份有限公司 一种反馈式mosfet沟槽的清洗干燥方法、装置及介质
CN116666198B (zh) * 2023-07-26 2024-01-12 恒超源洗净科技(深圳)有限公司 一种半导体器件全自动超声波清洗方法及系统
CN121666898A (zh) * 2024-07-01 2026-03-13 株式会社日立高新技术 半导体器件制造系统、服务器以及异物产生原因确定方法

Citations (9)

* Cited by examiner, † Cited by third party
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JP2002016123A (ja) 2000-06-29 2002-01-18 Hitachi Ltd 試料処理装置および処理方法
JP2004241499A (ja) 2003-02-04 2004-08-26 Hitachi High-Technologies Corp 真空処理装置の異物管理装置及び異物管理方法
JP2006086325A (ja) 2004-09-16 2006-03-30 Tokyo Electron Ltd クリーニングの終点検出方法
JP2006202912A (ja) 2005-01-19 2006-08-03 Tokyo Electron Ltd 基板処理装置の検査方法及び検査プログラム
WO2015178348A1 (ja) 2014-05-20 2015-11-26 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
JP2016122772A (ja) 2014-12-25 2016-07-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
JP2018156994A (ja) 2017-03-15 2018-10-04 東京エレクトロン株式会社 基板処理装置の制御装置及び基板処理表示方法
JP2019125686A (ja) 2018-01-16 2019-07-25 東京エレクトロン株式会社 プラズマ処理装置の部品のクリーニング方法
JP6696059B1 (ja) 2019-03-04 2020-05-20 Ｓｐｐテクノロジーズ株式会社 基板処理装置のプロセス判定装置、基板処理システム及び基板処理装置のプロセス判定方法

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JP2002016123A (ja) 2000-06-29 2002-01-18 Hitachi Ltd 試料処理装置および処理方法
JP2004241499A (ja) 2003-02-04 2004-08-26 Hitachi High-Technologies Corp 真空処理装置の異物管理装置及び異物管理方法
JP2006086325A (ja) 2004-09-16 2006-03-30 Tokyo Electron Ltd クリーニングの終点検出方法
JP2006202912A (ja) 2005-01-19 2006-08-03 Tokyo Electron Ltd 基板処理装置の検査方法及び検査プログラム
WO2015178348A1 (ja) 2014-05-20 2015-11-26 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
JP2016122772A (ja) 2014-12-25 2016-07-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
JP2018156994A (ja) 2017-03-15 2018-10-04 東京エレクトロン株式会社 基板処理装置の制御装置及び基板処理表示方法
JP2019125686A (ja) 2018-01-16 2019-07-25 東京エレクトロン株式会社 プラズマ処理装置の部品のクリーニング方法
JP6696059B1 (ja) 2019-03-04 2020-05-20 Ｓｐｐテクノロジーズ株式会社 基板処理装置のプロセス判定装置、基板処理システム及び基板処理装置のプロセス判定方法

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TWI811687B (zh) 2023-08-11
JPWO2021241242A1 (https=) 2021-12-02
WO2021240572A1 (ja) 2021-12-02
KR102567781B1 (ko) 2023-08-18
TW202145304A (zh) 2021-12-01
KR20210148092A (ko) 2021-12-07
US20230072665A1 (en) 2023-03-09
CN113994453B (zh) 2025-03-21
WO2021241242A1 (ja) 2021-12-02
CN113994453A (zh) 2022-01-28
US20260011538A1 (en) 2026-01-08
US12537175B2 (en) 2026-01-27

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