1237864 五、發明說明(1) 【發明所屬之技術領域】 本發明係關於一種判斷無塵室是否有有機碳化污染物 的方法,特別是關於一種使用洗淨製程來判斷無塵室是否 有有機碳化污染物的方法。 【先前技術】 依據半導體工業的鐵則-摩爾定律的預測,半導體晶 片上所能容納的電晶體數量是以每1 . 5至2年為一週期,逐 期倍增。再舊的技術裡,單位面積内只能容納一千個電晶 體的晶片,在新的技術裡卻能擠進二千個。所以同樣製作 一片含一千個電晶體的晶片,尺寸將是過去的一半。因為 單位面積内擁有更多的電晶體,因此I C晶片中導線電路的 間距極小,故當有異物、微粒子(part icle)、金屬雜質、 表面附著有機物、化學污染物等等,都會對良率(y i e 1 d ) 產生重大的影響,所以隨著半導體製程的進展與變化,對 無塵室和廠務設備(u t i 1 i t y )的要求逐漸增加。 而,無塵室的基本構成包括由吊桿(ceiling rod)、 鋼樑(I-Beam或 U-Beam)、天花板格子樑(Ceiling grid 或 C e i 1 i n g f r a m e )所構成的天花板系統,由空氣艙、過 濾器系統、風車等所構成的空調系統,隔牆板 (P a r t i t i ο n a 1 ),由高架地板或防靜電舒美地板所構成之 地板,與照明器具等,但是上述之無塵室建材表面或建材 之連接點易產生揮發性有機分子附著在晶圓表面,因此, 當無塵室運作時,須對無塵室進行一有機碳化污染物的存 在與否的判斷,以避免量產時有機碳化物對晶圓造成污染1237864 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a method for determining whether there is an organic carbonized pollutant in a clean room, and in particular to a method for determining whether there is an organic carbonization in a clean room using a cleaning process. Contaminant methods. [Previous Technology] According to the prediction of the Moore's Law of the semiconductor industry, the number of transistors that can be accommodated on a semiconductor wafer is doubled every 1.5 to 2 years. No matter how old the technology is, only one thousand crystal chips can be accommodated in a unit area, but in the new technology, it can squeeze two thousand. So also make a wafer containing a thousand transistors, which will be half the size of the past. Because there are more transistors in a unit area, the pitch of the lead circuits in the IC chip is extremely small. Therefore, when there are foreign objects, part icles, metal impurities, organic substances attached to the surface, chemical contaminants, etc., the yield ( yie 1 d) has a significant impact, so with the progress and changes in the semiconductor process, the requirements for clean rooms and factory equipment (uti 1 ity) have gradually increased. The basic structure of a clean room includes a ceiling system consisting of ceiling rods, steel beams (I-Beam or U-Beam), ceiling grid beams (Ceiling grid or Ceiling frame), and an air chamber. , Filter systems, windmills and other air-conditioning systems, partition walls (P artiti ο na 1), floors composed of raised floors or anti-static Shumei floor, and lighting appliances, but the above-mentioned clean room building materials Surfaces or connection points of building materials are prone to volatile organic molecules attached to the wafer surface. Therefore, when the clean room is operating, the presence of an organic carbonized pollutant must be judged on the clean room to avoid mass production. Organic carbides pollute wafers
第5頁 1237864 五、發明說明(2) 〇 所以,本發明針對上述之問題提出一種判斷無塵室是 否有有機碳化污染物的方法,來對無塵室之狀態進行判斷 ,並進而避免晶圓因無塵室内之構成物導致失效的危險。 【發明内容】 本發明之主要目的,在於提供一種判斷無塵室是否有 有機碳化污染物的方法,其係利用晶圓處於有有機碳化污 染物之氣氛後,經洗淨製程能夠將吸附於晶圓表面的有機 碳化物形成微粒子顯現出來,進而利用洗淨前後微粒子數 值的變化,而有效且簡便的判斷無塵室是否有有機碳化物 污染的問題。 本發明之另一目的,在於提供一種判斷無塵室是否有 有機碳化污染物的方法,其能夠降低元件因有機碳化物污 染而導致良率下降的機率。 為達上述之目的,本發明提供一種判斷無塵室是否有 有機碳化污染物的方法,其先提供一晶圓;將晶圓置於待 量測之無塵室經一特定時間後,量測晶圓表面之微粒子的 數量值,然後將晶圓經過一洗淨製程後,量測晶圓表面的 微粒子數量值,由表面微粒子數值的變化即可得知無塵室 是否有有機碳化污染物的問題,進而提供了定性、且簡易 判斷無塵室的有機碳化污染物的方法。 茲為使 貴審查委員對本發明之結構特徵及所達成之 功效更有進一步之瞭解與認識,謹佐以較佳之實施例圖及 配合詳細之說明,說明如後:Page 5 1237864 V. Explanation of the invention (2) ○ Therefore, the present invention proposes a method for judging whether there is an organic carbonized pollutant in the clean room in order to judge the state of the clean room and avoid wafers Danger of failure due to components in clean room. [Summary of the Invention] The main purpose of the present invention is to provide a method for determining whether there is an organic carbonized pollutant in a clean room. The method uses a wafer in an atmosphere with organic carbonized pollutants, and can be adsorbed on a crystal by a washing process. The particles formed on the round surface of organic carbides appear, and then the value of the particles before and after washing is used to effectively and simply determine whether there is a problem of organic carbide pollution in the clean room. Another object of the present invention is to provide a method for judging whether there is an organic carbonized pollutant in a clean room, which can reduce the probability that the yield of a component is reduced due to organic carbide contamination. To achieve the above object, the present invention provides a method for determining whether there is an organic carbonized pollutant in a clean room, which first provides a wafer; the wafer is placed in the clean room to be measured for a specific time, and then measured. The number of particles on the surface of the wafer, and then after the wafer is subjected to a cleaning process, the number of particles on the surface of the wafer is measured. The change in the number of particles on the surface can be used to determine whether there are organic carbonized pollutants in the clean room. The problem further provides a qualitative and easy method for judging the organic carbonized pollutants in the clean room. In order to make your review members have a better understanding and understanding of the structural features and effects achieved by the present invention, I would like to refer to the preferred embodiment diagrams and detailed descriptions as follows:
第6頁 1237864 五、發明說明(3) 【實施方式】 本發明為一種判斷無塵室是否有有機碳化污染物的方 法,其量測的方式,如第一圖所示,首先如步驟S 1 0係先 將一晶圓以一具有開放式開口之晶圓存放盒盛載,然後如 步驟S 1 2放置於無塵室一特定時間後,如步驟s 1 4利用表面 污染分析儀(S u r f a c e s c a η )對晶圓表面進行一表面微粒子 數量值(PD )量測,然後如步驟S 1 6將晶圓置於洗淨設備 (Scrubber )内進行一清洗製程,再如步驟S1 8對晶圓表面 進行一表面微粒子數量值量測,最後如步驟S 2 0進行表面 微粒子數值比較,由表面微粒子數值的變化即可得知無塵 室是否有有機碳化物污染的問題,其中該晶圓可以為一控 片,甚至也可是一經表面氧化製程之晶圓。 請參閱表一與第二圖,其係以十個晶圓在十個不同的 監控時間下,對無塵室是否有有機碳化污染物進行判斷的 例子,其中每單一晶圓所使用之有機碳化污染物的判斷方 法皆與上述之步驟相同,只是其特定監控的時間不同,依 據表一與第二圖中可明顯的發現隨著監控時間越長,晶圓 在經清洗後所測得之微粒子數量值就越多,因此可得知隨 著晶圓在無塵室暴露的時間增長,晶圓表面所吸附有機碳 化污染物逐漸增多。 更者,為進一步驗證本發明之利用洗淨機對晶圓進行 洗淨製程後之晶圓表面的微粒子數變化確實可作有機碳化 污染物的判斷,係使用掃描式電子顯微鏡(SEΜ)與能量分 散光譜儀(E D S )對經洗淨後之裸晶晶圓作表面分析,請一Page 6 1237864 V. Description of the invention (3) [Embodiment] The present invention is a method for determining whether there is an organic carbonized pollutant in the clean room. The measurement method is as shown in the first figure, and the first step is S1. 0 is to load a wafer in a wafer storage box with an open opening, and then place it in a clean room for a specific time as in step S 1 2 and use a surface contamination analyzer (Surfacesca η) Perform a surface particle number (PD) measurement on the wafer surface, and then place the wafer in a scrubbing device (Scrubber) for a cleaning process in step S16, and then perform step S18 on the wafer surface Perform a measurement of the number of surface particles, and finally compare the values of surface particles in step S20. From the change of the values of surface particles, it can be known whether the clean room has organic carbide contamination. The wafer can be a The control wafer can even be a wafer subjected to a surface oxidation process. Please refer to Table 1 and Figure 2. It is an example of judging whether there are organic carbonized pollutants in the clean room with ten wafers under ten different monitoring times, in which the organic carbonization of each single wafer is used The method of judging the pollutants is the same as the above steps, but the specific monitoring time is different. According to Table 1 and the second figure, it can be clearly found that as the monitoring time is longer, the particles measured after the wafer is cleaned The more the quantity value, it can be known that as the wafer exposure time in the clean room increases, the organic carbonized pollutants adsorbed on the wafer surface gradually increase. Furthermore, in order to further verify that the change in the number of particles on the surface of the wafer after the wafer is cleaned by the cleaning machine of the present invention can indeed be used to judge the organic carbonized pollutants, a scanning electron microscope (SEM) and energy are used. Dispersive spectrometer (EDS) for surface analysis of cleaned bare wafers.
1237864 五、發明說明(4) 併參閱第三圖與第四圖,由圖中可發現晶圓上的微粒子, 確實含有碳元素,因此證明經洗淨製程後,晶圓表面之微 粒子數值增加與否,確實可作為有機碳化污染物是否存在 的判斷依據。 於此,為驗證即使經過表面熱處理之晶圓仍可作為判 斷有無有機碳污染物的晶圓,請參閱第五圖與第六圖,其 係為使用經表面氧化製程之晶圓來作為監控晶圓的表面電 子顯微鏡照相圖,與對該表面電子顯微鏡照相圖所顯現之 微粒子所作E D S分析能譜,由能譜可證明洗淨製程後,經 氧化製程後之晶圓表面所增加的微粒子確實含有碳元素, 因此經表面熱處理後之晶圓仍可作為是否有有機碳化污染 物之監控晶圓。 綜上所述,本發明係為一種判斷無塵室是否有有機碳 化污染物的方法,其係利用經放置於無塵室的晶圓表面若 吸附有機碳化污染物後,經洗淨製程後會有表面微粒子含 量升高的現象,來作為判斷無塵室是否有有機碳化污染物 的方法,其係相較於習知對無塵室的有機碳化污染物難以 監制的問題提出一簡單的方式來解決,使無塵室内是否有 無機碳化污染物的問題能更具效率與簡便的掌控。 惟以上所述者,僅為本發明一較佳實施例而已,並非 用來限定本發明實施之範圍,故舉凡依本發明申請專利範 圍所述之形狀、構造、特徵及精神所為之均等變化與修飾 ,均應包括於本發明之申請專利範圍内。1237864 V. Description of the invention (4) and referring to the third and fourth figures, it can be found from the figure that the particles on the wafer do contain carbon element. Therefore, it is proved that the number of particles on the wafer surface increases after the cleaning process. No, it can be used as a basis for judging the existence of organic carbonized pollutants. Here, in order to verify that even wafers that have undergone surface heat treatment can still be used as wafers for determining the presence or absence of organic carbon contaminants, please refer to Figures 5 and 6, which use wafers that have undergone a surface oxidation process as a monitoring crystal. Electron microscopy of a round surface, and EDS analysis of the microparticles shown on the surface electron microscopy. The energy spectrum can prove that after the cleaning process, the microparticles added to the surface of the wafer after the oxidation process do contain Carbon, so the wafer after the surface heat treatment can still be used as a monitoring wafer for organic carbonized pollutants. In summary, the present invention is a method for judging whether there is an organic carbonized pollutant in the clean room. It uses the surface of the wafer placed in the clean room to adsorb organic carbonized pollutants, and then cleans them. There is an increase in the surface particulate content as a method to determine whether there are organic carbonized pollutants in the clean room. Compared with the conventional problem that it is difficult to monitor the organic carbonized pollutants in the clean room, a simple method is proposed. Solve the problem of whether there are inorganic carbonized pollutants in the clean room can be controlled more efficiently and simply. However, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of implementation of the present invention. Therefore, for example, changes in shape, structure, characteristics, and spirit in accordance with the scope of the patent application for the present invention are equivalent. Modifications should be included in the scope of patent application of the present invention.
1237864 圖式簡單說明 【圖式簡單說明】 第一圖係為本發明之步驟流程示意圖。 第二圖係為本發明依據表一使用十個晶圓在十個不同時間 間隔下,對無塵室進行有無有機碳化污染物監控之微粒子 數值變化曲線。 第三圖係一裸晶晶圓之表面於電子顯微鏡下的示意圖。 第四圖係對第三圖之表面於電子顯微鏡下的示意圖所顯現 之微粒子進行EDS分析所得之EDS分析能譜。 第五圖係一經表面氧化處理之晶圓的表面電子顯微鏡下的 示意圖。 第六圖係對第五圖之表面電子顯微鏡下的示意圖所顯現之 微粒子進行EDS分析所得之EDS分析能譜。 表一1237864 Brief description of the drawings [Simplified description of the drawings] The first diagram is a schematic diagram of the steps of the present invention. The second figure is a curve of the numerical values of particles in the clean room for monitoring the presence or absence of organic carbonized pollutants using ten wafers at ten different time intervals according to Table 1. The third figure is a schematic view of the surface of a bare wafer under an electron microscope. The fourth figure is an EDS analysis spectrum obtained by performing an EDS analysis on the microparticles shown on the surface of the third figure in a schematic diagram under an electron microscope. The fifth figure is a schematic view of a surface-oxidized wafer under a surface electron microscope. The sixth diagram is an EDS analysis spectrum obtained by performing an EDS analysis on the microparticles shown in the schematic diagram of the surface electron microscope in the fifth diagram. Table I
1237864 圖式簡單說明 晶圓清洗前的 微粒子數值 9 12 12 22 17 16 36 146 39 199 晶圓清洗後的 微粒子數值 9 10 6 7 847 2652 3295 4533 6733 21385 .特定時間長度 (天) 1 2 3 4 7 8 9 10 11 141237864 The figure briefly explains the particle value before wafer cleaning 9 12 12 22 17 16 36 146 39 199 Particle value after wafer cleaning 9 10 6 7 847 2652 3295 4533 6733 21385. Specific time length (days) 1 2 3 4 7 8 9 10 11 14
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