CN113994453B - 半导体装置制造系统以及半导体装置制造方法 - Google Patents

半导体装置制造系统以及半导体装置制造方法 Download PDF

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Publication number
CN113994453B
CN113994453B CN202180002514.9A CN202180002514A CN113994453B CN 113994453 B CN113994453 B CN 113994453B CN 202180002514 A CN202180002514 A CN 202180002514A CN 113994453 B CN113994453 B CN 113994453B
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foreign matter
semiconductor device
manufacturing apparatus
semiconductor
cleaning
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Chinese (zh)
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CN113994453A (zh
Inventor
荒卷彻
齐藤刚
米田健一郎
榎本祐治
堤贵志
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Medical Informatics (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Drying Of Semiconductors (AREA)
  • Noodles (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN202180002514.9A 2020-05-25 2021-05-13 半导体装置制造系统以及半导体装置制造方法 Active CN113994453B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2020/020456 WO2021240572A1 (ja) 2020-05-25 2020-05-25 半導体装置製造システムおよび半導体装置製造方法
JPPCT/JP2020/020456 2020-05-25
PCT/JP2021/018152 WO2021241242A1 (ja) 2020-05-25 2021-05-13 半導体装置製造システムおよび半導体装置製造方法

Publications (2)

Publication Number Publication Date
CN113994453A CN113994453A (zh) 2022-01-28
CN113994453B true CN113994453B (zh) 2025-03-21

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Country Link
US (2) US12537175B2 (https=)
JP (1) JP7149428B2 (https=)
KR (1) KR102567781B1 (https=)
CN (1) CN113994453B (https=)
TW (1) TWI811687B (https=)
WO (2) WO2021240572A1 (https=)

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* Cited by examiner, † Cited by third party
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CN117121169A (zh) 2022-03-24 2023-11-24 株式会社日立高新技术 装置诊断系统、装置诊断装置、半导体装置制造系统以及装置诊断方法
CN115223884B (zh) * 2022-09-20 2023-01-03 深圳市威兆半导体股份有限公司 一种反馈式mosfet沟槽的清洗干燥方法、装置及介质
CN116666198B (zh) * 2023-07-26 2024-01-12 恒超源洗净科技(深圳)有限公司 一种半导体器件全自动超声波清洗方法及系统
CN121666898A (zh) * 2024-07-01 2026-03-13 株式会社日立高新技术 半导体器件制造系统、服务器以及异物产生原因确定方法

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JP3862322B2 (ja) * 1996-07-25 2006-12-27 株式会社ルネサステクノロジ 半導体装置の製造システムおよびそれを用いた半導体装置の製造方法
US6419801B1 (en) * 1998-04-23 2002-07-16 Sandia Corporation Method and apparatus for monitoring plasma processing operations
JP2002016123A (ja) * 2000-06-29 2002-01-18 Hitachi Ltd 試料処理装置および処理方法
JP4738610B2 (ja) * 2001-03-02 2011-08-03 株式会社トプコン 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法
JP4363860B2 (ja) * 2003-02-04 2009-11-11 株式会社日立ハイテクノロジーズ 真空処理装置の異物管理装置及び異物管理方法
JP4355193B2 (ja) * 2003-11-10 2009-10-28 株式会社ルネサステクノロジ 半導体デバイスの製造方法及び半導体デバイス製造システム
TWI237864B (en) * 2004-05-25 2005-08-11 Grace Semiconductor Mfg Corp Method of judging existence of the organic carbonized pollutant in clean room
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US7191082B2 (en) 2005-01-19 2007-03-13 Tokyo Electron Limited Method of inspecting substrate processing apparatus, and storage medium storing inspection program for executing the method
JP5192122B2 (ja) * 2005-01-19 2013-05-08 東京エレクトロン株式会社 基板処理装置の検査方法及び検査プログラム
JP5281766B2 (ja) * 2007-07-31 2013-09-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP2008034877A (ja) 2007-10-10 2008-02-14 Hitachi Ltd 半導体装置の製造方法および製造システム
JP5518598B2 (ja) * 2010-07-02 2014-06-11 東京エレクトロン株式会社 パーティクル分布解析支援方法及びその方法を実施するためのプログラムを記録した記録媒体
JP6501601B2 (ja) 2014-05-20 2019-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
JP6156850B2 (ja) * 2014-12-25 2017-07-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
WO2018128159A1 (ja) * 2017-01-06 2018-07-12 富士フイルム株式会社 薬液の品質検査方法
JP6877200B2 (ja) 2017-03-15 2021-05-26 東京エレクトロン株式会社 基板処理装置の制御装置及び基板処理表示方法
JP6799550B2 (ja) * 2018-01-16 2020-12-16 東京エレクトロン株式会社 プラズマ処理装置の部品をクリーニングする方法
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Also Published As

Publication number Publication date
TWI811687B (zh) 2023-08-11
JPWO2021241242A1 (https=) 2021-12-02
JP7149428B2 (ja) 2022-10-06
WO2021240572A1 (ja) 2021-12-02
KR102567781B1 (ko) 2023-08-18
TW202145304A (zh) 2021-12-01
KR20210148092A (ko) 2021-12-07
US20230072665A1 (en) 2023-03-09
WO2021241242A1 (ja) 2021-12-02
CN113994453A (zh) 2022-01-28
US20260011538A1 (en) 2026-01-08
US12537175B2 (en) 2026-01-27

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