JPWO2021241242A1 - - Google Patents

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Publication number
JPWO2021241242A1
JPWO2021241242A1 JP2021539941A JP2021539941A JPWO2021241242A1 JP WO2021241242 A1 JPWO2021241242 A1 JP WO2021241242A1 JP 2021539941 A JP2021539941 A JP 2021539941A JP 2021539941 A JP2021539941 A JP 2021539941A JP WO2021241242 A1 JPWO2021241242 A1 JP WO2021241242A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021539941A
Other languages
Japanese (ja)
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JPWO2021241242A5 (https=
JP7149428B2 (ja
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Publication of JPWO2021241242A1 publication Critical patent/JPWO2021241242A1/ja
Publication of JPWO2021241242A5 publication Critical patent/JPWO2021241242A5/ja
Application granted granted Critical
Publication of JP7149428B2 publication Critical patent/JP7149428B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Medical Informatics (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Drying Of Semiconductors (AREA)
  • Noodles (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2021539941A 2020-05-25 2021-05-13 半導体装置製造システムおよび半導体装置製造方法 Active JP7149428B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2020/020456 WO2021240572A1 (ja) 2020-05-25 2020-05-25 半導体装置製造システムおよび半導体装置製造方法
JPPCT/JP2020/020456 2020-05-25
PCT/JP2021/018152 WO2021241242A1 (ja) 2020-05-25 2021-05-13 半導体装置製造システムおよび半導体装置製造方法

Publications (3)

Publication Number Publication Date
JPWO2021241242A1 true JPWO2021241242A1 (https=) 2021-12-02
JPWO2021241242A5 JPWO2021241242A5 (https=) 2022-06-20
JP7149428B2 JP7149428B2 (ja) 2022-10-06

Family

ID=78723406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021539941A Active JP7149428B2 (ja) 2020-05-25 2021-05-13 半導体装置製造システムおよび半導体装置製造方法

Country Status (6)

Country Link
US (2) US12537175B2 (https=)
JP (1) JP7149428B2 (https=)
KR (1) KR102567781B1 (https=)
CN (1) CN113994453B (https=)
TW (1) TWI811687B (https=)
WO (2) WO2021240572A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117121169A (zh) 2022-03-24 2023-11-24 株式会社日立高新技术 装置诊断系统、装置诊断装置、半导体装置制造系统以及装置诊断方法
CN115223884B (zh) * 2022-09-20 2023-01-03 深圳市威兆半导体股份有限公司 一种反馈式mosfet沟槽的清洗干燥方法、装置及介质
CN116666198B (zh) * 2023-07-26 2024-01-12 恒超源洗净科技(深圳)有限公司 一种半导体器件全自动超声波清洗方法及系统
CN121666898A (zh) * 2024-07-01 2026-03-13 株式会社日立高新技术 半导体器件制造系统、服务器以及异物产生原因确定方法

Citations (9)

* Cited by examiner, † Cited by third party
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JP2002016123A (ja) * 2000-06-29 2002-01-18 Hitachi Ltd 試料処理装置および処理方法
JP2004241499A (ja) * 2003-02-04 2004-08-26 Hitachi High-Technologies Corp 真空処理装置の異物管理装置及び異物管理方法
JP2006086325A (ja) * 2004-09-16 2006-03-30 Tokyo Electron Ltd クリーニングの終点検出方法
JP2006202912A (ja) * 2005-01-19 2006-08-03 Tokyo Electron Ltd 基板処理装置の検査方法及び検査プログラム
WO2015178348A1 (ja) * 2014-05-20 2015-11-26 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
JP2016122772A (ja) * 2014-12-25 2016-07-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
JP2018156994A (ja) * 2017-03-15 2018-10-04 東京エレクトロン株式会社 基板処理装置の制御装置及び基板処理表示方法
JP2019125686A (ja) * 2018-01-16 2019-07-25 東京エレクトロン株式会社 プラズマ処理装置の部品のクリーニング方法
JP6696059B1 (ja) * 2019-03-04 2020-05-20 Ｓｐｐテクノロジーズ株式会社 基板処理装置のプロセス判定装置、基板処理システム及び基板処理装置のプロセス判定方法

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JP3862322B2 (ja) * 1996-07-25 2006-12-27 株式会社ルネサステクノロジ 半導体装置の製造システムおよびそれを用いた半導体装置の製造方法
US6419801B1 (en) * 1998-04-23 2002-07-16 Sandia Corporation Method and apparatus for monitoring plasma processing operations
JP4738610B2 (ja) * 2001-03-02 2011-08-03 株式会社トプコン 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法
JP4355193B2 (ja) * 2003-11-10 2009-10-28 株式会社ルネサステクノロジ 半導体デバイスの製造方法及び半導体デバイス製造システム
TWI237864B (en) * 2004-05-25 2005-08-11 Grace Semiconductor Mfg Corp Method of judging existence of the organic carbonized pollutant in clean room
US7191082B2 (en) 2005-01-19 2007-03-13 Tokyo Electron Limited Method of inspecting substrate processing apparatus, and storage medium storing inspection program for executing the method
JP5281766B2 (ja) * 2007-07-31 2013-09-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP2008034877A (ja) 2007-10-10 2008-02-14 Hitachi Ltd 半導体装置の製造方法および製造システム
JP5518598B2 (ja) * 2010-07-02 2014-06-11 東京エレクトロン株式会社 パーティクル分布解析支援方法及びその方法を実施するためのプログラムを記録した記録媒体
WO2018128159A1 (ja) * 2017-01-06 2018-07-12 富士フイルム株式会社 薬液の品質検査方法
US10754310B2 (en) * 2018-10-18 2020-08-25 International Business Machines Corporation Incorporating change diagnosis using probabilistic tensor regression model for improving processing of materials
KR20200061237A (ko) * 2018-11-23 2020-06-02 삼성전자주식회사 반도체 설비의 세정 방법, 및 반도체 설비의 관리 시스템
US11263737B2 (en) * 2019-01-10 2022-03-01 Lam Research Corporation Defect classification and source analysis for semiconductor equipment
KR20220083811A (ko) * 2019-10-23 2022-06-20 램 리써치 코포레이션 반도체 제작을 위한 레시피의 결정 (determination)
US11901204B2 (en) * 2020-05-22 2024-02-13 Applied Materials, Inc. Predictive wafer scheduling for multi-chamber semiconductor equipment

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016123A (ja) * 2000-06-29 2002-01-18 Hitachi Ltd 試料処理装置および処理方法
JP2004241499A (ja) * 2003-02-04 2004-08-26 Hitachi High-Technologies Corp 真空処理装置の異物管理装置及び異物管理方法
JP2006086325A (ja) * 2004-09-16 2006-03-30 Tokyo Electron Ltd クリーニングの終点検出方法
JP2006202912A (ja) * 2005-01-19 2006-08-03 Tokyo Electron Ltd 基板処理装置の検査方法及び検査プログラム
WO2015178348A1 (ja) * 2014-05-20 2015-11-26 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
JP2016122772A (ja) * 2014-12-25 2016-07-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
JP2018156994A (ja) * 2017-03-15 2018-10-04 東京エレクトロン株式会社 基板処理装置の制御装置及び基板処理表示方法
JP2019125686A (ja) * 2018-01-16 2019-07-25 東京エレクトロン株式会社 プラズマ処理装置の部品のクリーニング方法
JP6696059B1 (ja) * 2019-03-04 2020-05-20 Ｓｐｐテクノロジーズ株式会社 基板処理装置のプロセス判定装置、基板処理システム及び基板処理装置のプロセス判定方法

Also Published As

Publication number Publication date
TWI811687B (zh) 2023-08-11
JP7149428B2 (ja) 2022-10-06
WO2021240572A1 (ja) 2021-12-02
KR102567781B1 (ko) 2023-08-18
TW202145304A (zh) 2021-12-01
KR20210148092A (ko) 2021-12-07
US20230072665A1 (en) 2023-03-09
CN113994453B (zh) 2025-03-21
WO2021241242A1 (ja) 2021-12-02
CN113994453A (zh) 2022-01-28
US20260011538A1 (en) 2026-01-08
US12537175B2 (en) 2026-01-27

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