KR102567781B1 - 반도체 장치 제조 시스템 및 반도체 장치 제조 방법 - Google Patents

반도체 장치 제조 시스템 및 반도체 장치 제조 방법 Download PDF

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KR102567781B1
KR102567781B1 KR1020217027633A KR20217027633A KR102567781B1 KR 102567781 B1 KR102567781 B1 KR 102567781B1 KR 1020217027633 A KR1020217027633 A KR 1020217027633A KR 20217027633 A KR20217027633 A KR 20217027633A KR 102567781 B1 KR102567781 B1 KR 102567781B1
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foreign material
manufacturing apparatus
semiconductor manufacturing
semiconductor
semiconductor device
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KR20210148092A (ko
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도오루 아라마키
고 사이토
겐이치로 고메다
유우지 에노모토
다카시 츠츠미
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주식회사 히타치하이테크
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H01L21/67288—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H01L21/67069—
    • H01L21/67253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Medical Informatics (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Drying Of Semiconductors (AREA)
  • Noodles (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020217027633A 2020-05-25 2021-05-13 반도체 장치 제조 시스템 및 반도체 장치 제조 방법 Active KR102567781B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP2020/020456 WO2021240572A1 (ja) 2020-05-25 2020-05-25 半導体装置製造システムおよび半導体装置製造方法
JPPCT/JP2020/020456 2020-05-25
PCT/JP2021/018152 WO2021241242A1 (ja) 2020-05-25 2021-05-13 半導体装置製造システムおよび半導体装置製造方法

Publications (2)

Publication Number Publication Date
KR20210148092A KR20210148092A (ko) 2021-12-07
KR102567781B1 true KR102567781B1 (ko) 2023-08-18

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US (2) US12537175B2 (https=)
JP (1) JP7149428B2 (https=)
KR (1) KR102567781B1 (https=)
CN (1) CN113994453B (https=)
TW (1) TWI811687B (https=)
WO (2) WO2021240572A1 (https=)

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CN117121169A (zh) 2022-03-24 2023-11-24 株式会社日立高新技术 装置诊断系统、装置诊断装置、半导体装置制造系统以及装置诊断方法
CN115223884B (zh) * 2022-09-20 2023-01-03 深圳市威兆半导体股份有限公司 一种反馈式mosfet沟槽的清洗干燥方法、装置及介质
CN116666198B (zh) * 2023-07-26 2024-01-12 恒超源洗净科技(深圳)有限公司 一种半导体器件全自动超声波清洗方法及系统
CN121666898A (zh) * 2024-07-01 2026-03-13 株式会社日立高新技术 半导体器件制造系统、服务器以及异物产生原因确定方法

Citations (1)

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JP2006086325A (ja) 2004-09-16 2006-03-30 Tokyo Electron Ltd クリーニングの終点検出方法

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US6419801B1 (en) * 1998-04-23 2002-07-16 Sandia Corporation Method and apparatus for monitoring plasma processing operations
JP2002016123A (ja) * 2000-06-29 2002-01-18 Hitachi Ltd 試料処理装置および処理方法
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JP4363860B2 (ja) * 2003-02-04 2009-11-11 株式会社日立ハイテクノロジーズ 真空処理装置の異物管理装置及び異物管理方法
JP4355193B2 (ja) * 2003-11-10 2009-10-28 株式会社ルネサステクノロジ 半導体デバイスの製造方法及び半導体デバイス製造システム
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JP5281766B2 (ja) * 2007-07-31 2013-09-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP2008034877A (ja) 2007-10-10 2008-02-14 Hitachi Ltd 半導体装置の製造方法および製造システム
JP5518598B2 (ja) * 2010-07-02 2014-06-11 東京エレクトロン株式会社 パーティクル分布解析支援方法及びその方法を実施するためのプログラムを記録した記録媒体
JP6501601B2 (ja) 2014-05-20 2019-04-17 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板処理プログラム
JP6156850B2 (ja) * 2014-12-25 2017-07-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
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TWI811687B (zh) 2023-08-11
JPWO2021241242A1 (https=) 2021-12-02
JP7149428B2 (ja) 2022-10-06
WO2021240572A1 (ja) 2021-12-02
TW202145304A (zh) 2021-12-01
KR20210148092A (ko) 2021-12-07
US20230072665A1 (en) 2023-03-09
CN113994453B (zh) 2025-03-21
WO2021241242A1 (ja) 2021-12-02
CN113994453A (zh) 2022-01-28
US20260011538A1 (en) 2026-01-08
US12537175B2 (en) 2026-01-27

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