JP7147669B2 - 半導体受光素子 - Google Patents
半導体受光素子 Download PDFInfo
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- JP7147669B2 JP7147669B2 JP2019073929A JP2019073929A JP7147669B2 JP 7147669 B2 JP7147669 B2 JP 7147669B2 JP 2019073929 A JP2019073929 A JP 2019073929A JP 2019073929 A JP2019073929 A JP 2019073929A JP 7147669 B2 JP7147669 B2 JP 7147669B2
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- 239000004065 semiconductor Substances 0.000 title claims description 97
- 239000002184 metal Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000012535 impurity Substances 0.000 claims description 35
- 230000031700 light absorption Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 14
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
Description
本発明における第1の実施形態を説明する。本実施形態は、本発明における基本の実施形態である。
図6は、第2の実施形態を説明する、半導体受光素子600の断面構造図である。本実施形態は、実施形態1において、n型のInPを含むコンタクト層204に隣接する半導体層(InGaAsを含む光吸収層203)と、n型のInPを含むコンタクト層204に接する金属電極206とを絶縁膜607によってアイソレーションした構造である。n型のInPを含むコンタクト層(半導体層)204と成長方向に対し平行となる面で接する金属電極206と、InGaAsを含む光吸収層203とが、成長方向に垂直な面で接触していないことを特徴とする。
第3の実施形態は、第2の実施形態で示した構造において、図7に示すように、さらに、金属からなるミラー膜205と半導体コンタクト層であるn型のInPを含むコンタクト層204との間に、絶縁膜707を形成した構造を有する半導体受光素子700である。金属を含むミラー膜205と、金属電極206と接するコンタクト層(半導体層)204とが、接触していない構造となる。
101、201 InP基板
102、202 コンタクト層
103、203 光吸収層
104、204 コンタクト層
105 反射ミラー
205 ミラー膜
106 リング状の電極
206 金属電極
307、407、507 フォトレジスト
607、707 絶縁膜
Claims (8)
- 第一の不純物がドーピングされた半導体層と、
前記第一の不純物がドーピングされた半導体層上の入射光を吸収するようバンドギャップエネルギーが調整された半導体光吸収層と、
前記半導体光吸収層上の第二の不純物がドーピングされた半導体層と、
前記第二の不純物がドーピングされた半導体層上の、前記入射光を反射する金属を含むミラー膜と、
前記第二の不純物がドーピングされた半導体層の側面と接触する金属電極と、
を備えた半導体受光素子において、前記金属電極の側面は、前記第二の不純物がドーピングされた半導体層の成長方向に対し平行となる面であることを特徴とする半導体受光素子。 - 前記第二の不純物がドーピングされた半導体層と前記第二の不純物がドーピングされた半導体層の成長方向に対し平行となる面で接触する前記金属電極と、前記半導体光吸収層とが、前記第二の不純物がドーピングされた半導体層の成長方向に垂直な面で接触していないことを特徴とする請求項1に記載の半導体受光素子。
- 前記第一の不純物がp型の不純物である場合、前記第二の不純物がn型の不純物であり、
前記第一の不純物がn型の不純物である場合、前記第二の不純物がp型の不純物である請求項1又は請求項2に記載の半導体受光素子。 - 前記ミラー膜と前記金属電極が接触していることを特徴とする請求項1乃至3いずれか一項に記載の半導体受光素子。
- 金属を含むミラー膜と、前記金属電極と接触する前記半導体光吸収層又は前記第二の不純物がドーピングされた半導体層とが、接触しないことを特徴とする請求項4に記載の半導体受光素子。
- 前記半導体光吸収層と前記金属電極との間に、絶縁層が形成されていることを特徴とする請求項1乃至5いずれか一項に記載の半導体受光素子。
- 前記ミラー膜と前記金属電極と接する前記第二の不純物がドーピングされた半導体層との間に、絶縁層が形成されていることを特徴とする請求項4又は請求項5いずれか一項に記載の半導体受光素子。
- 前記金属電極が、Ti、Pt、及びAuを含むことを特徴とする請求項1乃至7いずれか一項に記載の半導体受光素子。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019073929A JP7147669B2 (ja) | 2019-04-09 | 2019-04-09 | 半導体受光素子 |
CA3134560A CA3134560A1 (en) | 2019-04-09 | 2020-04-07 | Semiconductor light receiving element |
US17/440,666 US20220158008A1 (en) | 2019-04-09 | 2020-04-07 | Semiconductor Light Receiving Element |
PCT/JP2020/015616 WO2020209243A1 (ja) | 2019-04-09 | 2020-04-07 | 半導体受光素子 |
EP20788490.9A EP3955321A4 (en) | 2019-04-09 | 2020-04-07 | SOLID STATE LIGHT RECEIVING ELEMENT |
CN202080027577.5A CN113678266A (zh) | 2019-04-09 | 2020-04-07 | 半导体受光元件 |
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JP2019073929A JP7147669B2 (ja) | 2019-04-09 | 2019-04-09 | 半導体受光素子 |
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JP2020174079A JP2020174079A (ja) | 2020-10-22 |
JP2020174079A5 JP2020174079A5 (ja) | 2021-11-04 |
JP7147669B2 true JP7147669B2 (ja) | 2022-10-05 |
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US (1) | US20220158008A1 (ja) |
EP (1) | EP3955321A4 (ja) |
JP (1) | JP7147669B2 (ja) |
CN (1) | CN113678266A (ja) |
CA (1) | CA3134560A1 (ja) |
WO (1) | WO2020209243A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002151730A (ja) | 2000-11-14 | 2002-05-24 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
JP2003023174A (ja) | 2001-07-09 | 2003-01-24 | Matsushita Electric Ind Co Ltd | アバランシェフォトダイオード |
US20030226952A1 (en) | 2002-06-07 | 2003-12-11 | Clark William R. | Three-terminal avalanche photodiode |
JP2010056504A (ja) | 2008-07-31 | 2010-03-11 | Rohm Co Ltd | 半導体素子 |
JP2011187607A (ja) | 2010-03-08 | 2011-09-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05275732A (ja) * | 1992-03-25 | 1993-10-22 | Sumitomo Electric Ind Ltd | 受光素子及びその製造方法 |
JPH0964407A (ja) * | 1995-06-14 | 1997-03-07 | Nec Corp | 半導体受光素子 |
JP2007335753A (ja) * | 2006-06-16 | 2007-12-27 | Sumitomo Electric Ind Ltd | 半導体受光素子、その製造方法および受光装置 |
JP5294558B2 (ja) * | 2006-12-19 | 2013-09-18 | 三菱電機株式会社 | 埋込導波路型受光素子とその製造方法 |
WO2012073539A1 (ja) * | 2010-12-01 | 2012-06-07 | 住友電気工業株式会社 | 受光素子、検出装置、半導体エピタキシャルウエハ、およびこれらの製造方法 |
JP5636604B2 (ja) * | 2012-06-29 | 2014-12-10 | 住友電工デバイス・イノベーション株式会社 | 半導体受光素子 |
CN106098836B (zh) * | 2016-08-19 | 2017-11-03 | 武汉华工正源光子技术有限公司 | 通讯用雪崩光电二极管及其制备方法 |
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2019
- 2019-04-09 JP JP2019073929A patent/JP7147669B2/ja active Active
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2020
- 2020-04-07 CN CN202080027577.5A patent/CN113678266A/zh active Pending
- 2020-04-07 EP EP20788490.9A patent/EP3955321A4/en active Pending
- 2020-04-07 WO PCT/JP2020/015616 patent/WO2020209243A1/ja unknown
- 2020-04-07 CA CA3134560A patent/CA3134560A1/en active Pending
- 2020-04-07 US US17/440,666 patent/US20220158008A1/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002151730A (ja) | 2000-11-14 | 2002-05-24 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
JP2003023174A (ja) | 2001-07-09 | 2003-01-24 | Matsushita Electric Ind Co Ltd | アバランシェフォトダイオード |
US20030226952A1 (en) | 2002-06-07 | 2003-12-11 | Clark William R. | Three-terminal avalanche photodiode |
JP2010056504A (ja) | 2008-07-31 | 2010-03-11 | Rohm Co Ltd | 半導体素子 |
JP2011187607A (ja) | 2010-03-08 | 2011-09-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体受光素子 |
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Publication number | Publication date |
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US20220158008A1 (en) | 2022-05-19 |
CN113678266A (zh) | 2021-11-19 |
EP3955321A1 (en) | 2022-02-16 |
CA3134560A1 (en) | 2020-10-15 |
EP3955321A4 (en) | 2022-12-14 |
JP2020174079A (ja) | 2020-10-22 |
WO2020209243A1 (ja) | 2020-10-15 |
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