JP7140780B2 - アレイ基板及びその製造方法、表示装置 - Google Patents

アレイ基板及びその製造方法、表示装置 Download PDF

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JP7140780B2
JP7140780B2 JP2019561891A JP2019561891A JP7140780B2 JP 7140780 B2 JP7140780 B2 JP 7140780B2 JP 2019561891 A JP2019561891 A JP 2019561891A JP 2019561891 A JP2019561891 A JP 2019561891A JP 7140780 B2 JP7140780 B2 JP 7140780B2
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thin film
buffer layer
base substrate
film transistor
layer
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JP2021506098A (ja
JP2021506098A5 (enExample
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ポンフェイ グー
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2019561891A 2017-12-04 2018-10-24 アレイ基板及びその製造方法、表示装置 Active JP7140780B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201711266313.1 2017-12-04
CN201711266313.1A CN108039351B (zh) 2017-12-04 2017-12-04 一种阵列基板及其制备方法、显示装置
PCT/CN2018/111710 WO2019109748A1 (zh) 2017-12-04 2018-10-24 阵列基板及其制备方法、显示装置

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JP2021506098A JP2021506098A (ja) 2021-02-18
JP2021506098A5 JP2021506098A5 (enExample) 2021-11-25
JP7140780B2 true JP7140780B2 (ja) 2022-09-21

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US (1) US11133366B2 (enExample)
EP (1) EP3723130A4 (enExample)
JP (1) JP7140780B2 (enExample)
CN (1) CN108039351B (enExample)
WO (1) WO2019109748A1 (enExample)

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CN108039351B (zh) * 2017-12-04 2021-01-26 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
KR102612577B1 (ko) * 2018-08-13 2023-12-08 엘지디스플레이 주식회사 박막 트랜지스터 기판, 쉬프트 레지스터 및 표시장치
CN109659347B (zh) * 2018-12-19 2021-02-26 武汉华星光电半导体显示技术有限公司 柔性oled显示面板以及显示装置
CN110416232B (zh) * 2019-08-22 2021-11-12 合肥鑫晟光电科技有限公司 阵列基板及其制作方法、显示面板和显示装置
KR102853446B1 (ko) * 2019-10-11 2025-09-02 삼성디스플레이 주식회사 표시 장치와 그의 제조 방법
CN111725324B (zh) 2020-06-11 2021-11-02 武汉华星光电半导体显示技术有限公司 薄膜晶体管、阵列基板及其制造方法
CN112259612B (zh) * 2020-10-23 2024-07-05 合肥鑫晟光电科技有限公司 显示基板及其制作方法、显示装置
CN112768497B (zh) * 2021-01-07 2022-08-23 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制备方法、显示面板
US12250853B2 (en) * 2021-10-25 2025-03-11 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display device with connected shielding layer and gate electrode layer and manufacturing method thereof
KR20230073405A (ko) * 2021-11-18 2023-05-26 삼성디스플레이 주식회사 표시 장치
KR20230074364A (ko) 2021-11-19 2023-05-30 삼성디스플레이 주식회사 박막트랜지스터, 박막트랜지스터 어레이 기판 및 박막트랜지스터의 제조 방법
CN115472665A (zh) * 2022-10-27 2022-12-13 合肥鑫晟光电科技有限公司 一种显示基板及其制备方法、显示装置

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US20150379923A1 (en) 2014-06-25 2015-12-31 Lg Display Co., Ltd. Thin film transistor substrate, display panel including the same, and method of manufacturing the same
WO2017159613A1 (ja) 2016-03-15 2017-09-21 シャープ株式会社 アクティブマトリクス基板

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KR101108176B1 (ko) 2010-07-07 2012-01-31 삼성모바일디스플레이주식회사 더블 게이트형 박막 트랜지스터 및 이를 구비한 유기 발광 표시 장치
KR102001057B1 (ko) 2012-10-31 2019-07-18 엘지디스플레이 주식회사 어레이 기판의 제조방법
CN102955312B (zh) 2012-11-14 2015-05-20 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
JP6506545B2 (ja) * 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
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KR102369301B1 (ko) * 2015-02-13 2022-03-03 삼성디스플레이 주식회사 유기 발광 디스플레이 장치와, 이의 제조 방법
KR102410594B1 (ko) 2015-04-30 2022-06-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이를 구비하는 표시 패널
CN105070727B (zh) 2015-08-21 2019-01-15 京东方科技集团股份有限公司 一种薄膜晶体管阵列基板、其制作方法及显示装置
CN105140298B (zh) * 2015-09-24 2018-08-07 武汉华星光电技术有限公司 薄膜晶体管和阵列基板
CN108039351B (zh) * 2017-12-04 2021-01-26 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置

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US20150379923A1 (en) 2014-06-25 2015-12-31 Lg Display Co., Ltd. Thin film transistor substrate, display panel including the same, and method of manufacturing the same
WO2017159613A1 (ja) 2016-03-15 2017-09-21 シャープ株式会社 アクティブマトリクス基板

Also Published As

Publication number Publication date
CN108039351A (zh) 2018-05-15
EP3723130A1 (en) 2020-10-14
WO2019109748A1 (zh) 2019-06-13
EP3723130A4 (en) 2021-09-01
JP2021506098A (ja) 2021-02-18
US20200411624A1 (en) 2020-12-31
CN108039351B (zh) 2021-01-26
US11133366B2 (en) 2021-09-28

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