JP2021506098A - アレイ基板及びその製造方法、表示装置 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 160
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 125
- 239000001301 oxygen Substances 0.000 claims abstract description 125
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 125
- 230000004888 barrier function Effects 0.000 claims abstract description 75
- 239000010410 layer Substances 0.000 claims description 210
- 238000000034 method Methods 0.000 claims description 48
- 230000008569 process Effects 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000000059 patterning Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000011229 interlayer Substances 0.000 claims description 10
- 238000000206 photolithography Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 18
- 230000000694 effects Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
S101:ベース基板10に、第1バッファ層20、酸素バリアパターン301及び第2バッファ層40を順次形成する。
S1022:酸化物半導体層50に絶縁薄膜と金属薄膜を順次形成し、そして絶縁薄膜と金属薄膜に対して同一回フォトリソグラフィプロセスによるパターニングを行い、形状とサイズが同じのゲート絶縁層60とゲート金属層70を形成する。
S1023:層間誘電体層80を形成し、そしてパターニングプロセスにより層間誘電体層80に複数のビアを形成する。
S1024:ソース・ドレイン金属層90を形成し、そしてパターニングプロセスにより、複数のソース91のパターン及び複数のドレイン92のパターンを形成し;複数のソース91のうちの1つと複数のドレイン92のうちの1つを、それぞれ異なるビアを介して活性層51に電気的に接続させ、第1薄膜トランジスタA及び第2薄膜トランジスタBを取得する。
Claims (12)
- ベース基板と、前記ベース基板に順次形成された第1バッファ層、酸素バリアパターン及び第2バッファ層と、前記第2バッファ層に形成された第1薄膜トランジスタ及び第2薄膜トランジスタとを備え、
前記酸素バリアパターンは、互いに絶縁すると共に離間して形成された複数の酸素バリア部を有し;前記第1薄膜トランジスタの活性層の、ソースとドレインとの間に位置する部分の前記ベース基板における正投影は、複数の前記酸素バリア部のうちの1つの、前記ベース基板における正投影の範囲内に収まり、
前記第1バッファ層の酸素含有量は、前記第2バッファ層の酸素含有量より高い、
アレイ基板。 - 前記第1薄膜トランジスタは、トップゲート型薄膜トランジスタであり、
前記第1薄膜トランジスタの活性層の前記ベース基板における正投影は、複数の前記酸素バリア部のうちの1つの前記ベース基板における正投影の範囲内に収まる、
請求項1に記載のアレイ基板。 - 前記酸素バリア部を構成する材料は、導電性材料であり、
前記第1薄膜トランジスタのソースは、前記酸素バリア部に電気的に接続される、
請求項2に記載のアレイ基板。 - 前記第2薄膜トランジスタは、トップゲート型薄膜トランジスタであり、
前記アレイ基板は、前記ベース基板と前記第1バッファ層との間に位置する遮光パターンをさらに備え、
前記遮光パターンは、互いに絶縁すると共に離間して形成された複数の遮光部を有し;前記第2薄膜トランジスタの活性層の、ソースとドレインとの間に位置する部分の前記ベース基板における正投影は、複数の前記遮光部のうちの1つの、前記ベース基板における正投影の範囲内に収まる、
請求項1に記載のアレイ基板。 - 前記遮光部を構成する材料は、導電性材料であり、
前記第2薄膜トランジスタのソースは、前記遮光部に電気的に接続される、
請求項4に記載のアレイ基板。 - 前記酸素バリア部を構成する材料は遮光性材料である、
請求項1に記載のアレイ基板。 - 前記酸素バリアパターンは、積層形成された少なくとも2つの薄膜層を含む、
請求項1に記載のアレイ基板。 - 前記第1薄膜トランジスタは、駆動薄膜トランジスタであり、前記第2薄膜トランジスタは、スイッチング薄膜トランジスタである、
請求項1〜7のいずれかに記載のアレイ基板。 - 請求項1〜8のいずれかに記載のアレイ基板を備える表示装置。
- 前記ベース基板に、前記第1バッファ層、前記酸素バリアパターン及び前記第2バッファ層を順次形成する工程であって、前記第1バッファ層の酸素含有量は、前記第2バッファ層の酸素含有量より高く、前記酸素バリアパターンは、互いに絶縁すると共に離間して形成される複数の前記酸素バリア部を含む、工程と、
前記第2バッファ層が形成された前記ベース基板に、前記第1薄膜トランジスタ及び前記第2薄膜トランジスタを形成する工程であって、前記第1薄膜トランジスタの活性層の、ソースとドレインとの間に位置する部分の前記ベース基板における正投影は、複数の前記酸素バリア部のうちの1つの、前記ベース基板における正投影の範囲内に収まるようにする、工程とを含む、
請求項1〜8のいずれかに記載のアレイ基板の製造方法。 - 前記第2バッファ層が形成された前記ベース基板に、前記第1薄膜トランジスタ及び前記第2薄膜トランジスタを作製する工程は、
前記第2バッファ層に酸化物半導体層を形成し、そしてパターニングプロセスにより複数の活性層のパターンを形成するステップと、
前記酸化物半導体層に絶縁薄膜と金属薄膜を順次形成し、そして前記絶縁薄膜と金属薄膜に対して同一回フォトリソグラフィプロセスでパターニングし、形状とサイズが同じのゲート絶縁層とゲート金属層を形成するステップと、
層間誘電体層を形成し、そしてパターニングプロセスにより前記層間誘電体層に複数のビアを形成するステップと、
ソース・ドレイン金属層を形成し、そしてパターニングプロセスにより、複数のソースのパターン及び複数のドレインのパターンを形成するステップであって、複数の前記ソースのうちの1つと前記複数の前記ドレインのうちの1つを、それぞれ異なる前記ビアを介して前記活性層に電気的に接続させる、ステップとを有する、
請求項10に記載のアレイ基板の製造方法。 - 前記第2バッファ層に前記酸化物半導体層を形成した後、前記製造方法は、アニーリング又は加温プロセスをさらに含む、
及び/又は、ゲート絶縁層及びゲート金属層を形成した後、前記製造方法は、アニーリング又は加温プロセスをさらに含む、
及び/又は、前記第1薄膜トランジスタ及び前記第2薄膜トランジスタを作製した後、前記製造方法は、アニーリング又は加温プロセスをさらに含む、
請求項11に記載のアレイ基板の製造方法。
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CN201711266313.1 | 2017-12-04 | ||
PCT/CN2018/111710 WO2019109748A1 (zh) | 2017-12-04 | 2018-10-24 | 阵列基板及其制备方法、显示装置 |
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CN108039351B (zh) * | 2017-12-04 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
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US11133366B2 (en) | 2021-09-28 |
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