JP7134077B2 - 半導体装置および電子装置 - Google Patents

半導体装置および電子装置 Download PDF

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JP7134077B2
JP7134077B2 JP2018219901A JP2018219901A JP7134077B2 JP 7134077 B2 JP7134077 B2 JP 7134077B2 JP 2018219901 A JP2018219901 A JP 2018219901A JP 2018219901 A JP2018219901 A JP 2018219901A JP 7134077 B2 JP7134077 B2 JP 7134077B2
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terminals
region
wiring board
semiconductor chip
wiring
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JP2020088139A (ja
JP2020088139A5 (enExample
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義隆 岡安
修一 仮屋崎
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2018219901A priority Critical patent/JP7134077B2/ja
Priority to US16/653,098 priority patent/US11101206B2/en
Priority to CN201911158381.5A priority patent/CN111223836B/zh
Publication of JP2020088139A publication Critical patent/JP2020088139A/ja
Publication of JP2020088139A5 publication Critical patent/JP2020088139A5/ja
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
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    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/161—Cap
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    • H01L2924/3511—Warping

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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
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WO2016103359A1 (ja) * 2014-12-24 2016-06-30 ルネサスエレクトロニクス株式会社 半導体装置
US10043755B2 (en) * 2015-06-26 2018-08-07 Renesas Electronics Corporation Electronic device
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