JP7122119B2 - 発光ダイオード - Google Patents

発光ダイオード Download PDF

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Publication number
JP7122119B2
JP7122119B2 JP2018017456A JP2018017456A JP7122119B2 JP 7122119 B2 JP7122119 B2 JP 7122119B2 JP 2018017456 A JP2018017456 A JP 2018017456A JP 2018017456 A JP2018017456 A JP 2018017456A JP 7122119 B2 JP7122119 B2 JP 7122119B2
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Japan
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layer
type
type layer
light emitting
light
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JP2018017456A
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English (en)
Japanese (ja)
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JP2018201009A (ja
Inventor
旭 鵜沢
則善 瀬尾
篤 松村
範行 粟飯原
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昭和電工光半導体株式会社
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Priority to TW107116194A priority Critical patent/TWI673889B/zh
Priority to KR1020180055190A priority patent/KR102000396B1/ko
Priority to US15/981,988 priority patent/US10439103B2/en
Priority to DE102018112228.4A priority patent/DE102018112228A1/de
Priority to CN201810501874.3A priority patent/CN108933186A/zh
Publication of JP2018201009A publication Critical patent/JP2018201009A/ja
Priority to US16/401,361 priority patent/US10693036B2/en
Application granted granted Critical
Publication of JP7122119B2 publication Critical patent/JP7122119B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP2018017456A 2017-05-25 2018-02-02 発光ダイオード Active JP7122119B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW107116194A TWI673889B (zh) 2017-05-25 2018-05-11 發光二極體及穿隧接合層之製造方法
KR1020180055190A KR102000396B1 (ko) 2017-05-25 2018-05-15 발광 다이오드 및 터널 접합층의 제조 방법
US15/981,988 US10439103B2 (en) 2017-05-25 2018-05-17 Light-emitting diode and method for manufacturing tunnel junction layer
DE102018112228.4A DE102018112228A1 (de) 2017-05-25 2018-05-22 Lichtemissionsdiode und Verfahren zum Herstellen einer Tunnelkontakschicht
CN201810501874.3A CN108933186A (zh) 2017-05-25 2018-05-23 发光二极管和隧道结层的制造方法
US16/401,361 US10693036B2 (en) 2017-05-25 2019-05-02 Method for manufacturing tunnel junction layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017103197 2017-05-25
JP2017103197 2017-05-25

Publications (2)

Publication Number Publication Date
JP2018201009A JP2018201009A (ja) 2018-12-20
JP7122119B2 true JP7122119B2 (ja) 2022-08-19

Family

ID=64668397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018017456A Active JP7122119B2 (ja) 2017-05-25 2018-02-02 発光ダイオード

Country Status (3)

Country Link
JP (1) JP7122119B2 (ko)
KR (1) KR102000396B1 (ko)
TW (1) TWI673889B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020167373A (ja) * 2019-03-28 2020-10-08 ウシオオプトセミコンダクター株式会社 赤外ｌｅｄ素子
WO2020196739A1 (ja) * 2019-03-28 2020-10-01 ウシオオプトセミコンダクター株式会社 赤外ｌｅｄ素子
JP7201574B2 (ja) * 2019-12-05 2023-01-10 ウシオ電機株式会社 赤外ｌｅｄ素子
JP7309920B2 (ja) * 2020-02-19 2023-07-18 天津三安光電有限公司 多接合ｌｅｄのトンネル接合、多接合ｌｅｄ、及びその製作方法
JPWO2022196374A1 (ko) * 2021-03-18 2022-09-22
JP7344434B2 (ja) * 2021-09-10 2023-09-14 日亜化学工業株式会社 発光素子の製造方法
CN113611595B (zh) * 2021-10-09 2021-12-21 材料科学姑苏实验室 一种半导体结构及其制备方法
JP7397348B2 (ja) * 2021-11-22 2023-12-13 日亜化学工業株式会社 発光素子
WO2024076160A1 (ko) * 2022-10-05 2024-04-11 엘지전자 주식회사 디스플레이 화소용 적색 반도체 발광소자 및 이를 포함하는 디스플레이 장치

Citations (11)

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JP2002050790A (ja) 2000-08-04 2002-02-15 Hitachi Cable Ltd 化合物半導体発光ダイオードアレイ
WO2002023640A1 (en) 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
JP2004128502A (ja) 2002-09-30 2004-04-22 Lumileds Lighting Us Llc トンネル接合を含む発光装置
JP2004336039A (ja) 2003-04-30 2004-11-25 Agilent Technol Inc トンネル接合構造を組み込んだＧａＡｓベースの長波長レーザ
JP2007311632A (ja) 2006-05-19 2007-11-29 Furukawa Electric Co Ltd:The 面発光レーザ素子
JP2008235878A (ja) 2007-02-19 2008-10-02 Showa Denko Kk 太陽電池及びその製造方法
JP2011192913A (ja) 2010-03-16 2011-09-29 Denso Corp 半導体レーザ構造
JP2011198931A (ja) 2010-03-18 2011-10-06 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2012521090A (ja) 2009-03-16 2012-09-10 ザ・ボーイング・カンパニー 太陽電池内のトンネル接合の高濃度ドープ層
JP2013197485A (ja) 2012-03-22 2013-09-30 Sharp Corp エピタキシャル基板及びこれを用いた半導体素子の製造方法
JP2014229743A (ja) 2013-05-22 2014-12-08 株式会社デンソー 半導体レーザ

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JPS6437060A (en) * 1987-08-03 1989-02-07 Nippon Telegraph & Telephone Semiconductor element
KR100380536B1 (ko) * 2000-09-14 2003-04-23 주식회사 옵토웰 터널접합 구조를 가지는 질화물반도체 발광소자
US7095052B2 (en) * 2004-10-22 2006-08-22 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Method and structure for improved LED light output
DE102006039369A1 (de) 2005-12-30 2007-07-05 Osram Opto Semiconductors Gmbh LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
JP4884810B2 (ja) 2006-03-17 2012-02-29 古河電気工業株式会社 半導体発光素子及びその製造方法
DE102006046037B4 (de) * 2006-09-28 2024-05-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
KR100887050B1 (ko) * 2007-12-06 2009-03-04 삼성전기주식회사 질화물 반도체 소자
DE102008056371A1 (de) * 2008-11-07 2010-05-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TWI555226B (zh) * 2011-07-12 2016-10-21 晶元光電股份有限公司 具有多層發光疊層的發光元件
KR101978632B1 (ko) * 2011-12-15 2019-09-03 엘지이노텍 주식회사 발광소자
CN103999188B (zh) * 2011-12-23 2017-02-22 索泰克公司 用于光敏器件的稀释氮化物材料的形成方法及相关结构体
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002050790A (ja) 2000-08-04 2002-02-15 Hitachi Cable Ltd 化合物半導体発光ダイオードアレイ
WO2002023640A1 (en) 2000-09-14 2002-03-21 Optowell Co., Ltd. Nitride compound semiconductor light emitting device having a tunnel junction structure and fabrication method thereof
JP2004128502A (ja) 2002-09-30 2004-04-22 Lumileds Lighting Us Llc トンネル接合を含む発光装置
JP2004336039A (ja) 2003-04-30 2004-11-25 Agilent Technol Inc トンネル接合構造を組み込んだＧａＡｓベースの長波長レーザ
JP2007311632A (ja) 2006-05-19 2007-11-29 Furukawa Electric Co Ltd:The 面発光レーザ素子
JP2008235878A (ja) 2007-02-19 2008-10-02 Showa Denko Kk 太陽電池及びその製造方法
JP2012521090A (ja) 2009-03-16 2012-09-10 ザ・ボーイング・カンパニー 太陽電池内のトンネル接合の高濃度ドープ層
JP2011192913A (ja) 2010-03-16 2011-09-29 Denso Corp 半導体レーザ構造
JP2011198931A (ja) 2010-03-18 2011-10-06 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子の製造方法
JP2013197485A (ja) 2012-03-22 2013-09-30 Sharp Corp エピタキシャル基板及びこれを用いた半導体素子の製造方法
JP2014229743A (ja) 2013-05-22 2014-12-08 株式会社デンソー 半導体レーザ

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Title
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Also Published As

Publication number Publication date
TWI673889B (zh) 2019-10-01
JP2018201009A (ja) 2018-12-20
KR102000396B1 (ko) 2019-07-15
TW201901982A (zh) 2019-01-01
KR20180129648A (ko) 2018-12-05

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