JP7111457B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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JP7111457B2
JP7111457B2 JP2017208586A JP2017208586A JP7111457B2 JP 7111457 B2 JP7111457 B2 JP 7111457B2 JP 2017208586 A JP2017208586 A JP 2017208586A JP 2017208586 A JP2017208586 A JP 2017208586A JP 7111457 B2 JP7111457 B2 JP 7111457B2
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layer
opening
wiring
conductive paste
barrier layer
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JP2019083234A5 (enExample
JP2019083234A (ja
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圭吾 佐藤
浩志 種子田
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2017208586A priority Critical patent/JP7111457B2/ja
Priority to US16/138,252 priority patent/US10593621B2/en
Publication of JP2019083234A publication Critical patent/JP2019083234A/ja
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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
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WO2018172098A1 (en) * 2017-03-23 2018-09-27 Imec Vzw Methods for forming metal electrodes concurrently on silicon regions of opposite polarity
CN111146170A (zh) * 2019-12-30 2020-05-12 颀中科技（苏州）有限公司 封装结构及其成型方法
JP7548743B2 (ja) * 2020-07-21 2024-09-10 新光電気工業株式会社 半導体装置
JP7516230B2 (ja) * 2020-12-03 2024-07-16 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
CN115881655A (zh) * 2023-02-16 2023-03-31 成都频岢微电子有限公司 一种射频前端模组封装工艺结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288959A (ja) 2003-03-24 2004-10-14 Matsushita Electric Ind Co Ltd 電子回路装置およびその製造方法
JP2014143305A (ja) 2013-01-24 2014-08-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の実装構造および半導体装置の製造方法
JP2016042536A (ja) 2014-08-18 2016-03-31 富士通株式会社 半導体装置及び半導体装置の製造方法
WO2016139794A1 (ja) 2015-03-05 2016-09-09 オリンパス株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226421A (ja) * 1994-02-09 1995-08-22 Toshiba Corp Ｉｃ素子実装回路装置およびｉｃ素子の実装方法
JP3876953B2 (ja) * 1998-03-27 2007-02-07 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
WO2010003732A2 (de) * 2008-07-09 2010-01-14 Robert Bosch Gmbh Magnetischer positionssensor
US8884159B2 (en) * 2011-09-14 2014-11-11 International Business Machines Corporation Photovoltaic devices with metal semiconductor alloy metallization
JP6555907B2 (ja) * 2015-03-16 2019-08-07 アルパッド株式会社 半導体発光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004288959A (ja) 2003-03-24 2004-10-14 Matsushita Electric Ind Co Ltd 電子回路装置およびその製造方法
JP2014143305A (ja) 2013-01-24 2014-08-07 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の実装構造および半導体装置の製造方法
JP2016042536A (ja) 2014-08-18 2016-03-31 富士通株式会社 半導体装置及び半導体装置の製造方法
WO2016139794A1 (ja) 2015-03-05 2016-09-09 オリンパス株式会社 半導体装置および半導体装置の製造方法

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