JP2019083234A5 - - Google Patents

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Publication number
JP2019083234A5
JP2019083234A5 JP2017208586A JP2017208586A JP2019083234A5 JP 2019083234 A5 JP2019083234 A5 JP 2019083234A5 JP 2017208586 A JP2017208586 A JP 2017208586A JP 2017208586 A JP2017208586 A JP 2017208586A JP 2019083234 A5 JP2019083234 A5 JP 2019083234A5
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JP
Japan
Prior art keywords
opening
barrier layer
semiconductor device
layer
wiring
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JP2017208586A
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English (en)
Japanese (ja)
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JP7111457B2 (ja
JP2019083234A (ja
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Priority to JP2017208586A priority Critical patent/JP7111457B2/ja
Priority claimed from JP2017208586A external-priority patent/JP7111457B2/ja
Priority to US16/138,252 priority patent/US10593621B2/en
Publication of JP2019083234A publication Critical patent/JP2019083234A/ja
Publication of JP2019083234A5 publication Critical patent/JP2019083234A5/ja
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JP2017208586A 2017-10-27 2017-10-27 半導体装置及びその製造方法 Active JP7111457B2 (ja)

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Application Number Priority Date Filing Date Title
JP2017208586A JP7111457B2 (ja) 2017-10-27 2017-10-27 半導体装置及びその製造方法
US16/138,252 US10593621B2 (en) 2017-10-27 2018-09-21 Semiconductor device with barrier layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017208586A JP7111457B2 (ja) 2017-10-27 2017-10-27 半導体装置及びその製造方法

Publications (3)

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JP2019083234A JP2019083234A (ja) 2019-05-30
JP2019083234A5 true JP2019083234A5 (enExample) 2020-09-10
JP7111457B2 JP7111457B2 (ja) 2022-08-02

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JP2017208586A Active JP7111457B2 (ja) 2017-10-27 2017-10-27 半導体装置及びその製造方法

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US (1) US10593621B2 (enExample)
JP (1) JP7111457B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11018272B2 (en) * 2017-03-23 2021-05-25 Imec Vzw Methods for forming metal electrodes concurrently on silicon regions of opposite polarity
CN111146170A (zh) * 2019-12-30 2020-05-12 颀中科技(苏州)有限公司 封装结构及其成型方法
JP7548743B2 (ja) * 2020-07-21 2024-09-10 新光電気工業株式会社 半導体装置
JP7516230B2 (ja) * 2020-12-03 2024-07-16 新光電気工業株式会社 半導体装置及び半導体装置の製造方法
CN115881655A (zh) * 2023-02-16 2023-03-31 成都频岢微电子有限公司 一种射频前端模组封装工艺结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07226421A (ja) * 1994-02-09 1995-08-22 Toshiba Corp Ic素子実装回路装置およびic素子の実装方法
JP3876953B2 (ja) * 1998-03-27 2007-02-07 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
JP4123998B2 (ja) 2003-03-24 2008-07-23 松下電器産業株式会社 電子回路装置およびその製造方法
WO2010003732A2 (de) * 2008-07-09 2010-01-14 Robert Bosch Gmbh Magnetischer positionssensor
US8884159B2 (en) * 2011-09-14 2014-11-11 International Business Machines Corporation Photovoltaic devices with metal semiconductor alloy metallization
JP5894092B2 (ja) 2013-01-24 2016-03-23 日本電信電話株式会社 半導体装置の実装構造および半導体装置の製造方法
JP6365106B2 (ja) 2014-08-18 2018-08-01 富士通株式会社 半導体装置及び半導体装置の製造方法
JPWO2016139794A1 (ja) 2015-03-05 2017-12-21 オリンパス株式会社 半導体装置および半導体装置の製造方法
JP6555907B2 (ja) * 2015-03-16 2019-08-07 アルパッド株式会社 半導体発光装置

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