JP7101885B2 - パワー半導体モジュール及び電力変換装置 - Google Patents
パワー半導体モジュール及び電力変換装置 Download PDFInfo
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Description
図1から図12を参照して、実施の形態1のパワー半導体モジュール1を説明する。図1に示されるように、パワー半導体モジュール1は、絶縁回路基板10と、半導体素子15と、少なくとも一つの導電ワイヤ20と、第1樹脂部材30と、第2樹脂部材33と、第3樹脂部材40とを主に備える。パワー半導体モジュール1は、ヒートシンク37をさらに備えてもよい。パワー半導体モジュール1は、外囲体38をさらに備えてもよい。
本実施の形態のパワー半導体モジュール1は、半導体素子15と、少なくとも一つの導電ワイヤ20と、第1樹脂部材30と、第2樹脂部材33と、第3樹脂部材40とを備える。半導体素子15は、前面電極17を含む。少なくとも一つの導電ワイヤ20は、接合部21において、前面電極17に接合されている。第3樹脂部材40は、半導体素子15と、第1樹脂部材30と、第2樹脂部材33とを封止する。第1樹脂部材30は、前面電極17の第1表面17aと、導電ワイヤ20の第2表面20aとに沿って延在しており、かつ、導電ワイヤ20の長手方向における接合部21の両端部21p,21qの少なくとも一つで屈曲している。第1表面17aは、接合部21の両端部21p,21qの少なくとも一つに接続されており、かつ、導電ワイヤ20に対向している。第2表面20aは、接合部21の両端部21p,21qの少なくとも一つに接続されており、かつ、前面電極17に対向している。第1樹脂部材30は、接合部21の両端部21p,21qの少なくとも一つと、第1表面17aと、第2表面20aとを覆っている。第2樹脂部材33は、第1樹脂部材30の屈曲部31を覆っている。第1樹脂部材30の第1破断伸び率は、第2樹脂部材33の第2破断伸び率よりも高い。第1樹脂部材30の第1破断強度は、第2樹脂部材33の第2破断強度よりも高い。第2樹脂部材33の第2引張弾性率は、第1樹脂部材30の第1引張弾性率よりも高い。
図13から図15、図19から図21及び図25から図27を参照して、実施の形態2のパワー半導体モジュール1bを説明する。本実施の形態のパワー半導体モジュール1bは、実施の形態1のパワー半導体モジュール1と同様の構成を備えているが、主に以下の点で異なっている。
図28及び図29を参照して、実施の形態3のパワー半導体モジュール1cを説明する。本実施の形態のパワー半導体モジュール1cは、実施の形態2のパワー半導体モジュール1bと同様の構成を備えているが、くぼみ42の形状の点で主に異なっている。
本実施の形態は、実施の形態1から実施の形態3のパワー半導体モジュール1,1b,1cのいずれかを電力変換装置に適用したものである。本実施の形態の電力変換装置200が、特に限定されるものではないが、三相のインバータである場合について以下説明する。
Claims (15)
- 前面電極を含む半導体素子と、
接合部において前記前面電極に接合されている少なくとも一つの導電ワイヤと、
第1樹脂部材と、
第2樹脂部材と、
前記半導体素子と前記第1樹脂部材と前記第2樹脂部材とを封止する第3樹脂部材とを備え、
前記第1樹脂部材は、前記前面電極の第1表面と、前記導電ワイヤの第2表面とに沿って延在しており、かつ、前記導電ワイヤの長手方向における前記接合部の両端部の少なくとも一つで屈曲しており、前記第1表面は、前記接合部の前記両端部の前記少なくとも一つに接続されており、かつ、前記導電ワイヤに対向しており、前記第2表面は、前記接合部の前記両端部の前記少なくとも一つに接続されており、かつ、前記前面電極に対向しており、
前記第1樹脂部材は、前記接合部の前記両端部の前記少なくとも一つと、前記第1表面と、前記第2表面とを覆っており、
前記第2樹脂部材は、前記第1樹脂部材の屈曲部を覆っており、
前記第1樹脂部材の第1破断伸び率は、前記第2樹脂部材の第2破断伸び率よりも高く、
前記第1樹脂部材の第1破断強度は、前記第2樹脂部材の第2破断強度よりも高く、
前記第2樹脂部材の第2引張弾性率は、前記第1樹脂部材の第1引張弾性率よりも高い、パワー半導体モジュール。 - 前記第3樹脂部材の第3引張弾性率は、前記第1樹脂部材の前記第1引張弾性率及び前記第2樹脂部材の前記第2引張弾性率よりも低い、請求項1に記載のパワー半導体モジュール。
- 前記第1樹脂部材の前記第1破断伸び率は20%以上であり、
前記第1樹脂部材の前記第1破断強度は100MPa以上である、請求項1または請求項2に記載のパワー半導体モジュール。 - 前記第2樹脂部材は、前記第1樹脂部材より高濃度のフィラーを含んでいる、請求項1から請求項3のいずれか一項に記載のパワー半導体モジュール。
- 前記第2樹脂部材の前記第2引張弾性率は、5GPa以上である、請求項1から請求項4のいずれか一項に記載のパワー半導体モジュール。
- 前記導電ワイヤの前記長手方向における、前記接合部の前記両端部の前記少なくとも一つと前記第1樹脂部材の前記屈曲部との間の距離は、150μm以下である、請求項1から請求項5のいずれか一項に記載のパワー半導体モジュール。
- 前記接合部の前記両端部の前記少なくとも一つは、前記接合部の前記両端部である、請求項1から請求項6のいずれか一項に記載のパワー半導体モジュール。
- 前記第1樹脂部材は、前記接合部のうち前記接合部の前記両端部を選択的に覆っている、請求項7に記載のパワー半導体モジュール。
- 前記第1表面と前記第2表面との間にある前記第2樹脂部材の頂部の前記第1表面からの最小高さは、前記接合部上の前記導電ワイヤの最小厚さの半分よりも大きい、請求項1から請求項8のいずれか一項に記載のパワー半導体モジュール。
- 前記導電ワイヤの第3表面上の前記第2樹脂部材の最大厚さは、前記接合部上の前記導電ワイヤの最大厚さの2倍以下であり、
前記第3表面は、前記接合部において前記前面電極に接触している前記導電ワイヤの第4表面とは反対側の表面である、請求項1から請求項9のいずれか一項に記載のパワー半導体モジュール。 - 前記少なくとも一つの導電ワイヤは、複数の導電ワイヤであり、
前記第1樹脂部材と前記第2樹脂部材とは、前記複数の導電ワイヤにまたがって形成されている、請求項1から請求項10のいずれか一項に記載のパワー半導体モジュール。 - 前記前面電極は、前記接合部の周囲にくぼみを有しており、
前記くぼみに、前記第1樹脂部材が充填されている、請求項1から請求項11のいずれか一項に記載のパワー半導体モジュール。 - 前記くぼみは、前記前面電極の平面視において、前記接合部を取り囲むように形成されている、請求項12に記載のパワー半導体モジュール。
- 前記くぼみは、開口と、底と、前記開口と前記底とを接続する側面とを有しており、
前記前面電極の平面視において、前記底または前記側面の少なくとも一部は、前記開口よりも前記接合部から離れた位置にある、請求項12に記載のパワー半導体モジュール。 - 請求項1から請求項14のいずれか一項に記載の前記パワー半導体モジュールを有し、かつ、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路とを備える、電力変換装置。
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