JP7023147B2 - 断熱構造体及び縦型熱処理装置 - Google Patents

断熱構造体及び縦型熱処理装置 Download PDF

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Publication number
JP7023147B2
JP7023147B2 JP2018045873A JP2018045873A JP7023147B2 JP 7023147 B2 JP7023147 B2 JP 7023147B2 JP 2018045873 A JP2018045873 A JP 2018045873A JP 2018045873 A JP2018045873 A JP 2018045873A JP 7023147 B2 JP7023147 B2 JP 7023147B2
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Prior art keywords
processing container
shaped member
opening
inner pipe
tube
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English (en)
Japanese (ja)
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JP2019161018A5 (enExample
JP2019161018A (ja
Inventor
弘治 吉井
達也 山口
寛之 林
充弘 岡田
聡 ▲高▼木
敏彦 高橋
正文 庄司
和也 北村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to JP2018045873A priority Critical patent/JP7023147B2/ja
Priority to KR1020190026315A priority patent/KR102414894B1/ko
Priority to US16/297,858 priority patent/US11424143B2/en
Priority to TW108107993A priority patent/TWI748167B/zh
Priority to CN201910184953.0A priority patent/CN110277334B/zh
Publication of JP2019161018A publication Critical patent/JP2019161018A/ja
Publication of JP2019161018A5 publication Critical patent/JP2019161018A5/ja
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    • H10P72/0431
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67303Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H01L21/67309Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
    • H10P72/04
    • H10P72/0402
    • H10P72/0434
    • H10P72/0436
    • H10P72/33
    • H10P72/70

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018045873A 2018-03-13 2018-03-13 断熱構造体及び縦型熱処理装置 Active JP7023147B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018045873A JP7023147B2 (ja) 2018-03-13 2018-03-13 断熱構造体及び縦型熱処理装置
KR1020190026315A KR102414894B1 (ko) 2018-03-13 2019-03-07 단열 구조체 및 종형 열 처리 장치
US16/297,858 US11424143B2 (en) 2018-03-13 2019-03-11 Heat insulation structure at lower end of vertical heat treatment apparatus and vertical heat treatment apparatus including heat insulation structure thereof
TW108107993A TWI748167B (zh) 2018-03-13 2019-03-11 絕熱構造體及縱型熱處理裝置
CN201910184953.0A CN110277334B (zh) 2018-03-13 2019-03-12 绝热构造体和立式热处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018045873A JP7023147B2 (ja) 2018-03-13 2018-03-13 断熱構造体及び縦型熱処理装置

Publications (3)

Publication Number Publication Date
JP2019161018A JP2019161018A (ja) 2019-09-19
JP2019161018A5 JP2019161018A5 (enExample) 2020-10-08
JP7023147B2 true JP7023147B2 (ja) 2022-02-21

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Family Applications (1)

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JP2018045873A Active JP7023147B2 (ja) 2018-03-13 2018-03-13 断熱構造体及び縦型熱処理装置

Country Status (5)

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US (1) US11424143B2 (enExample)
JP (1) JP7023147B2 (enExample)
KR (1) KR102414894B1 (enExample)
CN (1) CN110277334B (enExample)
TW (1) TWI748167B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019186335A (ja) * 2018-04-06 2019-10-24 東京エレクトロン株式会社 基板処理装置と基板処理方法
JP1700778S (ja) 2021-03-15 2021-11-29 基板処理装置用遮蔽具
KR102788333B1 (ko) * 2023-05-09 2025-03-31 주식회사 유진테크 공정 튜브 및 배치식 기판처리장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280375A (ja) 2001-03-21 2002-09-27 Hitachi Kokusai Electric Inc 基板処理装置
JP2002319546A (ja) 2001-04-23 2002-10-31 Hitachi Kokusai Electric Inc 半導体製造装置
JP2004119510A (ja) 2002-09-24 2004-04-15 Tokyo Electron Ltd 熱処理装置
JP2008172204A (ja) 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および加熱装置
JP2010283336A (ja) 2009-05-01 2010-12-16 Hitachi Kokusai Electric Inc 熱処理装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0536609A (ja) * 1991-08-01 1993-02-12 Mitsubishi Electric Corp 半導体製造装置
JP3907546B2 (ja) * 2002-07-25 2007-04-18 株式会社日立国際電気 縦型熱処理装置および半導体集積回路装置の製造方法
JP4907937B2 (ja) * 2005-09-26 2012-04-04 株式会社日立国際電気 断熱壁体、発熱体の保持構造体、加熱装置および基板処理装置
WO2008099449A1 (ja) * 2007-02-09 2008-08-21 Hitachi Kokusai Electric Inc. 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法
JP5593472B2 (ja) 2008-08-27 2014-09-24 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
JP5562188B2 (ja) 2010-09-16 2014-07-30 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5565242B2 (ja) * 2010-09-29 2014-08-06 東京エレクトロン株式会社 縦型熱処理装置
JP5134673B2 (ja) * 2010-10-29 2013-01-30 東京エレクトロン株式会社 貼り合わせ装置及び貼り合わせ方法
JP5702657B2 (ja) * 2011-04-18 2015-04-15 東京エレクトロン株式会社 熱処理装置
CN104520975B (zh) * 2012-07-30 2018-07-31 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法
JP5882167B2 (ja) * 2012-09-13 2016-03-09 東京エレクトロン株式会社 熱処理装置
CN105135883B (zh) * 2015-08-27 2018-03-23 北京矿冶研究总院 一种中频炉高温烧结用隔热工装
JP6616258B2 (ja) * 2016-07-26 2019-12-04 株式会社Kokusai Electric 基板処理装置、蓋部カバーおよび半導体装置の製造方法
JP6737139B2 (ja) * 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置
WO2021187277A1 (ja) * 2020-03-19 2021-09-23 株式会社Kokusai Electric 基板処理装置、断熱材アセンブリ及び半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002280375A (ja) 2001-03-21 2002-09-27 Hitachi Kokusai Electric Inc 基板処理装置
JP2002319546A (ja) 2001-04-23 2002-10-31 Hitachi Kokusai Electric Inc 半導体製造装置
JP2004119510A (ja) 2002-09-24 2004-04-15 Tokyo Electron Ltd 熱処理装置
JP2008172204A (ja) 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法、および加熱装置
JP2010283336A (ja) 2009-05-01 2010-12-16 Hitachi Kokusai Electric Inc 熱処理装置

Also Published As

Publication number Publication date
KR20190108052A (ko) 2019-09-23
TW201939615A (zh) 2019-10-01
KR102414894B1 (ko) 2022-07-01
US20190287828A1 (en) 2019-09-19
CN110277334A (zh) 2019-09-24
TWI748167B (zh) 2021-12-01
CN110277334B (zh) 2023-09-05
JP2019161018A (ja) 2019-09-19
US11424143B2 (en) 2022-08-23

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