JP7021063B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7021063B2
JP7021063B2 JP2018230703A JP2018230703A JP7021063B2 JP 7021063 B2 JP7021063 B2 JP 7021063B2 JP 2018230703 A JP2018230703 A JP 2018230703A JP 2018230703 A JP2018230703 A JP 2018230703A JP 7021063 B2 JP7021063 B2 JP 7021063B2
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Japan
Prior art keywords
electrode
region
semiconductor device
crystal member
semiconductor
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JP2018230703A
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English (en)
Japanese (ja)
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JP2020096003A (ja
JP2020096003A5 (enExample
Inventor
重哉 木村
学史 吉田
達雄 清水
良介 飯島
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Toshiba Corp
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Toshiba Corp
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Priority to JP2018230703A priority Critical patent/JP7021063B2/ja
Priority to US16/568,490 priority patent/US11075262B2/en
Publication of JP2020096003A publication Critical patent/JP2020096003A/ja
Publication of JP2020096003A5 publication Critical patent/JP2020096003A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2018230703A 2018-12-10 2018-12-10 半導体装置 Active JP7021063B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018230703A JP7021063B2 (ja) 2018-12-10 2018-12-10 半導体装置
US16/568,490 US11075262B2 (en) 2018-12-10 2019-09-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018230703A JP7021063B2 (ja) 2018-12-10 2018-12-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2020096003A JP2020096003A (ja) 2020-06-18
JP2020096003A5 JP2020096003A5 (enExample) 2021-02-18
JP7021063B2 true JP7021063B2 (ja) 2022-02-16

Family

ID=70970317

Family Applications (1)

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JP2018230703A Active JP7021063B2 (ja) 2018-12-10 2018-12-10 半導体装置

Country Status (2)

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US (1) US11075262B2 (enExample)
JP (1) JP7021063B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7021063B2 (ja) * 2018-12-10 2022-02-16 株式会社東芝 半導体装置
CN110224019B (zh) * 2019-04-12 2023-12-01 广东致能科技有限公司 一种半导体器件及其制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086548A (ja) 2005-12-12 2006-03-30 Nissan Motor Co Ltd 電界効果トランジスタ
JP2006344759A (ja) 2005-06-08 2006-12-21 Sharp Corp トレンチ型ｍｏｓｆｅｔ及びその製造方法
JP2009194065A (ja) 2008-02-13 2009-08-27 Denso Corp 炭化珪素半導体装置およびその製造方法
US20150014700A1 (en) 2013-07-15 2015-01-15 Hrl Laboratories Llc Vertical iii-nitride semiconductor device with a vertically formed two dimensional electron gas
JP2015008331A (ja) 2006-11-20 2015-01-15 パナソニック株式会社 半導体装置
JP2017220667A (ja) 2016-05-24 2017-12-14 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ トレンチゲート構造を有するワイドバンドギャップ半導体素子
JP2018010995A (ja) 2016-07-14 2018-01-18 株式会社豊田中央研究所 炭化珪素半導体装置とその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103727A (ja) 2005-10-05 2007-04-19 Toyota Motor Corp 炭化珪素半導体装置及びその製造方法
JP5207874B2 (ja) 2008-08-08 2013-06-12 親夫 木村 半導体装置およびその製造方法
JP2016058648A (ja) 2014-09-11 2016-04-21 株式会社東芝 半導体装置
US9601610B1 (en) * 2015-06-18 2017-03-21 Hrl Laboratories, Llc Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
CN106611781A (zh) * 2015-10-27 2017-05-03 上海新昇半导体科技有限公司 量子阱器件及其形成方法
JPWO2019188767A1 (ja) * 2018-03-29 2021-03-18 パナソニックＩｐマネジメント株式会社 半導体装置及びその製造方法
JP6903604B2 (ja) 2018-05-14 2021-07-14 株式会社東芝 半導体装置
JP6924166B2 (ja) 2018-05-14 2021-08-25 株式会社東芝 半導体装置
JP7021063B2 (ja) * 2018-12-10 2022-02-16 株式会社東芝 半導体装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344759A (ja) 2005-06-08 2006-12-21 Sharp Corp トレンチ型ｍｏｓｆｅｔ及びその製造方法
JP2006086548A (ja) 2005-12-12 2006-03-30 Nissan Motor Co Ltd 電界効果トランジスタ
JP2015008331A (ja) 2006-11-20 2015-01-15 パナソニック株式会社 半導体装置
JP2009194065A (ja) 2008-02-13 2009-08-27 Denso Corp 炭化珪素半導体装置およびその製造方法
US20150014700A1 (en) 2013-07-15 2015-01-15 Hrl Laboratories Llc Vertical iii-nitride semiconductor device with a vertically formed two dimensional electron gas
JP2017220667A (ja) 2016-05-24 2017-12-14 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ トレンチゲート構造を有するワイドバンドギャップ半導体素子
JP2018010995A (ja) 2016-07-14 2018-01-18 株式会社豊田中央研究所 炭化珪素半導体装置とその製造方法

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US20200185492A1 (en) 2020-06-11
US11075262B2 (en) 2021-07-27

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