JP2017220667A - トレンチゲート構造を有するワイドバンドギャップ半導体素子 - Google Patents
トレンチゲート構造を有するワイドバンドギャップ半導体素子 Download PDFInfo
- Publication number
- JP2017220667A JP2017220667A JP2017101464A JP2017101464A JP2017220667A JP 2017220667 A JP2017220667 A JP 2017220667A JP 2017101464 A JP2017101464 A JP 2017101464A JP 2017101464 A JP2017101464 A JP 2017101464A JP 2017220667 A JP2017220667 A JP 2017220667A
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- semiconductor device
- region
- source
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 210000000746 body region Anatomy 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims description 12
- 238000000926 separation method Methods 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 230000007480 spreading Effects 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】 半導体素子は、第1の面から、ワイドバンドギャップ半導体材料で作られた半導体ボディの中へ延びるトレンチゲート構造を含む。トレンチゲート構造は、半導体ボディのメサ部同士を隔てる。メサ部では、ボディ領域が、ドレイン構造とともに第1のpn接合を形成し、第1のメサ側壁に直接隣接する。メサ部内のソース領域がボディ領域とともに第2のpn接合を形成し、ボディ領域はソース領域をドレイン構造から隔てる。ソース領域は、第1のメサ側壁、及び第1のメサ側壁と対向する第2のメサ側壁に直接隣接する。
【選択図】図1A
Description
101 第1の面
102 第2の面
110 ソース領域
111 第1の区画
112 第2の区画
115 接続区画
120 ボディ領域
130 ドレイン構造
131 ドリフトゾーン
132 電流拡散ゾーン
139 接点構造
140 ダイオード領域
141 面区画
142 接触部
143 遮蔽部
150 トレンチゲート構造
151 ゲート誘電体
155 ゲート電極
190 メサ部
191、192 メサ側壁
199 端部区画
210 層間誘電体
240 分離領域
310 第1の負荷電極
311 金属含有界面層
315 メサ接点構造
320 第2の負荷電極
330 ゲートメタライゼーション
335 ゲート接点構造
350 トレンチソース構造
351 ソース絶縁体
355 トレンチソース電極
356 ソース接点構造
500 半導体素子
D ドレイン端子
G ゲート端子
L1 第1の負荷端子
L2 第2の負荷端子
pn1 第1のpn接合
pn2 第2のpn接合
S ソース端子
TC トランジスタセル
Claims (18)
- 第1の面から、ワイドバンドギャップ半導体材料で作られた半導体ボディの中へ延び、前記半導体ボディのメサ部同士を隔てるトレンチゲート構造と、
前記メサ部内のボディ領域であって、ドレイン構造とともに第1のpn接合を形成し、第1のメサ側壁に直接隣接する前記ボディ領域と、
前記メサ部内のソース領域であって、前記ソース領域は前記ボディ領域とともに第2のpn接合を形成し、前記ボディ領域は前記ソース領域を前記ドレイン構造から隔て、前記ソース領域は、前記第1のメサ側壁、及び前記第1のメサ側壁と対向する第2のメサ側壁に直接隣接する、前記ソース領域と、
を含む半導体素子。 - 前記ソース領域は、前記第1のメサ側壁に直接隣接する第1の区画と、前記第2のメサ側壁に直接隣接する1つ以上の第2の区画と、を含む、
請求項1に記載の半導体素子。 - 前記1つ以上の第2の区画は、前記メサ部の長手軸に沿って互いに隔てられる、
請求項2に記載の半導体素子。 - 前記1つ以上の第2の区画は、前記メサ部の長手軸全体に沿って延びる連続構造を含む、
請求項2に記載の半導体素子。 - 前記ソース領域は更に、前記第1及び第2の区画に挟まれて前記第1及び第2の区画に直接隣接する接続区画を含み、前記接続区画同士は、前記メサ部の長手軸に沿って互いに隔てられる、
請求項2に記載の半導体素子。 - 前記接続区画は、前記ボディ領域の導電型の分離領域によって、前記メサ部の前記長手軸に沿って互いに隔てられる、
請求項5に記載の半導体素子。 - 前記ソース領域は、レール及び横木を有する梯子形状を有し、前記第1及び第2の区画が前記レールを形成し、前記接続区画が前記横木を形成する、
請求項5に記載の半導体素子。 - 前記接続区画の、前記メサ部の前記長手軸に沿う第1の水平方向長さが、前記メサ部の前記長手軸に沿う、隣接する前記接続区画同士の間隔より小さい、
請求項5に記載の半導体素子。 - 前記接続区画の、前記メサ部の前記長手軸に沿う第1の水平方向長さが、少なくとも200nmであって最大で5μmである、
請求項5に記載の半導体素子。 - 前記1つ以上の第2の区画の、前記第1の面と直交する垂直方向長さが、前記第1の区画の、前記第1の面と直交する垂直方向長さに等しい、
請求項2に記載の半導体素子。 - 前記1つ以上の第2の区画の、前記第1の面と直交する垂直方向長さが、前記第1の区画の、前記第1の面と直交する垂直方向長さより大きい、
請求項2に記載の半導体素子。 - 前記1つ以上の第2の区画の、前記第1の面と直交する垂直方向長さが、少なくとも200nmであって最大で1μmである、
請求項2に記載の半導体素子。 - 前記接続区画同士は、ダイオード領域の面区画によって、前記メサ部の前記長手軸に沿って互いに隔てられ、前記ダイオード領域は、前記第1の面から前記半導体ボディ内に延びて、前記ドレイン構造とともにダイオード接合を形成し、前記ダイオード領域の垂直方向長さが、前記トレンチゲート構造の垂直方向長さより大きい、
請求項5に記載の半導体素子。 - 前記第1の面から前記半導体ボディ内に延びるトレンチソース構造を更に含み、前記トレンチソース構造は、第1の負荷電極に電気的に接続されたトレンチソース電極を含む、
請求項1に記載の半導体素子。 - 前記トレンチゲート構造と前記トレンチソース構造の対応する寸法が等しい、
請求項14に記載の半導体素子。 - 前記トレンチソース構造のうちの隣接する2つのトレンチソース構造の間に少なくとも9個の前記トレンチゲート構造が形成される、
請求項14に記載の半導体素子。 - 前記ワイドバンドギャップ半導体材料は六方結晶構造を有する、
請求項1に記載の半導体素子。 - 第1の面から半導体ボディ内へ延び、前記半導体ボディのメサ部同士を隔てるトレンチゲート構造と、
前記メサ部内のボディ領域であって、ドレイン構造とともに第1のpn接合を形成し、第1のメサ側壁に直接隣接する前記ボディ領域と、
ボディ領域とともに第2のpn接合を形成するソース領域であって、前記ボディ領域は前記ソース領域を前記ドレイン構造から隔てる、前記ソース領域と、
前記第1の面から前記半導体ボディ内に延びるトレンチソース構造であって、第1の負荷電極に電気的に接続されたトレンチソース電極を含む前記トレンチソース構造と、
を含む半導体素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/162,716 US20170345905A1 (en) | 2016-05-24 | 2016-05-24 | Wide-Bandgap Semiconductor Device with Trench Gate Structures |
US15/162,716 | 2016-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017220667A true JP2017220667A (ja) | 2017-12-14 |
JP6433539B2 JP6433539B2 (ja) | 2018-12-05 |
Family
ID=60269143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017101464A Active JP6433539B2 (ja) | 2016-05-24 | 2017-05-23 | トレンチゲート構造を有するワイドバンドギャップ半導体素子 |
Country Status (4)
Country | Link |
---|---|
US (2) | US20170345905A1 (ja) |
JP (1) | JP6433539B2 (ja) |
CN (1) | CN107452803B (ja) |
DE (1) | DE102017110969A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161167A (ja) * | 2018-03-16 | 2019-09-19 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2020096003A (ja) * | 2018-12-10 | 2020-06-18 | 株式会社東芝 | 半導体装置 |
WO2020145109A1 (ja) * | 2019-01-08 | 2020-07-16 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102014117780B4 (de) | 2014-12-03 | 2018-06-21 | Infineon Technologies Ag | Halbleiterbauelement mit einer Grabenelektrode und Verfahren zur Herstellung |
DE102014119465B3 (de) | 2014-12-22 | 2016-05-25 | Infineon Technologies Ag | Halbleitervorrichtung mit streifenförmigen trenchgatestrukturen, transistormesas und diodenmesas |
CN105226090B (zh) * | 2015-11-10 | 2018-07-13 | 株洲中车时代电气股份有限公司 | 一种绝缘栅双极晶体管及其制作方法 |
JP6871058B2 (ja) * | 2017-05-22 | 2021-05-12 | 株式会社東芝 | 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機 |
JP6274348B1 (ja) * | 2017-08-25 | 2018-02-07 | 富士電機株式会社 | 駆動回路および半導体モジュール |
DE102017128633A1 (de) | 2017-12-01 | 2019-06-06 | Infineon Technologies Ag | Siliziumcarbid-halbleiterbauelement mit grabengatestrukturen und abschirmgebieten |
DE102018103973B4 (de) | 2018-02-22 | 2020-12-03 | Infineon Technologies Ag | Siliziumcarbid-halbleiterbauelement |
DE102019111308A1 (de) | 2018-05-07 | 2019-11-07 | Infineon Technologies Ag | Siliziumcarbid halbleiterbauelement |
DE102018115728B4 (de) | 2018-06-29 | 2021-09-23 | Infineon Technologies Ag | Halbleitervorrichtung, die einen Siliziumcarbidkörper und Transistorzellen enthält |
IT201800007780A1 (it) * | 2018-08-02 | 2020-02-02 | St Microelectronics Srl | Dispositivo mosfet in carburo di silicio e relativo metodo di fabbricazione |
DE102018124740A1 (de) | 2018-10-08 | 2020-04-09 | Infineon Technologies Ag | Halbleiterbauelement mit einem sic halbleiterkörper und verfahren zur herstellung eines halbleiterbauelements |
DE102018127797B4 (de) * | 2018-11-07 | 2022-08-04 | Infineon Technologies Ag | Einen siliziumcarbid-körper enthaltende halbleitervorrichtung |
US10903322B2 (en) | 2018-11-16 | 2021-01-26 | Infineon Technologies Ag | SiC power semiconductor device with integrated body diode |
US10985248B2 (en) | 2018-11-16 | 2021-04-20 | Infineon Technologies Ag | SiC power semiconductor device with integrated Schottky junction |
US10586845B1 (en) | 2018-11-16 | 2020-03-10 | Infineon Technologies Ag | SiC trench transistor device and methods of manufacturing thereof |
DE102019130376A1 (de) * | 2019-01-04 | 2020-07-09 | Infineon Technologies Ag | Siliziumcarbid-vorrichtung mit schottky-kontakt |
DE102019119121B3 (de) * | 2019-07-15 | 2020-09-03 | Infineon Technologies Ag | Graben-kontaktstruktur enthaltende halbleitervorrichtung und herstellungsverfahren |
DE102019121859B3 (de) * | 2019-08-14 | 2020-11-26 | Infineon Technologies Ag | Siliziumcarbid-vorrichtung mit graben-gate |
CN110416295B (zh) * | 2019-08-30 | 2020-08-14 | 电子科技大学 | 一种沟槽型绝缘栅双极晶体管及其制备方法 |
DE102019129412A1 (de) | 2019-10-31 | 2021-05-06 | Infineon Technologies Ag | Siliziumcarbid-vorrichtung mit graben-gatestruktur und herstellungsverfahren |
EP3930006A1 (en) | 2020-06-24 | 2021-12-29 | Infineon Technologies AG | Semiconductor device including trench gate structure and buried shielding region and method of manufacturing |
CN113838920B (zh) * | 2021-09-23 | 2023-04-28 | 电子科技大学 | 一种具有自偏置pmos的分离栅cstbt及其制作方法 |
CN113838913B (zh) * | 2021-09-23 | 2023-04-28 | 电子科技大学 | 分段式注入的自钳位igbt器件及其制作方法 |
CN114551586B (zh) * | 2022-04-27 | 2022-07-12 | 成都蓉矽半导体有限公司 | 集成栅控二极管的碳化硅分离栅mosfet元胞及制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017699A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 半導体素子及びその製造方法 |
WO2009122486A1 (ja) * | 2008-03-31 | 2009-10-08 | 三菱電機株式会社 | 半導体装置 |
JP2015164224A (ja) * | 2008-03-03 | 2015-09-10 | 富士電機株式会社 | トレンチゲート型半導体装置の製造方法 |
JP2015226060A (ja) * | 2014-05-23 | 2015-12-14 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | 半導体装置 |
WO2016072074A1 (ja) * | 2014-11-03 | 2016-05-12 | 株式会社デンソー | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10132871A (ja) | 1996-10-29 | 1998-05-22 | Toshiba Corp | 半導体装置 |
JP2002110978A (ja) * | 2000-10-02 | 2002-04-12 | Toshiba Corp | 電力用半導体素子 |
JP3954541B2 (ja) * | 2003-08-05 | 2007-08-08 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5673393B2 (ja) | 2011-06-29 | 2015-02-18 | 株式会社デンソー | 炭化珪素半導体装置 |
KR101851199B1 (ko) * | 2011-12-28 | 2018-04-25 | 삼성전자주식회사 | 질화된 게이트 절연층을 포함하는 반도체 소자 및 그 제조 방법 |
US8637922B1 (en) | 2012-07-19 | 2014-01-28 | Infineon Technologies Ag | Semiconductor device |
US9293558B2 (en) | 2012-11-26 | 2016-03-22 | Infineon Technologies Austria Ag | Semiconductor device |
US9799766B2 (en) * | 2013-02-20 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage transistor structure and method |
US9620637B2 (en) * | 2013-05-24 | 2017-04-11 | Infineon Technologies Ag | Semiconductor device comprising a gate electrode connected to a source terminal |
US9385228B2 (en) * | 2013-11-27 | 2016-07-05 | Infineon Technologies Ag | Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device |
US9318598B2 (en) * | 2014-05-30 | 2016-04-19 | Texas Instruments Incorporated | Trench MOSFET having reduced gate charge |
-
2016
- 2016-05-24 US US15/162,716 patent/US20170345905A1/en not_active Abandoned
-
2017
- 2017-05-19 DE DE102017110969.2A patent/DE102017110969A1/de active Pending
- 2017-05-23 JP JP2017101464A patent/JP6433539B2/ja active Active
- 2017-05-23 CN CN201710368872.7A patent/CN107452803B/zh active Active
-
2018
- 2018-01-10 US US15/866,755 patent/US10211306B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003017699A (ja) * | 2001-06-29 | 2003-01-17 | Toshiba Corp | 半導体素子及びその製造方法 |
JP2015164224A (ja) * | 2008-03-03 | 2015-09-10 | 富士電機株式会社 | トレンチゲート型半導体装置の製造方法 |
WO2009122486A1 (ja) * | 2008-03-31 | 2009-10-08 | 三菱電機株式会社 | 半導体装置 |
JP2015226060A (ja) * | 2014-05-23 | 2015-12-14 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | 半導体装置 |
WO2016072074A1 (ja) * | 2014-11-03 | 2016-05-12 | 株式会社デンソー | 半導体装置 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019161167A (ja) * | 2018-03-16 | 2019-09-19 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US11302805B2 (en) | 2018-03-16 | 2022-04-12 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method to manufacture semiconductor device |
JP7119449B2 (ja) | 2018-03-16 | 2022-08-17 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2020096003A (ja) * | 2018-12-10 | 2020-06-18 | 株式会社東芝 | 半導体装置 |
JP7021063B2 (ja) | 2018-12-10 | 2022-02-16 | 株式会社東芝 | 半導体装置 |
WO2020145109A1 (ja) * | 2019-01-08 | 2020-07-16 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
CN113261079A (zh) * | 2019-01-08 | 2021-08-13 | 三菱电机株式会社 | 半导体装置以及电力变换装置 |
JPWO2020145109A1 (ja) * | 2019-01-08 | 2021-09-30 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
JP6991370B2 (ja) | 2019-01-08 | 2022-01-12 | 三菱電機株式会社 | 半導体装置及び電力変換装置 |
Also Published As
Publication number | Publication date |
---|---|
CN107452803B (zh) | 2021-01-15 |
DE102017110969A1 (de) | 2017-11-30 |
US20170345905A1 (en) | 2017-11-30 |
US20180158920A1 (en) | 2018-06-07 |
US10211306B2 (en) | 2019-02-19 |
CN107452803A (zh) | 2017-12-08 |
JP6433539B2 (ja) | 2018-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6433539B2 (ja) | トレンチゲート構造を有するワイドバンドギャップ半導体素子 | |
JP6200938B2 (ja) | ストライプ状トレンチゲート構造、トランジスタメサおよびダイオードメサを有する半導体素子 | |
JP6622343B2 (ja) | 炭化ケイ素半導体デバイス及びその製造方法 | |
JP6732715B2 (ja) | ストライプ状トレンチゲート構造とゲートコネクタ構造とを有する半導体装置 | |
JP6861674B2 (ja) | ダイオード領域用のゲート電極とコンタクト構造とを含んでいるトレンチ構造を備えた半導体デバイス | |
JP6312884B2 (ja) | トランジスタセルおよび補償構造体を含む広バンドギャップ半導体デバイス | |
JP6324425B2 (ja) | 六方晶格子を有する半導体ボディにトレンチゲート構造を備えた半導体デバイス | |
JP7454911B2 (ja) | シリコンカーバイド半導体部品 | |
CN107026163B (zh) | 半导体器件 | |
US9837498B2 (en) | Stripe-shaped electrode structure including a main portion with a field electrode and an end portion terminating the electrode structure | |
US20060214197A1 (en) | Semiconductor device | |
CN111162127B (zh) | 包括碳化硅本体的半导体器件和制造方法 | |
US10418476B2 (en) | Silicon carbide semiconductor device | |
US20140231928A1 (en) | Super Junction Semiconductor Device with an Edge Area Having a Reverse Blocking Capability | |
US20200006544A1 (en) | Semiconductor device including silicon carbide body and transistor cells | |
KR101311540B1 (ko) | 전력 반도체 소자 | |
US10014367B2 (en) | Semiconductor device including an edge construction with straight sections and corner sections | |
CN113054016A (zh) | 一种碳化硅mosfet器件的元胞结构及功率半导体器件 | |
CN113053992B (zh) | 一种碳化硅mosfet器件的元胞结构及功率半导体器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180403 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180702 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181009 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181106 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6433539 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |