JP2020096003A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020096003A5 JP2020096003A5 JP2018230703A JP2018230703A JP2020096003A5 JP 2020096003 A5 JP2020096003 A5 JP 2020096003A5 JP 2018230703 A JP2018230703 A JP 2018230703A JP 2018230703 A JP2018230703 A JP 2018230703A JP 2020096003 A5 JP2020096003 A5 JP 2020096003A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- region
- crystal member
- crystal
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 12
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018230703A JP7021063B2 (ja) | 2018-12-10 | 2018-12-10 | 半導体装置 |
| US16/568,490 US11075262B2 (en) | 2018-12-10 | 2019-09-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018230703A JP7021063B2 (ja) | 2018-12-10 | 2018-12-10 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020096003A JP2020096003A (ja) | 2020-06-18 |
| JP2020096003A5 true JP2020096003A5 (enExample) | 2021-02-18 |
| JP7021063B2 JP7021063B2 (ja) | 2022-02-16 |
Family
ID=70970317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018230703A Active JP7021063B2 (ja) | 2018-12-10 | 2018-12-10 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US11075262B2 (enExample) |
| JP (1) | JP7021063B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7021063B2 (ja) * | 2018-12-10 | 2022-02-16 | 株式会社東芝 | 半導体装置 |
| CN117317001A (zh) * | 2019-04-12 | 2023-12-29 | 广东致能科技有限公司 | 一种半导体器件及其制造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006344759A (ja) * | 2005-06-08 | 2006-12-21 | Sharp Corp | トレンチ型ｍｏｓｆｅｔ及びその製造方法 |
| JP2007103727A (ja) | 2005-10-05 | 2007-04-19 | Toyota Motor Corp | 炭化珪素半導体装置及びその製造方法 |
| JP2006086548A (ja) * | 2005-12-12 | 2006-03-30 | Nissan Motor Co Ltd | 電界効果トランジスタ |
| CN103219375A (zh) * | 2006-11-20 | 2013-07-24 | 松下电器产业株式会社 | 半导体装置 |
| JP4793390B2 (ja) * | 2008-02-13 | 2011-10-12 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP5207874B2 (ja) | 2008-08-08 | 2013-06-12 | 親夫 木村 | 半導体装置およびその製造方法 |
| CN105393359B (zh) * | 2013-07-15 | 2018-12-14 | Hrl实验室有限责任公司 | Hemt器件和方法 |
| JP2016058648A (ja) | 2014-09-11 | 2016-04-21 | 株式会社東芝 | 半導体装置 |
| US9601610B1 (en) * | 2015-06-18 | 2017-03-21 | Hrl Laboratories, Llc | Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas |
| CN106611781A (zh) * | 2015-10-27 | 2017-05-03 | 上海新昇半导体科技有限公司 | 量子阱器件及其形成方法 |
| US20170345905A1 (en) * | 2016-05-24 | 2017-11-30 | Infineon Technologies Ag | Wide-Bandgap Semiconductor Device with Trench Gate Structures |
| JP2018010995A (ja) * | 2016-07-14 | 2018-01-18 | 株式会社豊田中央研究所 | 炭化珪素半導体装置とその製造方法 |
| US20210028303A1 (en) * | 2018-03-29 | 2021-01-28 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for fabricating the same |
| JP6903604B2 (ja) | 2018-05-14 | 2021-07-14 | 株式会社東芝 | 半導体装置 |
| JP6924166B2 (ja) | 2018-05-14 | 2021-08-25 | 株式会社東芝 | 半導体装置 |
| JP7021063B2 (ja) * | 2018-12-10 | 2022-02-16 | 株式会社東芝 | 半導体装置 |
-
2018
- 2018-12-10 JP JP2018230703A patent/JP7021063B2/ja active Active
-
2019
- 2019-09-12 US US16/568,490 patent/US11075262B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103716026B (zh) | 开关电路 | |
| JP6626267B2 (ja) | 半導体装置 | |
| WO2015033449A1 (ja) | 半導体装置、半導体スイッチング素子の駆動装置 | |
| JP5733627B2 (ja) | ゲートドライブ回路 | |
| US20130265028A1 (en) | High side gate driver, switching chip, and power device | |
| JP2009201096A (ja) | スイッチ回路 | |
| CN102034820A (zh) | 半导体装置 | |
| JP6458552B2 (ja) | スイッチング方式の降圧型ｄｃ−ｄｃコンバータ、及び電力変換回路 | |
| JP2020096003A5 (enExample) | ||
| JP6542174B2 (ja) | 半導体装置及び半導体装置の制御方法 | |
| JPWO2022239626A5 (enExample) | ||
| CN107667422A (zh) | 复合型半导体装置 | |
| CN112997294B (zh) | 半导体装置 | |
| KR101920710B1 (ko) | 인버터 소자, ｎａｎｄ 소자, ｎｏｒ 소자, 및 이를 포함하는 논리 장치 | |
| CN105425892B (zh) | 电流控制电路 | |
| JP6009815B2 (ja) | ゲート駆動回路 | |
| WO2017143998A1 (zh) | 晶体管的驱动电路 | |
| JP2015154594A (ja) | インバータ出力回路 | |
| US10312913B2 (en) | Level shifter | |
| CN114513194B (zh) | 一种反相器 | |
| JP4815740B2 (ja) | 半導体装置とそれを利用したレベルシフト回路 | |
| JP2020096003A (ja) | 半導体装置 | |
| WO2004068709A1 (ja) | スイッチング回路 | |
| US9966947B2 (en) | Gate driving circuit for insulated gate-type power semiconductor element | |
| CN109983699B (zh) | 栅极驱动电路 |