JP7012306B2 - トレンチmos型ショットキーダイオード及びその製造方法 - Google Patents
トレンチmos型ショットキーダイオード及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 200
- 238000001312 dry etching Methods 0.000 claims description 71
- 239000013078 crystal Substances 0.000 claims description 51
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 46
- 238000011282 treatment Methods 0.000 claims description 35
- 238000000137 annealing Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 14
- 238000001039 wet etching Methods 0.000 claims description 14
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- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- 238000000231 atomic layer deposition Methods 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
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- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
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- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- SMNDYUVBFMFKNZ-UHFFFAOYSA-N 2-furoic acid Chemical compound OC(=O)C1=CC=CO1 SMNDYUVBFMFKNZ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 229910052735 hafnium Inorganic materials 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
Description
(トレンチMOS型ショットキーダイオードの構成)
図1は、実施の形態に係るトレンチMOS型ショットキーダイオード1の垂直断面図である。トレンチMOS型ショットキーダイオード1は、トレンチMOS領域を有する縦型のGa2O3系のショットキーダイオードである。
以下に、トレンチMOS型ショットキーダイオード1の製造方法の一例を示す。
上記実施の形態によれば、絶縁性のドライエッチングダメージ層11aをアニール処理により薄くする、又はウェットエッチングにより除去することにより、Ga2O3系結晶から構成されるトレンチMOS型ショットキーダイオード1のオン抵抗の異常増加が抑えることができる。
Claims (9)
- Ga2O3系単結晶からなる第1の半導体層と、
前記第1の半導体層に積層される層であって、その前記第1の半導体層と反対側の面に開口するトレンチを有する、Ga2O3系単結晶からなる第2の半導体層と、
前記第2の半導体層の前記第1の半導体層と反対側の面上に形成されたアノード電極と、
前記第1の半導体層の前記第2の半導体層と反対側の面上に形成されたカソード電極と、
前記第2の半導体層の前記トレンチの内面を覆う絶縁膜と、
前記第2の半導体層の前記トレンチ内に前記絶縁膜に覆われるように埋め込まれ、前記アノード電極に接触するトレンチ電極と、
を備え、
前記第2の半導体層が、前記トレンチの内面を含む領域に厚さ0.8μm以下の絶縁性のドライエッチングダメージ層を有する、
トレンチMOS型ショットキーダイオード。 - 前記ドライエッチングダメージ層の厚さが0.5μm以下である、
請求項1に記載のトレンチMOS型ショットキーダイオード。 - 前記第2の半導体層の主面がb軸に平行な面であり、
前記トレンチが[010]方向に直交する線状の平面パターンを有する、
請求項1又は2に記載のトレンチMOS型ショットキーダイオード。 - Ga2O3系単結晶からなる第1の半導体層と、
前記第1の半導体層に積層される層であって、その前記第1の半導体層と反対側の面に開口するトレンチを有する、Ga2O3系単結晶からなる第2の半導体層と、
前記第2の半導体層の前記第1の半導体層と反対側の面上に形成されたアノード電極と、
前記第1の半導体層の前記第2の半導体層と反対側の面上に形成されたカソード電極と、
前記第2の半導体層の前記トレンチの内面を覆う絶縁膜と、
前記第2の半導体層の前記トレンチ内に前記絶縁膜に覆われるように埋め込まれ、前記アノード電極に接触するトレンチ電極と、
を備え、
前記第2の半導体層が、ドライエッチングダメージを含まない層であり、
前記第2の半導体層の主面がb軸に平行な面であり、
前記トレンチが[010]方向に平行な線状の平面パターンを有する、
トレンチMOS型ショットキーダイオード。 - Ga2O3系単結晶からなる第1の半導体層とGa2O3系単結晶からなる第2の半導体層との積層体を準備する工程と、
ドライエッチングにより、前記第2の半導体層の前記第1の半導体層と反対側の面に開口するトレンチを形成する工程と、
アニール処理により、前記第2の半導体層の前記トレンチの内面を含む領域に形成された、絶縁性のドライエッチングダメージ層を薄くする工程と、
前記第2の半導体層の前記トレンチの内面を覆うように絶縁膜を形成する工程と、
前記第2の半導体層の前記トレンチ内に、前記絶縁膜に覆われるようにトレンチ電極を埋め込む工程と、
前記第2の半導体層の前記第1の半導体層と反対側の面上に、前記トレンチ電極に接触するようにアノード電極を形成する工程と、
前記第1の半導体層の前記第2の半導体層と反対側の面上に、カソード電極を形成する工程と、
を含む、
トレンチMOS型ショットキーダイオードの製造方法。 - 前記アニール処理の温度が700℃以上である、
請求項5に記載のトレンチMOS型ショットキーダイオードの製造方法。 - 前記第2の半導体層の主面がb軸に平行な面であり、
前記トレンチが[010]方向に直交する線状の平面パターンを有する、
請求項5又は6に記載のトレンチMOS型ショットキーダイオードの製造方法。 - Ga2O3系単結晶からなる第1の半導体層とGa2O3系単結晶からなる第2の半導体層との積層体を準備する工程と、
ドライエッチングにより、前記第2の半導体層の前記第1の半導体層と反対側の面に開口するトレンチを形成する工程と、
ウェットエッチングにより、前記第2の半導体層の前記トレンチの内面を含む領域に形成された、絶縁性のドライエッチングダメージ層を除去する工程と、
前記第2の半導体層の前記トレンチの内面を覆うように絶縁膜を形成する工程と、
前記第2の半導体層の前記トレンチ内に、前記絶縁膜に覆われるようにトレンチ電極を埋め込む工程と、
前記第2の半導体層の前記第1の半導体層と反対側の面上に、前記トレンチ電極に接触するようにアノード電極を形成する工程と、
前記第1の半導体層の前記第2の半導体層と反対側の面上に、カソード電極を形成する工程と、
を含む、
トレンチMOS型ショットキーダイオードの製造方法。 - 前記第2の半導体層の主面がb軸に平行な面であり、
前記トレンチが[010]方向に平行な線状の平面パターンを有する、
請求項8に記載のトレンチMOS型ショットキーダイオードの製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2018036901A JP7012306B2 (ja) | 2018-03-01 | 2018-03-01 | トレンチmos型ショットキーダイオード及びその製造方法 |
EP19761259.1A EP3761374A4 (en) | 2018-03-01 | 2019-02-25 | TRENCH-MOS-SCHOTTKY DIODE AND MANUFACTURING PROCESS FOR IT |
PCT/JP2019/007029 WO2019167873A1 (ja) | 2018-03-01 | 2019-02-25 | トレンチmos型ショットキーダイオード及びその製造方法 |
US16/977,190 US11456388B2 (en) | 2018-03-01 | 2019-02-25 | Trench MOS schottky diode and method for producing same |
CN201980016365.4A CN111801804B (zh) | 2018-03-01 | 2019-02-25 | 沟槽mos型肖特基二极管及其制造方法 |
TW108106627A TWI796446B (zh) | 2018-03-01 | 2019-02-27 | 溝槽式金氧半型肖特基二極體及其製造方法 |
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JP2010192555A (ja) | 2009-02-17 | 2010-09-02 | Sumitomo Electric Ind Ltd | ショットキバリアダイオードおよびその製造方法 |
JP2016025256A (ja) | 2014-07-22 | 2016-02-08 | 株式会社Flosfia | 半導体装置 |
JP2016039194A (ja) | 2014-08-06 | 2016-03-22 | 株式会社タムラ製作所 | Ga2O3系単結晶の高抵抗領域形成方法、並びに、結晶積層構造体及び半導体素子 |
WO2017188105A1 (ja) | 2016-04-28 | 2017-11-02 | 株式会社タムラ製作所 | トレンチmos型ショットキーダイオード |
JP2019016680A (ja) | 2017-07-06 | 2019-01-31 | 株式会社タムラ製作所 | ショットキーバリアダイオード |
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JP6711100B2 (ja) | 2016-04-15 | 2020-06-17 | 富士電機株式会社 | 炭化珪素半導体装置、炭化珪素半導体装置の製造方法および炭化珪素半導体装置の制御方法 |
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JP2016025256A (ja) | 2014-07-22 | 2016-02-08 | 株式会社Flosfia | 半導体装置 |
JP2016039194A (ja) | 2014-08-06 | 2016-03-22 | 株式会社タムラ製作所 | Ga2O3系単結晶の高抵抗領域形成方法、並びに、結晶積層構造体及び半導体素子 |
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EP3761374A4 (en) | 2021-11-17 |
TWI796446B (zh) | 2023-03-21 |
JP2019153645A (ja) | 2019-09-12 |
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US11456388B2 (en) | 2022-09-27 |
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