JP7415537B2 - ショットキーバリアダイオード - Google Patents
ショットキーバリアダイオード Download PDFInfo
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- JP7415537B2 JP7415537B2 JP2019228555A JP2019228555A JP7415537B2 JP 7415537 B2 JP7415537 B2 JP 7415537B2 JP 2019228555 A JP2019228555 A JP 2019228555A JP 2019228555 A JP2019228555 A JP 2019228555A JP 7415537 B2 JP7415537 B2 JP 7415537B2
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- drift layer
- anode electrode
- schottky barrier
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- 230000004888 barrier function Effects 0.000 title claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 27
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 21
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 53
- 238000000034 method Methods 0.000 description 26
- 230000005684 electric field Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 12
- 238000004088 simulation Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
W1>W2
に設定されている。これは、電界が特に集中する外周トレンチ61の底部における絶縁破壊を防止するためである。つまり、外周トレンチ61の幅W1を拡大すると、底部の曲率半径が拡大するか、或いは、外周トレンチ61を断面で見た場合に底部によって構成されるエッジ部分が2つに分離するからである。その結果、外周トレンチ61の底部近傍における絶縁破壊が生じにくくなる。一方、外周トレンチ61の深さと中心トレンチ62の深さにおいては、互いに同じである。
図1及び図2に示したショットキーバリアダイオード10と同じ構造を有する実施例1のシミュレーションモデルを想定し、アノード電極40とカソード電極50の間に800Vの逆方向電圧を印加した場合の電界強度をシミュレーションした。半導体基板20のドーパント濃度については1×1018cm-3とし、ドリフト層30のドーパント濃度としては1×1016cm-3とした。ドリフト層30の厚みは7μmとした。また、外周トレンチ61の幅W1は10μm、中心トレンチ62の幅は2μmとし、深さはいずれも3μmとした。また、アノード電極40と接する部分におけるドリフト層30の幅、つまりメサ領域Mの幅は2μmとした。絶縁膜63は厚さ50nmのHfO2膜とし、金属膜64は厚さ100nmのCr膜とした。フィールド絶縁層70は厚さ320nmのSiO2膜とし、フィールドプレート長は10μmとした。
図10に示したショットキーバリアダイオード10Aと同じ構造を有する実施例2のシミュレーションモデルを想定し、アノード電極40とカソード電極50の間に800Vの逆方向電圧を印加した場合の電界強度をシミュレーションした。実施例2のシミュレーションモデルは、外周トレンチ61がフィールド絶縁層70で埋め込まれている以外、実施例1と同じパラメータを有している。シミュレーションの結果、フィールド絶縁層70の第2の部分72に加わる最大電界は1.2MV/cm、図10に示す領域Bにおける電界は9.8MV/cmであった。
フィールド絶縁層70の第1の部分71の材料としてAl2O3を用い、フィールド絶縁層70の第2の部分72の材料としてSiO2を用いた他は、実施例1と同じパラメータを有する実施例3のシミュレーションモデルを想定し、アノード電極40とカソード電極50の間に800Vの逆方向電圧を印加した場合の電界強度をシミュレーションした。シミュレーションの結果、領域Aにおける電界は0.4MV/cm、領域Bにおける電界は6.7MV/cmであった。
図11に示す比較例のシミュレーションモデルを想定し、アノード電極40とカソード電極50の間に800Vの逆方向電圧を印加した場合の電界強度をシミュレーションした。比較例のシミュレーションモデルは、金属膜64が省略されている他は、実施例1のシミュレーションモデルと同じパラメータを有している。シミュレーションの結果、図11に示す領域Aに加わる最大電界は11.2MV/cm、図11に示す領域Bにおける電界は10.2MV/cmであり、いずれもSiO2の絶縁破壊電界強度である10MV/cmを超えていた。
20 半導体基板
21 半導体基板の上面
22 半導体基板の裏面
30 ドリフト層
31 ドリフト層の上面
40 アノード電極
50 カソード電極
61 外周トレンチ
62 中心トレンチ
63 絶縁膜
64 金属膜
70 フィールド絶縁層
71 フィールド絶縁層の第1の部分
72 フィールド絶縁層の第2の部分
E0~E3 エッジ
M メサ領域
R レジスト
Claims (3)
- 酸化ガリウムからなる半導体基板と、
前記半導体基板上に設けられた酸化ガリウムからなるドリフト層と、
前記ドリフト層とショットキー接触するアノード電極と、
前記半導体基板とオーミック接触するカソード電極と、
前記ドリフト層に設けられたリング状の外周トレンチの内壁を覆う絶縁膜と、
前記絶縁膜を介して前記外周トレンチの前記内壁を覆うとともに、前記アノード電極と電気的に接続された金属膜と、
フィールド絶縁層と、を備え、
前記フィールド絶縁層は、前記ドリフト層の上面と前記アノード電極の間に位置する第1の部分と、前記アノード電極と電気的に接続された前記金属膜及び前記絶縁膜を介して、前記外周トレンチの前記内壁のうち、外周に位置する部分及び底部の少なくとも一部を覆う第2の部分を含むことを特徴とするショットキーバリアダイオード。 - 前記ドリフト層には、前記外周トレンチに囲まれた領域に形成された中心トレンチがさらに設けられ、
前記フィールド絶縁層の前記第1の部分は、前記外周トレンチを囲むようにリング状に設けられていることを特徴とする請求項1に記載のショットキーバリアダイオード。 - 酸化ガリウムからなる半導体基板と、
前記半導体基板上に設けられた酸化ガリウムからなるドリフト層と、
前記ドリフト層とショットキー接触するアノード電極と、
前記半導体基板とオーミック接触するカソード電極と、
前記ドリフト層に設けられたトレンチの内壁を覆う絶縁膜と、
前記絶縁膜を介して前記トレンチの前記内壁を覆うとともに、前記アノード電極と電気的に接続された金属膜と、
フィールド絶縁層と、を備え、
前記フィールド絶縁層は、前記ドリフト層の上面と前記アノード電極の間に位置する第1の部分と、前記金属膜及び前記絶縁膜を介して前記トレンチの前記内壁を覆う第2の部分を含み、
前記第1の部分と前記第2の部分が互いに異なる絶縁材料からなることを特徴とするショットキーバリアダイオード。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2019228555A JP7415537B2 (ja) | 2019-12-18 | 2019-12-18 | ショットキーバリアダイオード |
CN202080087234.8A CN114830354A (zh) | 2019-12-18 | 2020-10-05 | 肖特基势垒二极管 |
PCT/JP2020/037722 WO2021124649A1 (ja) | 2019-12-18 | 2020-10-05 | ショットキーバリアダイオード |
EP20902798.6A EP4080579A4 (en) | 2019-12-18 | 2020-10-05 | SCHOTTKY BARRIER DIODE |
US17/784,864 US20230352601A1 (en) | 2019-12-18 | 2020-10-05 | Schottky barrier diode |
TW109137752A TWI750875B (zh) | 2019-12-18 | 2020-10-30 | 肖特基能障二極體 |
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JP2019228555A JP7415537B2 (ja) | 2019-12-18 | 2019-12-18 | ショットキーバリアダイオード |
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JP2021097168A JP2021097168A (ja) | 2021-06-24 |
JP7415537B2 true JP7415537B2 (ja) | 2024-01-17 |
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US (1) | US20230352601A1 (ja) |
EP (1) | EP4080579A4 (ja) |
JP (1) | JP7415537B2 (ja) |
CN (1) | CN114830354A (ja) |
TW (1) | TWI750875B (ja) |
WO (1) | WO2021124649A1 (ja) |
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Citations (4)
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