JP7006573B2 - 単結晶引き上げ装置、および、シリコン単結晶の製造方法 - Google Patents

単結晶引き上げ装置、および、シリコン単結晶の製造方法 Download PDF

Info

Publication number
JP7006573B2
JP7006573B2 JP2018224843A JP2018224843A JP7006573B2 JP 7006573 B2 JP7006573 B2 JP 7006573B2 JP 2018224843 A JP2018224843 A JP 2018224843A JP 2018224843 A JP2018224843 A JP 2018224843A JP 7006573 B2 JP7006573 B2 JP 7006573B2
Authority
JP
Japan
Prior art keywords
single crystal
pulling device
crystal pulling
chamber
purge tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018224843A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020083735A (ja
Inventor
裕 早川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2018224843A priority Critical patent/JP7006573B2/ja
Priority to TW108126505A priority patent/TWI715122B/zh
Priority to KR1020190151644A priority patent/KR102315979B1/ko
Priority to CN201911202817.6A priority patent/CN111501088B/zh
Publication of JP2020083735A publication Critical patent/JP2020083735A/ja
Application granted granted Critical
Publication of JP7006573B2 publication Critical patent/JP7006573B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2018224843A 2018-11-30 2018-11-30 単結晶引き上げ装置、および、シリコン単結晶の製造方法 Active JP7006573B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018224843A JP7006573B2 (ja) 2018-11-30 2018-11-30 単結晶引き上げ装置、および、シリコン単結晶の製造方法
TW108126505A TWI715122B (zh) 2018-11-30 2019-07-26 驅氣管、單晶提拉裝置、及矽單晶的製造方法
KR1020190151644A KR102315979B1 (ko) 2018-11-30 2019-11-22 퍼지 튜브, 단결정 인상 장치 및 실리콘 단결정의 제조 방법
CN201911202817.6A CN111501088B (zh) 2018-11-30 2019-11-29 吹扫管、单晶提拉装置及硅单晶的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018224843A JP7006573B2 (ja) 2018-11-30 2018-11-30 単結晶引き上げ装置、および、シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
JP2020083735A JP2020083735A (ja) 2020-06-04
JP7006573B2 true JP7006573B2 (ja) 2022-01-24

Family

ID=70906374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018224843A Active JP7006573B2 (ja) 2018-11-30 2018-11-30 単結晶引き上げ装置、および、シリコン単結晶の製造方法

Country Status (4)

Country Link
JP (1) JP7006573B2 (zh)
KR (1) KR102315979B1 (zh)
CN (1) CN111501088B (zh)
TW (1) TWI715122B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12037698B2 (en) * 2022-01-06 2024-07-16 Globalwafers Co., Ltd Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US11866845B2 (en) 2022-01-06 2024-01-09 Globalwafers Co., Ltd. Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001002489A (ja) 1999-06-17 2001-01-09 Mitsubishi Materials Corp 単結晶引上装置
JP2011246341A (ja) 2010-04-26 2011-12-08 Sumco Corp シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2795036B2 (ja) * 1992-02-04 1998-09-10 信越半導体株式会社 単結晶引上装置
JP2569053Y2 (ja) * 1992-10-09 1998-04-22 コマツ電子金属株式会社 半導体単結晶製造装置
JP3203342B2 (ja) * 1993-03-25 2001-08-27 ワッカー・エヌエスシーイー株式会社 単結晶体の製造装置
JP4097729B2 (ja) * 1996-05-22 2008-06-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置
JP3838013B2 (ja) * 2000-09-26 2006-10-25 信越半導体株式会社 シリコン単結晶の製造方法
EP1356139B1 (en) * 2001-01-26 2006-08-09 MEMC Electronic Materials, Inc. Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
JP4734139B2 (ja) * 2006-02-27 2011-07-27 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 位置測定方法
JP5664573B2 (ja) * 2012-02-21 2015-02-04 信越半導体株式会社 シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
KR101554394B1 (ko) * 2013-12-19 2015-09-18 주식회사 엘지실트론 잉곳의 성장공정을 관찰하기 위한 뷰 포트 및 이를 포함하는 잉곳성장장치
JP6390579B2 (ja) * 2015-10-19 2018-09-19 信越半導体株式会社 単結晶の製造方法
JP6202119B2 (ja) * 2016-03-14 2017-09-27 株式会社Sumco シリコン単結晶の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001002489A (ja) 1999-06-17 2001-01-09 Mitsubishi Materials Corp 単結晶引上装置
JP2011246341A (ja) 2010-04-26 2011-12-08 Sumco Corp シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法

Also Published As

Publication number Publication date
KR102315979B1 (ko) 2021-10-21
CN111501088B (zh) 2022-06-17
CN111501088A (zh) 2020-08-07
JP2020083735A (ja) 2020-06-04
KR20200066193A (ko) 2020-06-09
TWI715122B (zh) 2021-01-01
TW202022171A (zh) 2020-06-16

Similar Documents

Publication Publication Date Title
JP5708171B2 (ja) シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法
KR102157388B1 (ko) 실리콘 단결정 제조 방법 및 장치
CN107923065B (zh) 单晶的制造方法及装置
KR101289400B1 (ko) 실리콘 단결정의 제조방법
JP7006573B2 (ja) 単結晶引き上げ装置、および、シリコン単結晶の製造方法
TW201634764A (zh) 單結晶之製造方法
TWI770661B (zh) 單結晶製造裝置及單結晶的製造方法
JP6465008B2 (ja) シリコン単結晶の製造方法
US7374614B2 (en) Method for manufacturing single crystal semiconductor
JP2019085299A (ja) 単結晶の製造方法及び装置
TW201300590A (zh) 用於晶體生長裝置之自動檢視系統
JP5409215B2 (ja) 単結晶引上装置
JP6645406B2 (ja) 単結晶の製造方法
WO2002027077A1 (fr) Procede de fabrication d'un monocristal en silicium et dispositif de fabrication d'un monocristal semiconducteur
WO2022075061A1 (ja) 単結晶の製造方法
JP4109843B2 (ja) 単結晶引き上げ装置および引き上げ方法
JP2008189523A (ja) 単結晶の製造方法
JP4815766B2 (ja) シリコン単結晶製造装置及び製造方法
WO2023033111A1 (ja) 単結晶の製造方法及び単結晶製造装置
KR102147459B1 (ko) 단결정 잉곳 성장 장치 및 단결정 잉곳 성장 방법
JP2001072492A (ja) 単結晶引上装置
JP2024038702A (ja) シリコン単結晶の製造システム及び製造方法
CN116438333A (zh) 单晶的制造方法、磁场产生装置及单晶制造装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201203

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210826

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210914

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211108

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211220

R150 Certificate of patent or registration of utility model

Ref document number: 7006573

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150