JP4734139B2 - 位置測定方法 - Google Patents
位置測定方法 Download PDFInfo
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- JP4734139B2 JP4734139B2 JP2006050299A JP2006050299A JP4734139B2 JP 4734139 B2 JP4734139 B2 JP 4734139B2 JP 2006050299 A JP2006050299 A JP 2006050299A JP 2006050299 A JP2006050299 A JP 2006050299A JP 4734139 B2 JP4734139 B2 JP 4734139B2
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- Prior art keywords
- light
- reflected
- melt
- heat shield
- measurement
- Prior art date
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- 238000000691 measurement method Methods 0.000 title description 19
- 239000000155 melt Substances 0.000 claims description 97
- 239000013078 crystal Substances 0.000 claims description 30
- 239000007788 liquid Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 238000005259 measurement Methods 0.000 description 58
- 238000001028 reflection method Methods 0.000 description 27
- 238000010586 diagram Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000002994 raw material Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/46—Indirect determination of position data
- G01S17/48—Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
- G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
- G01F23/28—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring the variations of parameters of electromagnetic or acoustic waves applied directly to the liquid or fluent solid material
- G01F23/284—Electromagnetic waves
- G01F23/292—Light, e.g. infrared or ultraviolet
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F23/00—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm
- G01F23/22—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water
- G01F23/28—Indicating or measuring liquid level or level of fluent solid material, e.g. indicating in terms of volume or indicating by means of an alarm by measuring physical variables, other than linear dimensions, pressure or weight, dependent on the level to be measured, e.g. by difference of heat transfer of steam or water by measuring the variations of parameters of electromagnetic or acoustic waves applied directly to the liquid or fluent solid material
- G01F23/284—Electromagnetic waves
- G01F23/292—Light, e.g. infrared or ultraviolet
- G01F23/2921—Light, e.g. infrared or ultraviolet for discrete levels
- G01F23/2928—Light, e.g. infrared or ultraviolet for discrete levels using light reflected on the material surface
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Thermal Sciences (AREA)
- Fluid Mechanics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measurement Of Optical Distance (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
Description
距離Mから熱遮蔽物の下面6の位置を求めることができる。
前記測定箇所近傍に部材を設け、
前記出射光を、前記部材により反射させ、反射させた反射光を前記測定箇所に投射し、前記測定箇所で反射した反射光を前記受光器で受光するか、または前記出射光を前記測定箇所に投射し、前記測定箇所で反射した反射光を、前記部材により反射させ、反射させた反射光を前記受光器で受光すること
を特徴としている。
前記融液液面近傍に部材を設け、
前記出射光を、前記部材により反射させ、反射させた反射光を前記融液液面に投射し、前記融液液面で反射した反射光を前記受光器で受光するか、または前記出射光を前記融液液面に投射し、前記融液液面で反射した反射光を、前記部材により反射させ、反射させた反射光を前記受光器で受光すること
を特徴としている。
本発明は良であり、直接反射法は優である。なお、折り返し反射法は行っていない。
本発明は優であるが、直接反射法は不可であり、折り返し反射法は可である。
本発明および折り返し反射法は可であり、直接反射法は不可である。
本発明は可であり、直接反射法および折り返し反射法は不可である。
D 熱遮蔽物の下端部の内周と引き上げ単結晶の周壁との間隔
L 熱遮蔽物の下面と融液液面との間隔
1 CZ炉
2 るつぼ
3 シリコン原料
4 シリコン単結晶
5 熱遮蔽物
7 融液液面
8 距離測定ユニット
9 回転ミラー
10 入射窓
11 プリズム
12 レーザ光源
13 受光器
13b 1次元CCDセンサ
Claims (2)
- 光源と受光器とを備え、前記光源から出射した出射光をチョクラルスキー炉内の融液液面に投射し、この融液液面で反射した反射光を前記受光器で受光し、三角測量の原理に基づいて、前記融液液面の液面レベルを測定する位置測定方法において、
前記チョクラルスキー炉内部の単結晶の外側に熱遮蔽物が配置され、
前記光源から出射した前記出射光を、前記熱遮蔽物と前記単結晶との間を介して前記熱遮蔽物の下端部の内周側面に入射させ、前記熱遮蔽物の前記下端部内周側面で反射した反射光を前記融液液面に投射し、前記融液液面で反射した反射光を、前記受光器で受光するか、または、
前記光源から出射した前記出射光を、前記熱遮蔽物と前記単結晶との間を介して前記融液液面に投射し、前記融液液面で反射した反射光を、前記熱遮蔽物の前記下端部内周側面に入射させ、前記熱遮蔽物の前記下端部内周側面で反射した反射光を、前記受光器で受光すること
を特徴とする位置測定方法。 - 回転ミラーを回転させて、前記光源から出射した前記出射光をチョクラルスキー炉内のるつぼの径方向にスキャンすることで、前記出射光を、前記熱遮蔽物と前記単結晶との間を介して前記熱遮蔽物の前記下端部内周側面に入射させるか、または、前記出射光を、前記熱遮蔽物と前記単結晶との間を介して前記融液液面に投射し、前記融液液面で反射した反射光を、前記熱遮蔽物の前記下端部内周側面に入射させるようにすること
を特徴とする請求項1記載の位置測定方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006050299A JP4734139B2 (ja) | 2006-02-27 | 2006-02-27 | 位置測定方法 |
TW095137537A TW200732521A (en) | 2006-02-27 | 2006-10-12 | Position measuring method |
PCT/JP2006/321992 WO2007097071A1 (ja) | 2006-02-27 | 2006-11-02 | 位置測定方法 |
DE112006003772.2T DE112006003772B4 (de) | 2006-02-27 | 2006-11-02 | Positionsmessverfahren |
US12/224,467 US8130386B1 (en) | 2006-02-27 | 2006-11-02 | Position measuring method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006050299A JP4734139B2 (ja) | 2006-02-27 | 2006-02-27 | 位置測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007223879A JP2007223879A (ja) | 2007-09-06 |
JP4734139B2 true JP4734139B2 (ja) | 2011-07-27 |
Family
ID=38437127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006050299A Active JP4734139B2 (ja) | 2006-02-27 | 2006-02-27 | 位置測定方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8130386B1 (ja) |
JP (1) | JP4734139B2 (ja) |
DE (1) | DE112006003772B4 (ja) |
TW (1) | TW200732521A (ja) |
WO (1) | WO2007097071A1 (ja) |
Families Citing this family (17)
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JP5194295B2 (ja) * | 2007-08-24 | 2013-05-08 | Sumco Techxiv株式会社 | Cz法による単結晶引き上げ装置内の液面レベル測定方法 |
JP5181178B2 (ja) | 2007-09-12 | 2013-04-10 | Sumco Techxiv株式会社 | 半導体単結晶製造装置における位置計測装置および位置計測方法 |
DE112009000239B4 (de) * | 2008-02-18 | 2021-01-28 | Sumco Corporation | Silizium-Einkristall-Züchtungsvorrichtung |
CN101988845B (zh) * | 2010-07-30 | 2012-04-18 | 西安理工大学 | 采用激光曲面镜反射进行熔硅液位检测的装置及检测方法 |
GB2509716B (en) | 2013-01-09 | 2018-07-04 | International Moisture Analysers Ltd | Spatial Interference Fourier Transform Raman chemical analyser |
CN103464694B (zh) * | 2013-08-29 | 2016-02-24 | 西安理工大学 | 一种用于镁合金铸造的液位检测装置及其检测方法 |
KR101516586B1 (ko) * | 2013-09-16 | 2015-05-04 | 주식회사 엘지실트론 | 열차폐재 및 이를 포함하는 실리콘 단결정 잉곳 제조장치 |
CN103628131B (zh) * | 2013-12-06 | 2016-05-04 | 西安德伍拓自动化传动系统有限公司 | 一种单晶硅拉晶炉的熔融硅液面检测方法及测量装置 |
CN104005083B (zh) * | 2014-05-20 | 2016-06-29 | 北京工业大学 | 一种测量单晶炉熔硅液面高度的装置与方法 |
EP3018483B1 (en) | 2014-11-07 | 2018-08-01 | photrack AG | Method and system for determining the velocity and level of a moving fluid surface |
JP6930294B2 (ja) * | 2017-08-30 | 2021-09-01 | 住友金属鉱山株式会社 | 結晶育成装置及び単結晶の製造方法 |
JP6812931B2 (ja) * | 2017-09-06 | 2021-01-13 | 株式会社Sumco | 液面レベル検出装置の調整用治具および調整方法 |
TWI645166B (zh) * | 2018-01-19 | 2018-12-21 | 友達晶材股份有限公司 | 液面高度檢測系統及液面高度檢測方法 |
JP7006573B2 (ja) * | 2018-11-30 | 2022-01-24 | 株式会社Sumco | 単結晶引き上げ装置、および、シリコン単結晶の製造方法 |
CN112522779A (zh) * | 2020-11-18 | 2021-03-19 | 上海新昇半导体科技有限公司 | 液位测量方法及拉单晶方法 |
CN112813492A (zh) * | 2020-12-23 | 2021-05-18 | 上海新昇半导体科技有限公司 | 一种用于晶体生长的液面检测装置及晶体生长装置 |
CN114993151A (zh) * | 2022-05-18 | 2022-09-02 | 西安奕斯伟材料科技有限公司 | 测量装置和测量方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63292015A (ja) * | 1987-05-26 | 1988-11-29 | Rikagaku Kenkyusho | 光学的距離検出装置撮像光学系の構成 |
JPH0642914A (ja) * | 1992-07-24 | 1994-02-18 | Canon Inc | 変位測定装置 |
JPH06281415A (ja) * | 1993-03-29 | 1994-10-07 | Anritsu Corp | 変位測定装置 |
JPH07243911A (ja) * | 1994-03-04 | 1995-09-19 | Sumitomo Metal Ind Ltd | 融液表面の温度測定装置及びその測定方法 |
JP2000258227A (ja) * | 1999-03-12 | 2000-09-22 | Shinkawa Denki Kk | 鏡面、非鏡面物における表面の変位測定装置 |
JP2000264779A (ja) * | 1999-03-17 | 2000-09-26 | Komatsu Electronic Metals Co Ltd | メルトレベル検出装置及び検出方法 |
WO2001083859A1 (fr) * | 2000-05-01 | 2001-11-08 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Procede et appareil de mesure du niveau de bain de fusion |
JP2002013966A (ja) * | 2000-06-28 | 2002-01-18 | Shin Etsu Handotai Co Ltd | 融液面位置測定方法及び装置並びに単結晶製造方法及び装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4123336A1 (de) | 1991-07-15 | 1993-01-21 | Leybold Ag | Kristallziehverfahren und vorrichtung zu seiner durchfuehrung |
US5286461A (en) | 1991-09-20 | 1994-02-15 | Ferrofluidics Corporation | Method and apparatus for melt level detection in czochralski crystal growth systems |
JP2627695B2 (ja) | 1992-01-17 | 1997-07-09 | コマツ電子金属株式会社 | Cz法における融液レベル制御装置および制御方法 |
JP2627696B2 (ja) | 1992-01-17 | 1997-07-09 | コマツ電子金属株式会社 | Cz法における融液レベル制御装置および制御方法 |
JP2816627B2 (ja) | 1992-04-17 | 1998-10-27 | コマツ電子金属株式会社 | 半導体単結晶製造装置の融液面位置測定・制御装置 |
DE4231162C2 (de) | 1992-09-17 | 1996-03-14 | Wacker Siltronic Halbleitermat | Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen |
JP2823035B2 (ja) | 1993-02-10 | 1998-11-11 | 信越半導体株式会社 | 半導体単結晶の引上装置及び引上方法 |
JP3129571B2 (ja) | 1993-04-28 | 2001-01-31 | コマツ電子金属株式会社 | Cz法における融液レベル制御装置 |
US6071340A (en) | 1996-02-28 | 2000-06-06 | General Signal Technology Corporation | Apparatus for melt-level detection in Czochralski crystal growth systems |
US5882402A (en) | 1997-09-30 | 1999-03-16 | Memc Electronic Materials, Inc. | Method for controlling growth of a silicon crystal |
-
2006
- 2006-02-27 JP JP2006050299A patent/JP4734139B2/ja active Active
- 2006-10-12 TW TW095137537A patent/TW200732521A/zh unknown
- 2006-11-02 US US12/224,467 patent/US8130386B1/en active Active
- 2006-11-02 WO PCT/JP2006/321992 patent/WO2007097071A1/ja active Application Filing
- 2006-11-02 DE DE112006003772.2T patent/DE112006003772B4/de active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63292015A (ja) * | 1987-05-26 | 1988-11-29 | Rikagaku Kenkyusho | 光学的距離検出装置撮像光学系の構成 |
JPH0642914A (ja) * | 1992-07-24 | 1994-02-18 | Canon Inc | 変位測定装置 |
JPH06281415A (ja) * | 1993-03-29 | 1994-10-07 | Anritsu Corp | 変位測定装置 |
JPH07243911A (ja) * | 1994-03-04 | 1995-09-19 | Sumitomo Metal Ind Ltd | 融液表面の温度測定装置及びその測定方法 |
JP2000258227A (ja) * | 1999-03-12 | 2000-09-22 | Shinkawa Denki Kk | 鏡面、非鏡面物における表面の変位測定装置 |
JP2000264779A (ja) * | 1999-03-17 | 2000-09-26 | Komatsu Electronic Metals Co Ltd | メルトレベル検出装置及び検出方法 |
WO2001083859A1 (fr) * | 2000-05-01 | 2001-11-08 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Procede et appareil de mesure du niveau de bain de fusion |
JP2002013966A (ja) * | 2000-06-28 | 2002-01-18 | Shin Etsu Handotai Co Ltd | 融液面位置測定方法及び装置並びに単結晶製造方法及び装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200732521A (en) | 2007-09-01 |
WO2007097071A1 (ja) | 2007-08-30 |
JP2007223879A (ja) | 2007-09-06 |
US8130386B1 (en) | 2012-03-06 |
DE112006003772T5 (de) | 2009-01-02 |
DE112006003772B4 (de) | 2017-07-13 |
TWI337630B (ja) | 2011-02-21 |
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