JP7002431B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP7002431B2
JP7002431B2 JP2018190723A JP2018190723A JP7002431B2 JP 7002431 B2 JP7002431 B2 JP 7002431B2 JP 2018190723 A JP2018190723 A JP 2018190723A JP 2018190723 A JP2018190723 A JP 2018190723A JP 7002431 B2 JP7002431 B2 JP 7002431B2
Authority
JP
Japan
Prior art keywords
voltage
circuit
gate
drive circuit
igbt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018190723A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020061429A (ja
JP2020061429A5 (cg-RX-API-DMAC7.html
Inventor
克己 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2018190723A priority Critical patent/JP7002431B2/ja
Priority to US16/559,391 priority patent/US10720918B2/en
Priority to CN201910918651.1A priority patent/CN111030431B/zh
Priority to DE102019215250.3A priority patent/DE102019215250A1/de
Publication of JP2020061429A publication Critical patent/JP2020061429A/ja
Publication of JP2020061429A5 publication Critical patent/JP2020061429A5/ja
Application granted granted Critical
Publication of JP7002431B2 publication Critical patent/JP7002431B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/40—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC
    • H02M5/42—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters
    • H02M5/44—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC
    • H02M5/443—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M5/45—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into DC by static converters using discharge tubes or semiconductor devices to convert the intermediate DC into AC using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
    • H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
    • H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/145—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/155—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/162—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
    • H02M7/1623—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration with control circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H02M7/53873—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with digital control
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/491—Vertical IGBTs having both emitter contacts and collector contacts in the same substrate side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0063—High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0072—Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2018190723A 2018-10-09 2018-10-09 半導体装置 Active JP7002431B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018190723A JP7002431B2 (ja) 2018-10-09 2018-10-09 半導体装置
US16/559,391 US10720918B2 (en) 2018-10-09 2019-09-03 Semiconductor device
CN201910918651.1A CN111030431B (zh) 2018-10-09 2019-09-26 半导体装置
DE102019215250.3A DE102019215250A1 (de) 2018-10-09 2019-10-02 Halbleitervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018190723A JP7002431B2 (ja) 2018-10-09 2018-10-09 半導体装置

Publications (3)

Publication Number Publication Date
JP2020061429A JP2020061429A (ja) 2020-04-16
JP2020061429A5 JP2020061429A5 (cg-RX-API-DMAC7.html) 2020-12-10
JP7002431B2 true JP7002431B2 (ja) 2022-01-20

Family

ID=69886345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018190723A Active JP7002431B2 (ja) 2018-10-09 2018-10-09 半導体装置

Country Status (4)

Country Link
US (1) US10720918B2 (cg-RX-API-DMAC7.html)
JP (1) JP7002431B2 (cg-RX-API-DMAC7.html)
CN (1) CN111030431B (cg-RX-API-DMAC7.html)
DE (1) DE102019215250A1 (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3993249A1 (en) * 2020-10-28 2022-05-04 NXP USA, Inc. Advanced power supply to insure safe behavior of an inverter application
JP7444027B2 (ja) * 2020-11-06 2024-03-06 三菱電機株式会社 半導体装置
JP7722648B2 (ja) * 2020-12-04 2025-08-13 国立大学法人 東京大学 半導体装置
JP7578356B2 (ja) * 2021-09-01 2024-11-06 ミネベアパワーデバイス株式会社 駆動回路および電力変換装置
JP2024174702A (ja) * 2023-06-05 2024-12-17 ミネベアパワーデバイス株式会社 駆動回路

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002507058A (ja) 1998-03-09 2002-03-05 ハリス コーポレイション 低温直接ボンディングにより形成可能な装置
JP2003101391A (ja) 2001-07-19 2003-04-04 Mitsubishi Electric Corp 半導体装置
JP2005340624A (ja) 2004-05-28 2005-12-08 Fuji Electric Device Technology Co Ltd 半導体集積回路装置
JP2006073775A (ja) 2004-09-02 2006-03-16 Matsushita Electric Ind Co Ltd 半導体装置及びそれを用いたモジュール
JP2016039477A (ja) 2014-08-07 2016-03-22 株式会社デンソー 駆動制御装置
JP2017135255A (ja) 2016-01-27 2017-08-03 株式会社デンソー 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2624809B2 (ja) 1988-12-06 1997-06-25 株式会社東芝 ダブルゲートｉｇｂｔのゲート駆動回路
JP3302725B2 (ja) * 1991-08-26 2002-07-15 株式会社東芝 電力用半導体集積回路装置
DE69332443T2 (de) * 1992-05-01 2003-06-26 Fuji Electric Co., Ltd. Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate
JPH11205123A (ja) * 1998-01-20 1999-07-30 Toshiba Corp 高耐圧パワー集積回路
JP2002100971A (ja) 2000-09-22 2002-04-05 Toshiba Corp ダブルゲートｉｇｂｔの駆動方法
JP2011182591A (ja) * 2010-03-02 2011-09-15 Panasonic Corp 半導体装置
JP5828093B2 (ja) * 2010-10-25 2015-12-02 パナソニックＩｐマネジメント株式会社 電源装置
WO2014181450A1 (ja) * 2013-05-10 2014-11-13 株式会社 日立製作所 絶縁ゲート型半導体素子の制御装置およびそれを用いた電力変換装置
WO2016031052A1 (ja) * 2014-08-29 2016-03-03 三菱電機株式会社 半導体装置及び多相用半導体装置
JP6413965B2 (ja) * 2015-07-20 2018-10-31 株式会社デンソー 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002507058A (ja) 1998-03-09 2002-03-05 ハリス コーポレイション 低温直接ボンディングにより形成可能な装置
JP2003101391A (ja) 2001-07-19 2003-04-04 Mitsubishi Electric Corp 半導体装置
JP2005340624A (ja) 2004-05-28 2005-12-08 Fuji Electric Device Technology Co Ltd 半導体集積回路装置
JP2006073775A (ja) 2004-09-02 2006-03-16 Matsushita Electric Ind Co Ltd 半導体装置及びそれを用いたモジュール
JP2016039477A (ja) 2014-08-07 2016-03-22 株式会社デンソー 駆動制御装置
JP2017135255A (ja) 2016-01-27 2017-08-03 株式会社デンソー 半導体装置

Also Published As

Publication number Publication date
JP2020061429A (ja) 2020-04-16
US10720918B2 (en) 2020-07-21
CN111030431A (zh) 2020-04-17
CN111030431B (zh) 2023-06-09
DE102019215250A1 (de) 2020-04-09
US20200112307A1 (en) 2020-04-09

Similar Documents

Publication Publication Date Title
JP7002431B2 (ja) 半導体装置
CN101414816B (zh) 具有内置二极管的igbt器件和具有内置二极管的dmos器件
JP5267616B2 (ja) 駆動制御装置
US9041456B2 (en) Power semiconductor device
US9595602B2 (en) Switching device for power conversion and power conversion device
US9966870B2 (en) Power conversion device and drive device
JP5284077B2 (ja) 半導体装置ならびにそれを用いた電力変換装置
CN110289842A (zh) 半导体装置
JPWO2017141560A1 (ja) 絶縁ゲート半導体装置
JPWO2017221417A1 (ja) ゲート駆動回路、電力変換装置および鉄道車両
JP5542719B2 (ja) 電力用半導体素子の駆動保護回路
JP5534076B2 (ja) 駆動制御装置
JP2014013798A (ja) ワンチップイグナイタ及び内燃機関点火装置
US11606090B2 (en) Semiconductor device
JP7196044B2 (ja) 半導体装置および電力変換装置
KR20040010128A (ko) 파워모듈의 게이트 구동회로
JP2019088078A (ja) ドライバ回路および電力変換装置
JP6840053B2 (ja) 半導体電力変換回路、並びにそれを用いた半導体装置及びモータ駆動装置
JP7551916B2 (ja) ゲート駆動回路、電力変換装置
US12191790B2 (en) Power module with protection circuit
WO2019054078A1 (ja) パワーモジュール、逆導通ｉｇｂｔ、及びドライブ回路
JP2014013797A (ja) ワンチップイグナイタ及び内燃機関点火装置
US11373997B2 (en) High voltage integrated circuit device employing element separation method using high voltage junction
WO2024057598A1 (ja) 半導体スイッチング素子のゲート駆動回路、電動機制御システムおよび半導体装置
WO2025182389A1 (ja) 半導体装置の駆動回路および電力変換装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201027

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201027

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211022

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211130

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211227

R150 Certificate of patent or registration of utility model

Ref document number: 7002431

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250