DE69332443T2 - Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate - Google Patents

Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate

Info

Publication number
DE69332443T2
DE69332443T2 DE1993632443 DE69332443T DE69332443T2 DE 69332443 T2 DE69332443 T2 DE 69332443T2 DE 1993632443 DE1993632443 DE 1993632443 DE 69332443 T DE69332443 T DE 69332443T DE 69332443 T2 DE69332443 T2 DE 69332443T2
Authority
DE
Germany
Prior art keywords
double gate
gate semiconductor
control device
semiconductor device
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1993632443
Other languages
English (en)
Other versions
DE69332443D1 (de
Inventor
Noriho Terasawa
Tadashi Miyasaka
Akira Nishiura
Masaharu Nishiura
Kenya Sakurai
Masahito Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE69332443D1 publication Critical patent/DE69332443D1/de
Application granted granted Critical
Publication of DE69332443T2 publication Critical patent/DE69332443T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors
DE1993632443 1992-05-01 1993-04-28 Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate Expired - Fee Related DE69332443T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11276392 1992-05-01
JP22679392 1992-08-26

Publications (2)

Publication Number Publication Date
DE69332443D1 DE69332443D1 (de) 2002-11-28
DE69332443T2 true DE69332443T2 (de) 2003-06-26

Family

ID=26451853

Family Applications (3)

Application Number Title Priority Date Filing Date
DE1993627071 Expired - Fee Related DE69327071T2 (de) 1992-05-01 1993-04-28 Steuerschaltung für eine Halbleitervorrichtung mit zwei Steuereingängen
DE1993632388 Expired - Fee Related DE69332388T2 (de) 1992-05-01 1993-04-28 Steuerungsvorrichtung für Halbleitervorrichtung mit doppeltem Gate
DE1993632443 Expired - Fee Related DE69332443T2 (de) 1992-05-01 1993-04-28 Steuervorrichtung für Halbleitervorrichtung mit doppeltem Gate

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE1993627071 Expired - Fee Related DE69327071T2 (de) 1992-05-01 1993-04-28 Steuerschaltung für eine Halbleitervorrichtung mit zwei Steuereingängen
DE1993632388 Expired - Fee Related DE69332388T2 (de) 1992-05-01 1993-04-28 Steuerungsvorrichtung für Halbleitervorrichtung mit doppeltem Gate

Country Status (2)

Country Link
EP (3) EP0848497B1 (de)
DE (3) DE69327071T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3070360B2 (ja) * 1993-10-28 2000-07-31 富士電機株式会社 ダブルゲ−ト型半導体装置の制御装置
US5561393A (en) * 1992-02-03 1996-10-01 Fuji Electric Co., Ltd. Control device of semiconductor power device
GB9610098D0 (en) * 1996-05-15 1996-07-17 Palmer Patrick R Insulated gate bipolar transistor control
DE112013006912B4 (de) 2013-05-10 2022-10-13 Hitachi, Ltd. Vorrichtung zum Steuern eines Halbleiterelements mit isolierendem Gate und Leistungswandlungsvorrichtung, welche die Vorrichtung zum Steuern des Halbleiterelements mit isolierendem Gate verwendet
JP7002431B2 (ja) * 2018-10-09 2022-01-20 三菱電機株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126260A (ja) * 1984-07-16 1986-02-05 Meidensha Electric Mfg Co Ltd Ｇｔｏサイリスタ
US4821083A (en) * 1986-09-30 1989-04-11 Kabushiki Kaisha Toshiba Thyristor drive system
DE3855922T2 (de) * 1987-02-26 1998-01-02 Toshiba Kawasaki Kk An-Steuertechnik für Thyristor mit isolierter Steuerelektrode
JPH01270352A (ja) * 1988-04-22 1989-10-27 Toshiba Corp ゲートターンオフサイリスタおよびその駆動方法
JPH0421211A (ja) * 1990-05-16 1992-01-24 Toshiba Corp 半導体素子の駆動方法およびその駆動装置

Also Published As

Publication number Publication date
DE69327071D1 (de) 1999-12-30
DE69327071T2 (de) 2000-05-25
EP0848497A2 (de) 1998-06-17
EP0568353A1 (de) 1993-11-03
DE69332388D1 (de) 2002-11-14
EP0568353B1 (de) 1999-11-24
EP0848497A3 (de) 1998-12-09
DE69332443D1 (de) 2002-11-28
EP0854575A3 (de) 1998-12-09
EP0848497B1 (de) 2002-10-23
EP0854575A2 (de) 1998-07-22
DE69332388T2 (de) 2003-06-12
EP0854575B1 (de) 2002-10-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee