DE69306340D1 - Gateverdrahtung für DMOSFET - Google Patents

Gateverdrahtung für DMOSFET

Info

Publication number
DE69306340D1
DE69306340D1 DE69306340T DE69306340T DE69306340D1 DE 69306340 D1 DE69306340 D1 DE 69306340D1 DE 69306340 T DE69306340 T DE 69306340T DE 69306340 T DE69306340 T DE 69306340T DE 69306340 D1 DE69306340 D1 DE 69306340D1
Authority
DE
Germany
Prior art keywords
dmosfet
gate wiring
wiring
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69306340T
Other languages
English (en)
Other versions
DE69306340T2 (de
Inventor
Tatsuo Yoneda
Kazuaki Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69306340D1 publication Critical patent/DE69306340D1/de
Application granted granted Critical
Publication of DE69306340T2 publication Critical patent/DE69306340T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
DE69306340T 1992-09-10 1993-09-10 Gateverdrahtung für DMOSFET Expired - Lifetime DE69306340T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24164792A JP3150443B2 (ja) 1992-09-10 1992-09-10 半導体装置

Publications (2)

Publication Number Publication Date
DE69306340D1 true DE69306340D1 (de) 1997-01-16
DE69306340T2 DE69306340T2 (de) 1997-04-30

Family

ID=17077430

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69306340T Expired - Lifetime DE69306340T2 (de) 1992-09-10 1993-09-10 Gateverdrahtung für DMOSFET

Country Status (5)

Country Link
US (1) US5420450A (de)
EP (1) EP0587176B1 (de)
JP (1) JP3150443B2 (de)
KR (1) KR970006538B1 (de)
DE (1) DE69306340T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640430A (en) * 1993-09-02 1997-06-17 Motorola, Inc. Method for detecting valid data in a data stream
JP3163910B2 (ja) * 1994-08-31 2001-05-08 富士電機株式会社 絶縁ゲート型サイリスタ
US5510281A (en) * 1995-03-20 1996-04-23 General Electric Company Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
US6096610A (en) * 1996-03-29 2000-08-01 Intel Corporation Transistor suitable for high voltage circuit
US5748025A (en) * 1996-03-29 1998-05-05 Intel Corporation Method and apparatus for providing high voltage with a low voltage CMOS integrated circuit
JPH10107061A (ja) * 1996-10-02 1998-04-24 Oki Electric Ind Co Ltd 半導体集積回路装置
FR2768858B1 (fr) * 1997-09-22 2001-10-12 Sgs Thomson Microelectronics Structure de plot de grille d'un transistor vertical de type mos ou igbt
US5981999A (en) * 1999-01-07 1999-11-09 Industrial Technology Research Institute Power trench DMOS with large active cell density
WO2003028108A1 (fr) * 2001-09-19 2003-04-03 Kabushiki Kaisha Toshiba Semi-conducteur et procede de fabrication

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5688362A (en) * 1979-12-19 1981-07-17 Toshiba Corp Vertical type power mos transistor
JPS57153468A (en) * 1981-03-18 1982-09-22 Toshiba Corp Insulated gate type field effect transistor
JPS5949056A (ja) * 1982-09-13 1984-03-21 Nippon Telegr & Teleph Corp <Ntt> フアクシミリ宛名書き発信蓄積変換方法
JPS60171771A (ja) * 1984-02-17 1985-09-05 Hitachi Ltd 絶縁ゲ−ト半導体装置
JPS6384070A (ja) * 1986-09-26 1988-04-14 Mitsubishi Electric Corp 電界効果型半導体装置
EP0279403A3 (de) * 1987-02-16 1988-12-07 Nec Corporation Vertikaler MOS-Feldeffekttransistor mit hoher Spannungsfestigkeit und hoher Schaltgeschwindigkeit
US4920388A (en) * 1987-02-17 1990-04-24 Siliconix Incorporated Power transistor with integrated gate resistor
JPS63252480A (ja) * 1987-04-09 1988-10-19 Mitsubishi Electric Corp 縦形モス電界効果トランジスタ
JPH0235780A (ja) * 1988-07-26 1990-02-06 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
JPH02143566A (ja) * 1988-11-25 1990-06-01 Toshiba Corp 二重拡散形絶縁ゲート電界効果トランジスタ
JPH0541523A (ja) * 1991-08-05 1993-02-19 Oki Electric Ind Co Ltd 半導体装置

Also Published As

Publication number Publication date
JP3150443B2 (ja) 2001-03-26
JPH0697451A (ja) 1994-04-08
DE69306340T2 (de) 1997-04-30
US5420450A (en) 1995-05-30
EP0587176A2 (de) 1994-03-16
EP0587176A3 (de) 1994-04-20
KR970006538B1 (en) 1997-04-29
EP0587176B1 (de) 1996-12-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition