JP6980202B2 - SiC容器 - Google Patents
SiC容器 Download PDFInfo
- Publication number
- JP6980202B2 JP6980202B2 JP2020099759A JP2020099759A JP6980202B2 JP 6980202 B2 JP6980202 B2 JP 6980202B2 JP 2020099759 A JP2020099759 A JP 2020099759A JP 2020099759 A JP2020099759 A JP 2020099759A JP 6980202 B2 JP6980202 B2 JP 6980202B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- container
- epitaxial layer
- tac
- base substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/063—Heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
2a 上容器
2b 下容器
3 SiC容器
3a 上容器
3b 下容器
11 高温真空炉
40 SiC基板
41 エピタキシャル層
45 多結晶SiCプレート
Claims (7)
- 加熱処理時にSi蒸気及びC蒸気を内部空間に発生させる容器であって、
Si雰囲気下で加熱することで、前記内部空間に配置された下地基板上に単結晶SiCのエピタキシャル層を成長させる、SiC容器。 - TaCを含む材料で構成され内側にSiの供給源が付与されたTaC容器内に配置して加熱することで、前記内部空間に配置された下地基板上に単結晶SiCのエピタキシャル層を成長させる、請求項1に記載のSiC容器。
- 多結晶SiCを含んで構成される、請求項1又は請求項2に記載のSiC容器。
- TaCを含む材料で構成され内側にSiの供給源が付与されたTaC容器の内部に、多結晶SiCを含む材料で構成されるSiC容器を収容し、当該SiC容器の内部に下地基板を収容した状態で、
当該TaC容器内がSi蒸気圧となるように、かつ、温度勾配を設けて前記TaC容器を加熱することで、
前記SiC容器の内面がエッチングされることで昇華したC原子と、雰囲気中のSi原子と、が結合することで、前記下地基板上に単結晶SiCのエピタキシャル層を成長させるエピタキシャル層成長工程を行うことを特徴とする気相エピタキシャル成長方法において用いられる、SiC容器。 - 前記内部空間は、加熱処理時に準閉鎖系となる、請求項1〜4の何れか一項に記載のSiC容器。
- 互いに嵌合可能な上容器と下容器とを備える、請求項1〜5の何れか一項に記載のSiC容器。
- 複数枚の前記下地基板を収容可能に構成されている、請求項1〜6の何れか一項に記載のSiC容器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016092073 | 2016-04-28 | ||
JP2016092073 | 2016-04-28 | ||
JP2018514703A JP6721904B2 (ja) | 2016-04-28 | 2017-04-27 | 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018514703A Division JP6721904B2 (ja) | 2016-04-28 | 2017-04-27 | 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020169120A JP2020169120A (ja) | 2020-10-15 |
JP6980202B2 true JP6980202B2 (ja) | 2021-12-15 |
Family
ID=60159696
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018514703A Active JP6721904B2 (ja) | 2016-04-28 | 2017-04-27 | 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法 |
JP2020099759A Active JP6980202B2 (ja) | 2016-04-28 | 2020-06-09 | SiC容器 |
JP2020099758A Active JP6980201B2 (ja) | 2016-04-28 | 2020-06-09 | SiC基板の製造装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018514703A Active JP6721904B2 (ja) | 2016-04-28 | 2017-04-27 | 気相エピタキシャル成長方法及びエピタキシャル層付き基板の製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020099758A Active JP6980201B2 (ja) | 2016-04-28 | 2020-06-09 | SiC基板の製造装置 |
Country Status (5)
Country | Link |
---|---|
US (4) | US11359307B2 (ja) |
EP (3) | EP3892762A1 (ja) |
JP (3) | JP6721904B2 (ja) |
CN (3) | CN114351248A (ja) |
WO (1) | WO2017188381A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3892762A1 (en) * | 2016-04-28 | 2021-10-13 | Kwansei Gakuin Educational Foundation | Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer |
EP3879010A4 (en) * | 2018-11-05 | 2022-07-13 | Kwansei Gakuin Educational Foundation | SIC SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCTION THEREOF AND DEVICE FOR PRODUCTION THEREOF |
WO2020095872A1 (ja) * | 2018-11-05 | 2020-05-14 | 学校法人関西学院 | SiC半導体基板及びその製造方法及びその製造装置 |
JP7242990B2 (ja) * | 2018-12-03 | 2023-03-22 | 株式会社レゾナック | SiC化学気相成長装置及びSiCエピタキシャルウェハの製造方法 |
EP3936645A4 (en) * | 2019-03-05 | 2022-11-09 | Kwansei Gakuin Educational Foundation | METHOD AND APPARATUS FOR MANUFACTURING A SIC SUBSTRATE, AND METHOD FOR REDUCING MACRO-LEVEL BUNTING IN A SIC SUBSTRATE |
CN114174566A (zh) * | 2019-03-05 | 2022-03-11 | 学校法人关西学院 | SiC衬底的制造方法及其制造装置和减少SiC衬底的加工变质层的方法 |
CN118087035A (zh) * | 2019-03-05 | 2024-05-28 | 学校法人关西学院 | 由SiC材料构成的主体容器 |
WO2020203517A1 (ja) * | 2019-03-29 | 2020-10-08 | 学校法人関西学院 | 大口径半導体基板に適用可能な半導体基板の製造装置 |
US20220189797A1 (en) * | 2019-03-29 | 2022-06-16 | Kwansei Gakuin Educational Foundation | Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate |
CN114174563A (zh) * | 2019-04-26 | 2022-03-11 | 学校法人关西学院 | SiC衬底的制造方法、其制造装置以及外延生长方法 |
TW202103257A (zh) * | 2019-04-26 | 2021-01-16 | 學校法人關西學院 | 半導體基板、半導體基板的製造方法、半導體基板的製造裝置以及磊晶成長方法 |
WO2021025077A1 (ja) * | 2019-08-06 | 2021-02-11 | 株式会社デンソー | SiC基板の製造方法 |
WO2021025085A1 (ja) * | 2019-08-06 | 2021-02-11 | 学校法人関西学院 | SiC基板、SiCエピタキシャル基板、SiCインゴット及びこれらの製造方法 |
CN114430781B (zh) * | 2019-08-06 | 2024-04-30 | 学校法人关西学院 | SiC籽晶、SiC晶锭、SiC晶片及它们的制造方法 |
WO2021025086A1 (ja) * | 2019-08-06 | 2021-02-11 | 学校法人関西学院 | SiC基板の製造方法 |
US11932967B2 (en) | 2019-09-27 | 2024-03-19 | Kwansei Gakuin Educational Foundation | SiC single crystal manufacturing method, SiC single crystal manufacturing device, and SiC single crystal wafer |
US20220344152A1 (en) * | 2019-09-27 | 2022-10-27 | Kwansei Gakuin Educational Foundation | Method for manufacturing sic substrate |
WO2021060365A1 (ja) * | 2019-09-27 | 2021-04-01 | 学校法人関西学院 | 半導体基板の製造方法及び半導体基板の製造装置 |
JPWO2021060366A1 (ja) * | 2019-09-27 | 2021-04-01 | ||
TWI748622B (zh) * | 2020-08-28 | 2021-12-01 | 李輝雄 | 有機物降解方法 |
CN113078047A (zh) * | 2021-03-30 | 2021-07-06 | 芜湖启迪半导体有限公司 | 键合Si衬底及其制备方法及制备Si/3C-SiC异质结构和3C-SiC薄膜的方法 |
CN114373972A (zh) * | 2022-01-14 | 2022-04-19 | 东莞富瑟尔科技有限公司 | 一种熔盐扩散复合装置及方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1458445A (en) * | 1974-02-21 | 1976-12-15 | Fiz Tekh Inst Ioffe | Method of producing epitaxial deposits of semiconductor silicon carbide |
US4649002A (en) * | 1985-04-01 | 1987-03-10 | Kennecott Corporation | System for preventing decomposition of silicon carbide articles during sintering |
US5679153A (en) | 1994-11-30 | 1997-10-21 | Cree Research, Inc. | Method for reducing micropipe formation in the epitaxial growth of silicon carbide and resulting silicon carbide structures |
KR100415422B1 (ko) | 1994-12-01 | 2004-03-18 | 지멘스 악티엔게젤샤프트 | 탄화규소단결정을승화성장시키기위한방법및장치 |
US5989340A (en) * | 1995-11-14 | 1999-11-23 | Siemens Aktiengesellschaft | Process and device for sublimation growing of silicon carbide monocrystals |
JP3550967B2 (ja) * | 1997-09-11 | 2004-08-04 | 富士電機ホールディングス株式会社 | 炭化けい素基板の熱処理方法 |
EP1026290B1 (en) * | 1997-09-12 | 2009-08-26 | Showa Denko Kabushiki Kaisha | Method and apparatus for producing silicon carbide single crystal |
JP2981879B2 (ja) * | 1998-03-06 | 1999-11-22 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
JP4482642B2 (ja) * | 2003-10-21 | 2010-06-16 | 学校法人関西学院 | 単結晶炭化ケイ素成長方法 |
JP4035136B2 (ja) * | 2004-02-04 | 2008-01-16 | 松下電器産業株式会社 | 種結晶の固定方法及びその固定方法を用いた単結晶の製造方法 |
US7323052B2 (en) * | 2005-03-24 | 2008-01-29 | Cree, Inc. | Apparatus and method for the production of bulk silicon carbide single crystals |
JP4954593B2 (ja) | 2006-04-18 | 2012-06-20 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板の製造方法、及び得られたエピタキシャル炭化珪素単結晶基板を用いてなるデバイス |
ITMI20062213A1 (it) * | 2006-11-20 | 2008-05-21 | Lpe Spa | Reattore per crescere cristalli |
JP5251015B2 (ja) * | 2007-06-27 | 2013-07-31 | 学校法人関西学院 | 熱処理装置及び熱処理方法 |
JP4521588B2 (ja) * | 2007-12-25 | 2010-08-11 | 株式会社エコトロン | 単結晶SiC膜の製造方法 |
JP5124402B2 (ja) * | 2008-09-10 | 2013-01-23 | 昭和電工株式会社 | 炭化珪素単結晶材の焼鈍方法 |
JP5564682B2 (ja) * | 2010-04-28 | 2014-07-30 | 学校法人関西学院 | 半導体素子の製造方法 |
JP2011243619A (ja) * | 2010-05-14 | 2011-12-01 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置 |
JP5561676B2 (ja) * | 2010-07-21 | 2014-07-30 | 学校法人関西学院 | SiC半導体ウエーハ熱処理装置 |
JP5948988B2 (ja) * | 2012-03-12 | 2016-07-06 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法 |
TWI600081B (zh) * | 2012-11-16 | 2017-09-21 | Toyo Tanso Co Ltd | Surface treatment method of single crystal silicon carbide substrate and single crystal silicon carbide substrate |
JP6093154B2 (ja) * | 2012-11-16 | 2017-03-08 | 東洋炭素株式会社 | 収容容器の製造方法 |
US8940614B2 (en) * | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
JP6226648B2 (ja) * | 2013-09-04 | 2017-11-08 | 昭和電工株式会社 | SiCエピタキシャルウェハの製造方法 |
US10753010B2 (en) * | 2014-09-25 | 2020-08-25 | Pallidus, Inc. | Vapor deposition apparatus and techniques using high puritiy polymer derived silicon carbide |
JP2017105697A (ja) * | 2015-11-26 | 2017-06-15 | 東洋炭素株式会社 | 薄型のSiCウエハの製造方法及び薄型のSiCウエハ |
EP3892762A1 (en) | 2016-04-28 | 2021-10-13 | Kwansei Gakuin Educational Foundation | Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer |
-
2017
- 2017-04-27 EP EP21176449.3A patent/EP3892762A1/en active Pending
- 2017-04-27 CN CN202111339283.9A patent/CN114351248A/zh active Pending
- 2017-04-27 EP EP17789663.6A patent/EP3450595B1/en active Active
- 2017-04-27 JP JP2018514703A patent/JP6721904B2/ja active Active
- 2017-04-27 WO PCT/JP2017/016738 patent/WO2017188381A1/ja active Application Filing
- 2017-04-27 US US16/096,475 patent/US11359307B2/en active Active
- 2017-04-27 CN CN201780026022.7A patent/CN109072478B/zh active Active
- 2017-04-27 EP EP21176448.5A patent/EP3892761A1/en active Pending
- 2017-04-27 CN CN202111338480.9A patent/CN114293247A/zh active Pending
-
2020
- 2020-06-09 JP JP2020099759A patent/JP6980202B2/ja active Active
- 2020-06-09 JP JP2020099758A patent/JP6980201B2/ja active Active
-
2022
- 2022-05-02 US US17/734,511 patent/US20220259759A1/en not_active Abandoned
- 2022-05-02 US US17/734,578 patent/US20220259760A1/en active Pending
-
2023
- 2023-10-17 US US18/380,897 patent/US20240044042A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20220259759A1 (en) | 2022-08-18 |
JP2020169120A (ja) | 2020-10-15 |
JP2020147499A (ja) | 2020-09-17 |
US20220259760A1 (en) | 2022-08-18 |
JPWO2017188381A1 (ja) | 2019-03-07 |
WO2017188381A1 (ja) | 2017-11-02 |
CN114293247A (zh) | 2022-04-08 |
CN109072478B (zh) | 2021-12-03 |
US20240044042A1 (en) | 2024-02-08 |
CN114351248A (zh) | 2022-04-15 |
EP3450595A4 (en) | 2019-12-04 |
JP6980201B2 (ja) | 2021-12-15 |
EP3892761A1 (en) | 2021-10-13 |
US20190136409A1 (en) | 2019-05-09 |
EP3450595A1 (en) | 2019-03-06 |
EP3892762A1 (en) | 2021-10-13 |
EP3450595B1 (en) | 2021-07-14 |
US11359307B2 (en) | 2022-06-14 |
JP6721904B2 (ja) | 2020-07-15 |
CN109072478A (zh) | 2018-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6980202B2 (ja) | SiC容器 | |
JP6311834B2 (ja) | 窒化物半導体基板の製造方法 | |
JP5464544B2 (ja) | エピタキシャル成長層付き単結晶SiC基板、炭素供給フィード基板、及び炭素ナノ材料付きSiC基板 | |
JP5360639B2 (ja) | 表面改質単結晶SiC基板、エピ成長層付き単結晶SiC基板、半導体チップ、単結晶SiC成長用種基板及び単結晶成長層付き多結晶SiC基板の製造方法 | |
JP2008037684A (ja) | 単結晶炭化ケイ素種結晶の液相生成方法及び単結晶炭化ケイ素種結晶、単結晶炭化ケイ素種結晶板の液相エピタキシャル生成方法及び単結晶炭化ケイ素種結晶板、単結晶炭化ケイ素種結晶基板の生成方法及び単結晶炭化ケイ素種結晶基板 | |
KR101910696B1 (ko) | 반도체 웨이퍼의 제조 방법 및 반도체 웨이퍼 | |
JP2011119412A (ja) | 半導体ウエハの製造方法 | |
JP4431643B2 (ja) | 単結晶炭化ケイ素成長方法 | |
JP4482642B2 (ja) | 単結晶炭化ケイ素成長方法 | |
JP5946124B2 (ja) | 半導体デバイスの製造方法 | |
JP5688780B2 (ja) | SiC基板、炭素供給フィード基板及び炭素ナノ材料付きSiC基板 | |
JP5164121B2 (ja) | 単結晶炭化ケイ素成長方法 | |
JP5376477B2 (ja) | 単結晶炭化ケイ素基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200609 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210225 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210316 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210514 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211012 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211105 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6980202 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |