GB1458445A - Method of producing epitaxial deposits of semiconductor silicon carbide - Google Patents

Method of producing epitaxial deposits of semiconductor silicon carbide

Info

Publication number
GB1458445A
GB1458445A GB784874A GB784874A GB1458445A GB 1458445 A GB1458445 A GB 1458445A GB 784874 A GB784874 A GB 784874A GB 784874 A GB784874 A GB 784874A GB 1458445 A GB1458445 A GB 1458445A
Authority
GB
United Kingdom
Prior art keywords
silicon carbide
seed crystals
source
cell
semiconductor silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB784874A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIZ TEKH INST IOFFE
Original Assignee
FIZ TEKH INST IOFFE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FIZ TEKH INST IOFFE filed Critical FIZ TEKH INST IOFFE
Priority to GB784874A priority Critical patent/GB1458445A/en
Publication of GB1458445A publication Critical patent/GB1458445A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1458445 Silicon carbide FIZIKO-TEKH INST IM AF LOFFE AKAD NAUK SSSR 21 Feb 1974 7848/74 Heading C1A Epitaxial silicon carbide is produced by subliming a silicon carbide source which forms the wall of a cell and depositing the vapour on seed crystals of silicon carbide carried on an opposing wall of the cell at a temperature of 1600‹ to 2400‹ C. and a pressure of one atmosphere to 10<SP>-5</SP> mmHg, the source and seed crystals being arranged in a parallel relationship at a distance not exceeding 0À2 of the maximum linear dimension of the source measured across the internal surface. An inert atmosphere is preferably employed. The process may be carried out in the presence of Be, B, Al, Ga, Sc, O and N which are doping agents. Seed crystals 1 may be disposed in a graphite plate 2 separated from finely dispersed SiC powder 4 by a graphite ring 3 (Fig. 1) or a polycrystalline plate 5 of SiC may be disposed over the seed crystals 1 (Fig. 2).
GB784874A 1974-02-21 1974-02-21 Method of producing epitaxial deposits of semiconductor silicon carbide Expired GB1458445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB784874A GB1458445A (en) 1974-02-21 1974-02-21 Method of producing epitaxial deposits of semiconductor silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB784874A GB1458445A (en) 1974-02-21 1974-02-21 Method of producing epitaxial deposits of semiconductor silicon carbide

Publications (1)

Publication Number Publication Date
GB1458445A true GB1458445A (en) 1976-12-15

Family

ID=9840950

Family Applications (1)

Application Number Title Priority Date Filing Date
GB784874A Expired GB1458445A (en) 1974-02-21 1974-02-21 Method of producing epitaxial deposits of semiconductor silicon carbide

Country Status (1)

Country Link
GB (1) GB1458445A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109072478A (en) * 2016-04-28 2018-12-21 学校法人关西学院 The preparation method of vapor phase epitaxy method and the substrate with epitaxial layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109072478A (en) * 2016-04-28 2018-12-21 学校法人关西学院 The preparation method of vapor phase epitaxy method and the substrate with epitaxial layer
US11359307B2 (en) * 2016-04-28 2022-06-14 Kwansei Gakuin Educational Foundation Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee