JP6941737B2 - フレーク状封止用樹脂組成物、および半導体装置 - Google Patents

フレーク状封止用樹脂組成物、および半導体装置 Download PDF

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JP6941737B2
JP6941737B2 JP2020533411A JP2020533411A JP6941737B2 JP 6941737 B2 JP6941737 B2 JP 6941737B2 JP 2020533411 A JP2020533411 A JP 2020533411A JP 2020533411 A JP2020533411 A JP 2020533411A JP 6941737 B2 JP6941737 B2 JP 6941737B2
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resin composition
sealing resin
flake
shaped sealing
mass
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JPWO2020026818A1 (ja
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須藤　信博
信博 須藤
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Kyocera Corp
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Kyocera Corp
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/011—Crosslinking or vulcanising agents, e.g. accelerators
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
JP2020533411A 2018-07-31 2019-07-17 フレーク状封止用樹脂組成物、および半導体装置 Active JP6941737B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018143674 2018-07-31
JP2018143674 2018-07-31
PCT/JP2019/028135 WO2020026818A1 (ja) 2018-07-31 2019-07-17 フレーク状封止用樹脂組成物、および半導体装置

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JPWO2020026818A1 JPWO2020026818A1 (ja) 2021-08-12
JP6941737B2 true JP6941737B2 (ja) 2021-09-29

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JP (1) JP6941737B2 (zh)
KR (1) KR102506974B1 (zh)
CN (1) CN112424284B (zh)
TW (1) TWI796507B (zh)
WO (1) WO2020026818A1 (zh)

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US5681883A (en) * 1996-03-05 1997-10-28 Advanced Ceramics Corporation Enhanced boron nitride composition and polymer based high thermal conductivity molding compound
WO2000011084A1 (fr) * 1998-08-21 2000-03-02 Hitachi Chemical Company, Ltd. Composition d'une pate, et film protecteur et semi-conducteur en etant faits
JP4535213B2 (ja) 1999-02-12 2010-09-01 日東電工株式会社 粉粒状半導体封止材料
JP4314539B2 (ja) * 1999-04-13 2009-08-19 日立化成工業株式会社 顆粒状エポキシ樹脂封止材の製造方法
JP2003155328A (ja) * 2001-11-22 2003-05-27 Sumitomo Bakelite Co Ltd タブレット及び半導体装置
JP4232443B2 (ja) * 2002-11-27 2009-03-04 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
JP4634083B2 (ja) * 2003-07-17 2011-02-16 日東電工株式会社 半導体封止用タブレットの製法
JP2006216899A (ja) * 2005-02-07 2006-08-17 Kyocera Chemical Corp コンプレッション成形用成形材料及び樹脂封止型半導体装置
JP4855329B2 (ja) 2007-05-08 2012-01-18 Ｔｏｗａ株式会社 電子部品の圧縮成形方法及び装置
JP4973325B2 (ja) 2007-06-11 2012-07-11 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物の製造方法及び半導体装置の製造方法
JP2011148959A (ja) * 2010-01-25 2011-08-04 Kyocera Chemical Corp 半導体封止用樹脂シートおよび樹脂封止型半導体装置
JP5189606B2 (ja) * 2010-01-26 2013-04-24 パナソニック株式会社 半導体封止用エポキシ樹脂組成物、及び半導体装置
JP5663250B2 (ja) * 2010-09-17 2015-02-04 京セラケミカル株式会社 半導体封止用樹脂組成物および樹脂封止型半導体装置
JP6351927B2 (ja) * 2012-12-27 2018-07-04 京セラ株式会社 封止用樹脂組成物及び半導体装置の製造方法
JP6321422B2 (ja) * 2014-03-25 2018-05-09 京セラ株式会社 封止用樹脂組成物とその製造方法、および樹脂封止型半導体装置
JP6389382B2 (ja) * 2014-06-26 2018-09-12 京セラ株式会社 半導体封止用樹脂シート及び樹脂封止型半導体装置
WO2016030985A1 (ja) * 2014-08-27 2016-03-03 積水化学工業株式会社 光半導体装置用白色硬化性組成物、光半導体装置用白色タブレット、光半導体装置用成形体及び光半導体装置
JP6880567B2 (ja) * 2016-04-26 2021-06-02 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物および半導体装置の製造方法
JP6891639B2 (ja) * 2016-07-14 2021-06-18 住友ベークライト株式会社 半導体装置、半導体装置の製造方法、半導体封止用エポキシ樹脂組成物および樹脂セット
JP2018203839A (ja) * 2017-05-31 2018-12-27 パナソニックＩｐマネジメント株式会社 封止用エポキシ樹脂組成物、封止用エポキシ樹脂組成物の製造方法及び半導体装置の製造方法

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Publication number Publication date
KR20210021049A (ko) 2021-02-24
CN112424284A (zh) 2021-02-26
TW202012584A (zh) 2020-04-01
TWI796507B (zh) 2023-03-21
KR102506974B1 (ko) 2023-03-07
CN112424284B (zh) 2023-09-26
WO2020026818A1 (ja) 2020-02-06
JPWO2020026818A1 (ja) 2021-08-12

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