KR102506974B1 - 플레이크 형상 밀봉용 수지 조성물, 및 반도체 장치 - Google Patents

플레이크 형상 밀봉용 수지 조성물, 및 반도체 장치 Download PDF

Info

Publication number
KR102506974B1
KR102506974B1 KR1020217001333A KR20217001333A KR102506974B1 KR 102506974 B1 KR102506974 B1 KR 102506974B1 KR 1020217001333 A KR1020217001333 A KR 1020217001333A KR 20217001333 A KR20217001333 A KR 20217001333A KR 102506974 B1 KR102506974 B1 KR 102506974B1
Authority
KR
South Korea
Prior art keywords
resin composition
sealing
resin
flakes
mass
Prior art date
Application number
KR1020217001333A
Other languages
English (en)
Korean (ko)
Other versions
KR20210021049A (ko
Inventor
노부히로 스도
Original Assignee
교세라 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 교세라 가부시키가이샤 filed Critical 교세라 가부시키가이샤
Publication of KR20210021049A publication Critical patent/KR20210021049A/ko
Application granted granted Critical
Publication of KR102506974B1 publication Critical patent/KR102506974B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/011—Crosslinking or vulcanising agents, e.g. accelerators
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
KR1020217001333A 2018-07-31 2019-07-17 플레이크 형상 밀봉용 수지 조성물, 및 반도체 장치 KR102506974B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-143674 2018-07-31
JP2018143674 2018-07-31
PCT/JP2019/028135 WO2020026818A1 (ja) 2018-07-31 2019-07-17 フレーク状封止用樹脂組成物、および半導体装置

Publications (2)

Publication Number Publication Date
KR20210021049A KR20210021049A (ko) 2021-02-24
KR102506974B1 true KR102506974B1 (ko) 2023-03-07

Family

ID=69231067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217001333A KR102506974B1 (ko) 2018-07-31 2019-07-17 플레이크 형상 밀봉용 수지 조성물, 및 반도체 장치

Country Status (5)

Country Link
JP (1) JP6941737B2 (zh)
KR (1) KR102506974B1 (zh)
CN (1) CN112424284B (zh)
TW (1) TWI796507B (zh)
WO (1) WO2020026818A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000290378A (ja) 1999-04-13 2000-10-17 Hitachi Chem Co Ltd 顆粒状エポキシ樹脂封止材の製造方法
JP2003155328A (ja) 2001-11-22 2003-05-27 Sumitomo Bakelite Co Ltd タブレット及び半導体装置
JP2005048173A (ja) 2003-07-17 2005-02-24 Nitto Denko Corp 半導体封止用タブレットの製法およびそれにより得られた半導体封止用タブレットならびにそれを用いた半導体装置
JP2015185759A (ja) 2014-03-25 2015-10-22 京セラケミカル株式会社 封止用樹脂組成物とその製造方法、および樹脂封止型半導体装置
WO2016030985A1 (ja) 2014-08-27 2016-03-03 積水化学工業株式会社 光半導体装置用白色硬化性組成物、光半導体装置用白色タブレット、光半導体装置用成形体及び光半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5681883A (en) * 1996-03-05 1997-10-28 Advanced Ceramics Corporation Enhanced boron nitride composition and polymer based high thermal conductivity molding compound
WO2000011084A1 (fr) * 1998-08-21 2000-03-02 Hitachi Chemical Company, Ltd. Composition d'une pate, et film protecteur et semi-conducteur en etant faits
JP4535213B2 (ja) 1999-02-12 2010-09-01 日東電工株式会社 粉粒状半導体封止材料
JP4232443B2 (ja) * 2002-11-27 2009-03-04 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物及び半導体装置
JP2006216899A (ja) * 2005-02-07 2006-08-17 Kyocera Chemical Corp コンプレッション成形用成形材料及び樹脂封止型半導体装置
JP4855329B2 (ja) 2007-05-08 2012-01-18 Ｔｏｗａ株式会社 電子部品の圧縮成形方法及び装置
JP4973325B2 (ja) 2007-06-11 2012-07-11 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物の製造方法及び半導体装置の製造方法
JP2011148959A (ja) * 2010-01-25 2011-08-04 Kyocera Chemical Corp 半導体封止用樹脂シートおよび樹脂封止型半導体装置
JP5189606B2 (ja) * 2010-01-26 2013-04-24 パナソニック株式会社 半導体封止用エポキシ樹脂組成物、及び半導体装置
JP5663250B2 (ja) * 2010-09-17 2015-02-04 京セラケミカル株式会社 半導体封止用樹脂組成物および樹脂封止型半導体装置
JP6351927B2 (ja) * 2012-12-27 2018-07-04 京セラ株式会社 封止用樹脂組成物及び半導体装置の製造方法
JP6389382B2 (ja) * 2014-06-26 2018-09-12 京セラ株式会社 半導体封止用樹脂シート及び樹脂封止型半導体装置
JP6880567B2 (ja) * 2016-04-26 2021-06-02 住友ベークライト株式会社 半導体封止用エポキシ樹脂組成物および半導体装置の製造方法
JP6891639B2 (ja) * 2016-07-14 2021-06-18 住友ベークライト株式会社 半導体装置、半導体装置の製造方法、半導体封止用エポキシ樹脂組成物および樹脂セット
JP2018203839A (ja) * 2017-05-31 2018-12-27 パナソニックＩｐマネジメント株式会社 封止用エポキシ樹脂組成物、封止用エポキシ樹脂組成物の製造方法及び半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000290378A (ja) 1999-04-13 2000-10-17 Hitachi Chem Co Ltd 顆粒状エポキシ樹脂封止材の製造方法
JP2003155328A (ja) 2001-11-22 2003-05-27 Sumitomo Bakelite Co Ltd タブレット及び半導体装置
JP2005048173A (ja) 2003-07-17 2005-02-24 Nitto Denko Corp 半導体封止用タブレットの製法およびそれにより得られた半導体封止用タブレットならびにそれを用いた半導体装置
JP2015185759A (ja) 2014-03-25 2015-10-22 京セラケミカル株式会社 封止用樹脂組成物とその製造方法、および樹脂封止型半導体装置
WO2016030985A1 (ja) 2014-08-27 2016-03-03 積水化学工業株式会社 光半導体装置用白色硬化性組成物、光半導体装置用白色タブレット、光半導体装置用成形体及び光半導体装置

Also Published As

Publication number Publication date
KR20210021049A (ko) 2021-02-24
CN112424284A (zh) 2021-02-26
TW202012584A (zh) 2020-04-01
TWI796507B (zh) 2023-03-21
CN112424284B (zh) 2023-09-26
JP6941737B2 (ja) 2021-09-29
WO2020026818A1 (ja) 2020-02-06
JPWO2020026818A1 (ja) 2021-08-12

Similar Documents

Publication Publication Date Title
JP2019151685A (ja) トランスファーコンプレッションモールド法用半導体封止用樹脂組成物及び半導体装置
JP6066865B2 (ja) 高誘電率エポキシ樹脂組成物および半導体装置
JP6832193B2 (ja) 樹脂組成物および樹脂封止型半導体装置
JP5663250B2 (ja) 半導体封止用樹脂組成物および樹脂封止型半導体装置
JP6389382B2 (ja) 半導体封止用樹脂シート及び樹脂封止型半導体装置
JP6235969B2 (ja) 圧縮成形用粉粒状樹脂組成物および樹脂封止型半導体装置
JP2019176023A (ja) 半導体封止用樹脂組成物及び半導体装置
JP6888870B2 (ja) 半導体封止用樹脂組成物及び半導体装置
TWI657513B (zh) 密封片材用樹脂組合物、密封片材及半導體裝置
TWI663203B (zh) 樹脂片及半導體裝置、以及半導體裝置之製造方法
JP2014118461A (ja) 粉粒状半導体封止用樹脂組成物および半導体装置
KR102506974B1 (ko) 플레이크 형상 밀봉용 수지 조성물, 및 반도체 장치
JP7002866B2 (ja) 粉粒状半導体封止用樹脂組成物及び半導体装置
KR101266542B1 (ko) 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 반도체 소자 패키지
JP2020139070A (ja) 封止用樹脂組成物及びその製造方法、並びに半導体装置
JP2006257309A (ja) 半導体封止用エポキシ樹脂組成物及び半導体装置
JP6276365B2 (ja) 粉粒状半導体封止用樹脂組成物の融け性評価方法および樹脂封止型半導体装置の製造方法
JP6351927B2 (ja) 封止用樹脂組成物及び半導体装置の製造方法
KR101758448B1 (ko) 반도체 소자 밀봉용 에폭시수지 조성물 및 이를 사용하여 밀봉된 반도체 소자
TWI692489B (zh) 樹脂片材、半導體裝置及半導體裝置之製造方法
JP3846854B2 (ja) エポキシ樹脂組成物及び半導体装置
KR100870078B1 (ko) 반도체 소자 밀봉용 에폭시 수지 조성물　및 이를 이용한반도체 소자
JPH11163224A (ja) エポキシ樹脂組成物及び半導体装置
JP2005015583A (ja) 熱硬化性樹脂組成物エポキシ樹脂組成物及び半導体装置

Legal Events

Date Code Title Description
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant