JP6925749B2 - 膜形成方法、及び膜形成装置 - Google Patents

膜形成方法、及び膜形成装置 Download PDF

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Publication number
JP6925749B2
JP6925749B2 JP2018013310A JP2018013310A JP6925749B2 JP 6925749 B2 JP6925749 B2 JP 6925749B2 JP 2018013310 A JP2018013310 A JP 2018013310A JP 2018013310 A JP2018013310 A JP 2018013310A JP 6925749 B2 JP6925749 B2 JP 6925749B2
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Japan
Prior art keywords
ink
curing
film
substrate
coating portion
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Active
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JP2018013310A
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English (en)
Japanese (ja)
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JP2019130447A (ja
Inventor
誠 鎰廣
誠 鎰廣
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Sumitomo Heavy Industries Ltd
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Sumitomo Heavy Industries Ltd
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Priority to JP2018013310A priority Critical patent/JP6925749B2/ja
Priority to KR1020180143099A priority patent/KR102563456B1/ko
Priority to TW107141994A priority patent/TWI740074B/zh
Priority to CN201811423993.8A priority patent/CN110095935B/zh
Publication of JP2019130447A publication Critical patent/JP2019130447A/ja
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Publication of JP6925749B2 publication Critical patent/JP6925749B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
JP2018013310A 2018-01-30 2018-01-30 膜形成方法、及び膜形成装置 Active JP6925749B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018013310A JP6925749B2 (ja) 2018-01-30 2018-01-30 膜形成方法、及び膜形成装置
KR1020180143099A KR102563456B1 (ko) 2018-01-30 2018-11-20 막형성방법 및 막형성장치
TW107141994A TWI740074B (zh) 2018-01-30 2018-11-26 膜形成方法、膜形成裝置及形成有膜之複合基板
CN201811423993.8A CN110095935B (zh) 2018-01-30 2018-11-27 膜形成方法、膜形成装置及形成有膜的复合基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018013310A JP6925749B2 (ja) 2018-01-30 2018-01-30 膜形成方法、及び膜形成装置

Publications (2)

Publication Number Publication Date
JP2019130447A JP2019130447A (ja) 2019-08-08
JP6925749B2 true JP6925749B2 (ja) 2021-08-25

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JP2018013310A Active JP6925749B2 (ja) 2018-01-30 2018-01-30 膜形成方法、及び膜形成装置

Country Status (4)

Country Link
JP (1) JP6925749B2 (ko)
KR (1) KR102563456B1 (ko)
CN (1) CN110095935B (ko)
TW (1) TWI740074B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7464378B2 (ja) * 2019-11-22 2024-04-09 住友重機械工業株式会社 インク塗布制御装置及びインク塗布方法
JP7446854B2 (ja) * 2020-03-02 2024-03-11 住友重機械工業株式会社 インク塗布装置、インク塗布装置の制御装置、及びインク塗布方法
JP2021181054A (ja) * 2020-05-19 2021-11-25 住友重機械工業株式会社 インク塗布装置、その制御装置、及びインク塗布方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5719040A (en) * 1980-07-09 1982-02-01 Mitsubishi Heavy Ind Ltd Production of catalyst employing metal base material
JP2004363560A (ja) * 2003-05-09 2004-12-24 Seiko Epson Corp 基板、デバイス、デバイス製造方法、アクティブマトリクス基板の製造方法及び電気光学装置並びに電子機器
JP4179288B2 (ja) * 2005-02-01 2008-11-12 セイコーエプソン株式会社 膜パターン形成方法
WO2008102837A1 (ja) * 2007-02-21 2008-08-28 Musashi Engineering, Inc. インクジェット塗布装置におけるクリーニング方法、ノズル検査方法、塗布制御方法、および成膜方法
JP2010056266A (ja) * 2008-08-28 2010-03-11 Casio Comput Co Ltd 半導体装置の製造方法
JP5600662B2 (ja) * 2010-12-15 2014-10-01 日本特殊陶業株式会社 伝導体パターンの形成方法
WO2013011775A1 (ja) * 2011-07-15 2013-01-24 住友重機械工業株式会社 薄膜形成方法及び薄膜形成装置
JP5874228B2 (ja) * 2011-07-26 2016-03-02 セイコーエプソン株式会社 印刷装置及び印刷方法
US9857502B2 (en) * 2011-09-09 2018-01-02 Lg Innotek Co., Ltd. Method of fabricating film of substrate and film, backlight unit and liquid crystal display using the same
JP2014104385A (ja) * 2012-11-26 2014-06-09 Sumitomo Heavy Ind Ltd 基板製造方法及び基板製造装置
JP6156633B2 (ja) * 2013-06-28 2017-07-05 住友重機械工業株式会社 薄膜形成方法及び薄膜形成装置
JP2015026655A (ja) * 2013-07-25 2015-02-05 住友重機械工業株式会社 薄膜形成方法及び薄膜形成装置
JP5719040B1 (ja) 2013-08-20 2015-05-13 株式会社小松製作所 建設機械用コントローラ
JP6274832B2 (ja) * 2013-11-26 2018-02-07 住友重機械工業株式会社 薄膜形成方法及び薄膜形成装置
JP6289880B2 (ja) * 2013-11-26 2018-03-07 住友重機械工業株式会社 薄膜形成方法及び薄膜形成装置
JP6085578B2 (ja) * 2014-03-11 2017-02-22 住友重機械工業株式会社 膜形成方法及び膜形成装置
JP6479555B2 (ja) * 2015-04-27 2019-03-06 住友重機械工業株式会社 膜形成装置

Also Published As

Publication number Publication date
CN110095935B (zh) 2022-05-10
TWI740074B (zh) 2021-09-21
CN110095935A (zh) 2019-08-06
KR102563456B1 (ko) 2023-08-03
KR20190092240A (ko) 2019-08-07
JP2019130447A (ja) 2019-08-08
TW201933487A (zh) 2019-08-16

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