JP6905395B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6905395B2 JP6905395B2 JP2017118990A JP2017118990A JP6905395B2 JP 6905395 B2 JP6905395 B2 JP 6905395B2 JP 2017118990 A JP2017118990 A JP 2017118990A JP 2017118990 A JP2017118990 A JP 2017118990A JP 6905395 B2 JP6905395 B2 JP 6905395B2
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- semiconductor layer
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- 239000004065 semiconductor Substances 0.000 title claims description 288
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 28
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000005533 two-dimensional electron gas Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
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- 239000010936 titanium Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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Description
図1に半導体装置100の模式断面図を示す。
半導体装置100は、炭化ケイ素(SiC)上に形成されたGaN系半導体で構成される電界効果トランジスタ(Field Effect Transistor:FET)である。
図2に半導体装置101を示す。
図3に半導体装置102を示す。
図4(a)に半導体装置103、図4(b)に図4(a)の点線で囲んだ部分の拡大図を示す。
2 第2の半導体層
3 第3の半導体層
4 ドレイン電極
5 ソース電極
6 導通電極
7 ゲート電極
8 第1の絶縁層
9 第2の領域
10 第3の領域
10a 第5の領域
10b 第6の領域
11 第4の領域
12 バッファ層
13 第2の絶縁層
14 第1の領域
15 第7の領域
100〜105 半導体装置
Claims (21)
- 炭化ケイ素である第1の半導体層と、
窒化物半導体である第2の半導体層と、
前記第2の半導体層に接し、前記第1の半導体層と前記第2の半導体層の間にあり、かつ窒化物半導体である第3の半導体層と、
前記第1の半導体層の前記第3の半導体層がある側とは反対側にあるドレイン電極と、
前記第2の半導体層の前記第3の半導体層がある側とは反対側にあって、第1の凸部を有し、前記第1の凸部は前記第2の半導体層および前記第3の半導体層のそれぞれを貫通し、前記第1の凸部の先端は前記第1の半導体層の内部に位置するソース電極と、
前記第2の半導体層の前記第3の半導体層がある側とは反対側にあって、第2の凸部を有し、前記第2の凸部は前記第2の半導体層および前記第3の半導体層のそれぞれを貫通し、前記第2の凸部の先端は前記第1の半導体層の内部に位置する導通電極と、
前記第2の半導体層の前記第3の半導体層がある側とは反対側にあって、前記ソース電極と前記導通電極の間にあるゲート電極と、
前記ゲート電極と前記第2の半導体層の間にある第1の絶縁層と、
前記第1の半導体層に含まれ、第1の導電型である第1の領域と、
前記第1の半導体層に含まれ、前記第1の領域と前記ドレイン電極の間にあり、かつ第1の導電型である第2の領域と、
前記第1の半導体層に含まれ、前記導通電極の前記第2の凸部と前記第1の領域の間にあり、かつ第1の導電型である第3の領域と、
前記第1の半導体層に含まれ、前記第3の半導体層と前記第1の領域の間にあって、前記ソース電極と前記導通電極の間にあり、かつ第2の導電型である第4の領域と、
を備える半導体装置。 - 前記ゲート電極はさらに第3の凸部を有し、前記ゲート電極の前記第3の凸部は前記第2の半導体層の内部に位置し、前記第3の半導体層に達している請求項1に記載の半導体装置。
- 前記導通電極の前記第2の凸部と前記第3の半導体層の間にある第2の絶縁層をさらに備える請求項1または請求項2に記載の半導体装置。
- 前記第3の領域は第5の領域と第6の領域をさらに含み、
前記ソース電極から前記導通電極に向かう方向に前記第5の領域と前記第6の領域が交互に位置している請求項1ないし請求項3のいずれか1項に記載の半導体装置。 - 前記第5の領域は高濃度のn型である請求項4に記載の半導体装置。
- 前記第6の領域はp型である請求項4または請求項5に記載の半導体装置。
- 前記ソース電極を間に挟んで前記導通電極がある側とは反対側の第1の半導体層に前記第4の領域は複数あり、複数の前記第4の領域は互いに離間している請求項1ないし請求項6のいずれか1項に記載の半導体装置。
- 前記ソース電極を間に挟んで前記導通電極がある側とは反対側の第1の半導体層にあって、前記第4の領域と隣接する第7の領域をさらに備える請求項1ないし請求項7のいずれか1項に記載の半導体装置。
- 前記第7の領域はp型である請求項8に記載の半導体装置。
- 前記第2の半導体層はAlxGa(1−x)N(0<x≦1)である請求項1ないし請求項9のいずれか1項に記載の半導体装置。
- 前記第3の半導体層はGaNである請求項1ないし請求項10のいずれか1項に記載の半導体装置。
- 第2の半導体層は、第3の半導体層3よりもバンドギャップの大きい請求項1ないし請求項11のいずれか1項に記載の半導体装置。
- 前記第1の領域は低濃度のn型である請求項1ないし請求項12のいずれか1項に記載の半導体装置。
- 前記第2の領域および前記第3の領域は高濃度のn型である請求項1ないし請求項13のいずれか1項に記載の半導体装置。
- 前記第4の領域はp型である請求項1ないし請求項14のいずれか1項に記載の半導体装置。
- 前記第1の領域の導電型不純物濃度は1015cm−3以上1017cm−3である請求項13に記載の半導体装置。
- 前記第2の領域の導電型不純物濃度は1018cm−3以上1020cm−3以下である請求項14に記載の半導体装置。
- 前記第3の領域の導電型不純物濃度は1018cm−3以上1020cm−3以下である請求項14に記載の半導体装置。
- 前記第4の領域の導電型不純物濃度は1015cm−3以上1020cm−3以下である請求項15に記載の半導体装置。
- 前記導通電極はNi、Ti、Al、およびAuを含む請求項1ないし請求項19のいずれか1項に記載の半導体装置。
- 前記ゲート電極はTiNである請求項1ないし請求項20のいずれか1項に記載の半導体装置。
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