JP6892933B2 - 炭化ケイ素パワーモジュール - Google Patents
炭化ケイ素パワーモジュール Download PDFInfo
- Publication number
- JP6892933B2 JP6892933B2 JP2019563136A JP2019563136A JP6892933B2 JP 6892933 B2 JP6892933 B2 JP 6892933B2 JP 2019563136 A JP2019563136 A JP 2019563136A JP 2019563136 A JP2019563136 A JP 2019563136A JP 6892933 B2 JP6892933 B2 JP 6892933B2
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- Prior art keywords
- power module
- terminal
- module according
- power
- semiconductor dies
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 title description 18
- 239000004065 semiconductor Substances 0.000 claims description 119
- 238000002161 passivation Methods 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 48
- 238000001465 metallisation Methods 0.000 claims description 37
- 229910052709 silver Inorganic materials 0.000 claims description 27
- 239000004332 silver Substances 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 230000000903 blocking effect Effects 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 131
- 238000012360 testing method Methods 0.000 description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 20
- 239000000356 contaminant Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
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- 238000010586 diagram Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- -1 area Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004255 ion exchange chromatography Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 235000021317 phosphate Nutrition 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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- H02M3/00—Conversion of dc power input into dc power output
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Description
[0013]本明細書に組み込まれそして一部を形成する添付の図面は、本開示のいくつかの態様を図説し、そして説明とともに本開示の原理を説明するように働く。
Claims (25)
- 第1の端子および第2の端子と
前記第1の端子と前記第2の端子との間に結合された複数の炭化ケイ素(SiC)半導体ダイであって、前記複数の半導体ダイはパワーモジュールが、
前記第1の端子と前記第2の端子との間の抵抗が100mΩ未満であるように動作の順方向伝導モード中に前記第1の端子から前記第2の端子への電流の流れのための低抵抗経路を形成し、
前記パワーモジュールの定格電圧の少なくとも80%の電圧が前記第1の端子および前記第2の端子を横切って与えられるときに、前記第1の端子と前記第2の端子との間のリーク電流が20mA未満であるように、順方向ブロッキングモードの動作中に前記第1の端子から前記第2の端子への電流の流れのための高抵抗経路を形成し、前記パワーモジュールの前記定格電圧が、少なくとも600Vであり、前記パワーモジュールが、故障せずに少なくとも85℃の温度で少なくとも85%の相対湿度で少なくとも1000時間の期間にわたり前記第1の端子と前記第2の端子とを横切る前記定格電圧の少なくとも80%の電圧を維持することができる、
ように構成される、複数の炭化ケイ素(SiC)半導体ダイと
を備える、パワーモジュール。 - 請求項1に記載のパワーモジュールであって、前記複数の半導体ダイのそれぞれ1つが、
基板と、
前記基板の上方のドリフト層と、
前記ドリフト層の上方のパッシベーション層積層体であり、前記パッシベーション層積層体が、少なくとも4層のパッシベーション層の組成が少なくとも第1の材料と第2の材料との間で交互になるように少なくとも4層のパッシベーション層を含む、パッシベーション層積層体と
を備える、パワーモジュール。 - 請求項2に記載のパワーモジュールであって、前記第1の材料および前記第2の材料が窒化ケイ素(SiN)、二酸化ケイ素(SiO2)、および酸窒化ケイ素(SiON)のうちの異なるものである、パワーモジュール。
- 請求項2に記載のパワーモジュールであって、前記パッシベーション層積層体が少なくとも1.6μmの厚さを有する、パワーモジュール。
- 請求項2に記載のパワーモジュールであって、前記複数の半導体ダイのそれぞれ1つは、裏面メタライゼーション層が実質的に銀を含まないように前記ドリフト層とは反対の前記基板上に裏面メタライゼーション層をさらに備える、パワーモジュール。
- 請求項5に記載のパワーモジュールであって、前記複数の半導体ダイがダイ貼り付け材料を介してマウントされるパワー電子基板であり、前記パワー電子基板および前記ダイ貼り付け材料が実質的に銀を含まない、パワー電子基板をさらに備える、パワーモジュール。
- 請求項2に記載のパワーモジュールであって、前記複数の半導体ダイがダイ貼り付け材料を介してマウントされるパワー電子基板であり、前記パワー電子基板および前記ダイ貼り付け材料が実質的に銀を含まない、パワー電子基板をさらに備える、パワーモジュール。
- 請求項1に記載のパワーモジュールであって、前記複数の半導体ダイのそれぞれ1つが、
基板と、
前記基板の上方のドリフト層と、
前記ドリフト層とは反対の前記基板上の裏面メタライゼーション層であり、前記裏面メタライゼーション層が実質的に銀を含まない、裏面メタライゼーション層と
を備える、パワーモジュール。 - 請求項8に記載のパワーモジュールであって、
金属−酸化物−半導体電界効果トランジスタ(MOSFET)が、前記複数の半導体ダイのうちの少なくとも1つの前記ドリフト層内に形成され、
前記裏面メタライゼーション層が前記MOSFETのドレインコンタクトを形成する、パワーモジュール。 - 請求項9に記載のパワーモジュールであって、
ショットキーダイオードが、前記複数の半導体ダイのうちの少なくとも1つの前記ドリフト層内に形成され、
前記裏面メタライゼーション層が前記ショットキーダイオードのカソードコンタクトを形成する、パワーモジュール。 - 請求項8に記載のパワーモジュールであって、
ショットキーダイオードが、前記複数の半導体ダイのうちの少なくとも1つの前記ドリフト層内に形成され、
前記裏面メタライゼーション層が前記ショットキーダイオードのカソードコンタクトを形成する、パワーモジュール。 - 請求項8に記載のパワーモジュールであって、前記裏面メタライゼーション層が、スズ、ニッケル、および金を含む、パワーモジュール。
- 請求項8に記載のパワーモジュールであって、前記複数の半導体ダイのそれぞれ1つが、前記基板とは反対の前記ドリフト層上に表面メタライゼーション層をさらに備え、前記表面メタライゼーション層が、チタンの第1の層および前記第1の層の上方にアルミニウム、ニッケル、および金を含む第2の層を備える、パワーモジュール。
- 請求項1に記載のパワーモジュールであって、パワー電子基板をさらに備え、前記複数の半導体ダイが、前記パワー電子基板の上にマウントされる、パワーモジュール。
- 請求項14に記載のパワーモジュールであって、前記パワー電子基板が、実質的に銀を含まない、パワーモジュール。
- 請求項15に記載のパワーモジュールであって、前記パワー電子基板が、直接接合銅(DBC)パワー電子基板である、パワーモジュール。
- 請求項15に記載のパワーモジュールであって、前記複数の半導体ダイが、実質的に銀を含まないダイ貼り付け材料を使用して前記パワー電子基板の上にマウントされる、パワーモジュール。
- 請求項17に記載のパワーモジュールであって、前記ダイ貼り付け材料が、スズおよびアンチモンを含む、パワーモジュール。
- 請求項14に記載のパワーモジュールであって、前記複数の半導体ダイが、実質的に銀を含まないダイ貼り付け材料を使用して前記パワー電子基板の上にマウントされる、パワーモジュール。
- 請求項19に記載のパワーモジュールであって、前記ダイ貼り付け材料が、スズおよびアンチモンを含む、パワーモジュール。
- 請求項19に記載のパワーモジュールであって、前記パワー電子基板がマウントされるベースプレートをさらに備え、前記パワー電子基板が、実質的に銀を含まない基板貼り付け材料を使用して前記ベースプレートの上にマウントされる、パワーモジュール。
- 請求項1に記載のパワーモジュールであって、
動作の前記順方向伝導モード中の前記第1の端子と前記第2の端子との間の前記抵抗が、少なくとも0.1mΩであり、
動作の前記順方向ブロッキングモード中の前記第1の端子と前記第2の端子との間の前記リーク電流が、0.1mAよりも大きい、パワーモジュール。 - 請求項1に記載のパワーモジュールであって、前記複数の半導体ダイのそれぞれ1つが、
基板と、
前記基板の上方のドリフト層と、
前記ドリフト層の上方のパッシベーション層積層体であり、前記パッシベーション層積層体が、少なくとも4層のパッシベーション層を含む、パッシベーション層積層体と
を備える、パワーモジュール。 - 請求項23に記載のパワーモジュールであって、前記パッシベーション層積層体が少なくとも1.6μmの厚さである、パワーモジュール。
- 請求項1に記載のパワーモジュールであって、前記複数の半導体ダイのそれぞれ1つが、
基板と、
前記基板の上方のドリフト層と、
前記ドリフト層の上方のパッシベーション層積層体であり、前記パッシベーション層積層体が、窒化ケイ素(SiN)、二酸化ケイ素(SiO2)、および酸窒化ケイ素(SiON)の少なくとも4層の交互の層を含む、パッシベーション層積層体と
を備える、パワーモジュール。
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