JP6877431B2 - 酸素含有量が異なるグラフェン量子ドットの製造方法、グラフェン量子ドット、及び蛍光材料 - Google Patents
酸素含有量が異なるグラフェン量子ドットの製造方法、グラフェン量子ドット、及び蛍光材料 Download PDFInfo
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/65—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing carbon
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- Y10S977/00—Nanotechnology
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- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
酸化グラフェンを過酸化物溶液中に分散させて、酸化グラフェン分散液を得るステップ1と、
前記酸化グラフェン分散液とアルカリ液を混合し精製して、グラフェン量子ドット乾燥粉末を得るステップ2と、
前記グラフェン量子ドット乾燥粉末を担体に担持させた後に、グラジエント溶出を行って、酸素含有量が異なるグラフェン量子ドットを得るステップ3と、
を含む、酸素含有量が異なるグラフェン量子ドットの製造方法を提供するものである。
酸化グラフェンを過酸化物溶液中に分散させて、酸化グラフェン分散液を得るステップ1と、
前記酸化グラフェン分散液とアルカリ液を混合し精製して、グラフェン量子ドット乾燥粉末を得るステップ2と、
前記グラフェン量子ドット乾燥粉末を担持させた後に、グラジエント溶出を行って、酸素含有量が異なるグラフェン量子ドットを得るステップ3と、
を含む、酸素含有量が異なるグラフェン量子ドットの製造方法を提供するものである。
酸化グラフェン(C:O=5)を濃度が5wt%の過酸化水素溶液に溶解し、180Wの出力で30分間超音波分散して、酸化グラフェン分散液を生成する。当該分散液における、酸化グラフェンの濃度は0.3wt%である。
GO(C:O=1)を濃度が30wt%の過硫酸アンモニウムの溶液に溶解し、120Wの出力で1時間超音波分散して、グラフェン分散液を生成する。当該分散液における、GOの濃度は4.5wt%である。
GO(C:O=2)を濃度が20wt%の過硫酸カリウムの溶液に溶解し、100Wの出力で2時間超音波分散して、酸化グラフェン分散液を生成する。当該分散液における、GOの濃度は2wt%である。
GO(C:O=4)を濃度が3wt%のジベンゾイルパーオキシドの溶液に溶解し、100Wの出力で2時間超音波分散して、酸化グラフェン分散液を生成する。当該分散液における、GOの濃度は4wt%である。
Claims (7)
- 酸素含有量が異なるグラフェン量子ドットの製造方法であって、
酸化グラフェンを過酸化物溶液中に分散させて、酸化グラフェン分散液を得るステップ1と、
前記酸化グラフェン分散液とアルカリ液とを混合し精製して、グラフェン量子ドット乾燥粉末を得るステップ2と、
前記グラフェン量子ドット乾燥粉末を担体に担持させた後に、グラジエント溶出を行って、酸素含有量が異なるグラフェン量子ドットを得るステップ3と、
を含む、酸素含有量が異なるグラフェン量子ドットの製造方法。 - 前記酸化グラフェンのC/O比が0.5〜5であることを特徴とする、請求項1に記載の酸素含有量が異なるグラフェン量子ドットの製造方法。
- 前記酸化グラフェン分散液における、酸化グラフェンの質量濃度が0.1%〜5%であり、かつ/又は、前記過酸化物の溶液の質量濃度が3%〜30%であることを特徴とする、請求項1に記載の酸素含有量が異なるグラフェン量子ドットの製造方法。
- 前記過酸化物が、過酸化水素、過硫酸アンモニウム、過硫酸ナトリウム、ペルオキシ一硫酸カリウム、ペルオキソホウ酸ナトリウム、ジベンゾイルパーオキシド、ジラウロイルパーオキシドのうちの少なくとも1つであることを特徴とする、請求項1に記載の酸素含有量が異なるグラフェン量子ドットの製造方法。
- 前記ステップ2に、前記精製をした後に、
精製後の生成物と還元剤とを溶剤中で反応させ、精製して、グラフェン量子ドット乾燥粉末を得るステップがさらに含まれることを特徴とする、請求項1に記載の酸素含有量が異なるグラフェン量子ドットの製造方法。 - ステップ3における前記グラジエント溶出が、具体的には、真空液体クロマトグラフィ又はカラムクロマトグラフィによって行なわれるグラジエント溶出であることを特徴とする、請求項1から5のいずれか一項に記載の酸素含有量が異なるグラフェン量子ドットの製造方法。
- 前記グラジエント溶出に使用する溶出剤は、第一極性溶剤と第二極性溶剤とを含み、前記第一極性溶剤の極性が前記第二極性溶剤の極性よりも大きく、前記第一極性溶剤には、水、メタノール、エタノール、グリコール、塩酸‐メタノール溶液、テトラヒドロフラン、蟻酸、酢酸、アセトニトリル、N,N‐ジメチルホルムアミド、エチルエーテル、アセトン、ニトロメタンのうちの一又は複数が含まれ、前記第二極性溶剤は、シクロヘキサン、n‐ヘキサン、石油エーテル、酢酸エチル、ジメチルカーボネート、ジクロロメタン、クロロホルム、四塩化炭のうちの一又は複数を含むことを特徴とする、請求項6に記載の酸素含有量が異なるグラフェン量子ドットの製造方法。
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