JP6876893B2 - 酸化イットリウム膜の製造方法 - Google Patents

酸化イットリウム膜の製造方法 Download PDF

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Publication number
JP6876893B2
JP6876893B2 JP2015106565A JP2015106565A JP6876893B2 JP 6876893 B2 JP6876893 B2 JP 6876893B2 JP 2015106565 A JP2015106565 A JP 2015106565A JP 2015106565 A JP2015106565 A JP 2015106565A JP 6876893 B2 JP6876893 B2 JP 6876893B2
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yttrium oxide
film
oxide film
raw material
material solution
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JP2016216332A5 (enExample
JP2016216332A (ja
Inventor
貴博 佐々木
貴博 佐々木
真也 織田
真也 織田
俊実 人羅
俊実 人羅
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Flosfia Inc
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Flosfia Inc
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  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015106565A 2015-05-26 2015-05-26 酸化イットリウム膜の製造方法 Active JP6876893B2 (ja)

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JP2015106565A JP6876893B2 (ja) 2015-05-26 2015-05-26 酸化イットリウム膜の製造方法

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JP2016216332A JP2016216332A (ja) 2016-12-22
JP2016216332A5 JP2016216332A5 (enExample) 2018-07-12
JP6876893B2 true JP6876893B2 (ja) 2021-05-26

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7165314B2 (ja) * 2017-12-01 2022-11-04 株式会社Flosfia 着色膜形成用組成物
JP7165313B2 (ja) * 2017-12-01 2022-11-04 株式会社Flosfia 着色方法
JP6980182B2 (ja) * 2017-12-01 2021-12-15 株式会社Flosfia 超音波ミスト
JP2019116676A (ja) * 2017-12-27 2019-07-18 テクノクオーツ株式会社 成膜装置の構成部材の耐食構造およびその構成部材の製造方法
JP7280462B2 (ja) * 2018-04-27 2023-05-24 株式会社Flosfia 光導波路の製造方法
CN117837273A (zh) * 2021-08-31 2024-04-05 京瓷株式会社 耐等离子层叠体、其制造方法和等离子处理装置
CN116024550B (zh) * 2023-03-06 2025-02-07 青禾晶元(天津)半导体材料有限公司 一种利用雾化学气相沉积生长氧化物薄膜的装置系统及方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4205912B2 (ja) * 2002-08-13 2009-01-07 時田シーブイディーシステムズ株式会社 透明な酸化イットリウム膜とその製造方法
JP2007197296A (ja) * 2005-07-27 2007-08-09 Showa Denko Kk 金属酸化物微粒子の分散液およびその製造方法
US20130260047A1 (en) * 2012-03-27 2013-10-03 Rajan Bamola Coating and methods thereof
JP6137668B2 (ja) * 2012-08-26 2017-05-31 国立大学法人 熊本大学 酸化亜鉛結晶層の製造方法及びミスト化学気相成長装置
JP5397795B1 (ja) * 2013-06-21 2014-01-22 Ｒｏｃａ株式会社 半導体装置及びその製造方法、結晶及びその製造方法

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