TWI821481B - 氧化鎵膜之製造方法 - Google Patents
氧化鎵膜之製造方法 Download PDFInfo
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- TWI821481B TWI821481B TW108146090A TW108146090A TWI821481B TW I821481 B TWI821481 B TW I821481B TW 108146090 A TW108146090 A TW 108146090A TW 108146090 A TW108146090 A TW 108146090A TW I821481 B TWI821481 B TW I821481B
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- Prior art keywords
- mist
- heating
- carrier gas
- gallium oxide
- film
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- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 49
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000003595 mist Substances 0.000 claims abstract description 107
- 238000010438 heat treatment Methods 0.000 claims abstract description 73
- 239000012159 carrier gas Substances 0.000 claims abstract description 71
- 239000002994 raw material Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- -1 gallium ions Chemical class 0.000 claims abstract description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 33
- 239000010408 film Substances 0.000 description 115
- 239000000243 solution Substances 0.000 description 29
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 238000000889 atomisation Methods 0.000 description 10
- 238000007865 diluting Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000010790 dilution Methods 0.000 description 6
- 239000012895 dilution Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- UNRQTHVKJQUDDF-UHFFFAOYSA-N acetylpyruvic acid Chemical compound CC(=O)CC(=O)C(O)=O UNRQTHVKJQUDDF-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229940071870 hydroiodic acid Drugs 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 150000003842 bromide salts Chemical class 0.000 description 1
- DKSMCEUSSQTGBK-UHFFFAOYSA-N bromous acid Chemical compound OBr=O DKSMCEUSSQTGBK-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229940077239 chlorous acid Drugs 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000004820 halides Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 description 1
- SRPSOCQMBCNWFR-UHFFFAOYSA-N iodous acid Chemical compound OI=O SRPSOCQMBCNWFR-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本發明提供氧化鎵膜之製造方法,其係將原料溶液霧化或液滴化而產生之霧,使用載體氣體進行搬送,加熱前述霧,而於基體上使前述霧熱反應並進行成膜之氧化鎵膜之製造方法,且使用至少包含氯化物離子與鎵離子之原料溶液作為前述原料溶液,加熱前述霧之時間為0.002秒以上6秒以下。藉此,可以低成本提供成膜速度優異之α-氧化鎵膜之製造方法。
Description
本發明有關使用霧狀原料於基體上製造氧化鎵膜之方法。
以往已開發可實現脈衝雷射沉積法(Pulsed laser deposition:PLD)、分子束磊晶法(Moleculae beam epitaxy:MBE)、濺鍍法等之非平衡狀態之高真空成膜裝置,而可製作以迄今之熔液法等無法製作之氧化物半導體。又,已開發使用霧化之霧狀原料,於基板上結晶成長之霧狀化學氣相成長法(Mist Chemical Vapor Deposition:霧CVD,以下亦稱為「霧CVD法」),而可製作具有剛玉構造之氧化鎵(α-氧化鎵,有時記載為α-Ga2
O3
)。α-氧化鎵可作為帶隙較大之半導體,被期待應用於可實現高耐壓、低損失及高耐熱之次世代之開關元件。
關於霧CVD法,於專利文獻1中,記載管狀爐型之霧CVD裝置。專利文獻2中,記載細通道型之霧CVD裝置。專利文獻3中記載線性源型之霧CVD裝置。專利文獻4中記載管狀爐之霧CVD裝置,與專利文獻1之霧CVD裝置之差異點在於於霧狀產生器內導入載體氣體。專利文獻5中記載於霧狀產生器上方設置基板,進而於加熱板上具備安裝有基座之旋轉台之霧CVD裝置。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開平1-257337號公報
[專利文獻2]日本特開2005-307238號公報
[專利文獻3]日本特開2012-46772號公報
[專利文獻4]日本專利第5397794號公報
[專利文獻5]日本特開2014-63973號公報
[發明欲解決之課題]
霧CVD法與其他CVD法不同,並無必要處於高溫,亦可製作α-氧化鎵之如剛玉構造之準安定相之結晶構造。α-氧化鎵之製作中,使用乙醯基丙酮酸鎵或溴化鎵、碘化鎵等作為鎵源。此等材料比較昂貴,且供給穩定性亦不穩。基於此等觀點,將氯化鎵或金屬鎵以鹽酸溶解者由於為便宜材料,且可期待材料之穩定供給,故為霧CVD法所用材料之選項之一。
然而,本發明人等使用包含氯化鎵或鹽酸之材料進行檢討,結果發現與使用如上述材料之情況相比,有成膜速度顯著降低之問題。
本發明係為解決上述問題而完成者,目的在於提供於霧CVD法中以低成本且成膜速度優異之α-氧化鎵膜之製造方法。
[用以解決課題之手段]
本發明係為達上述目的而完成者,而提供氧化鎵膜之製造方法,其係將原料溶液霧化或液滴化而產生之霧,使用載體氣體進行搬送,加熱前述霧,而於基體上使前述霧熱反應並進行成膜之氧化鎵膜之製造方法,且使用至少包含氯化物離子與鎵離子之原料溶液作為前述原料溶液,加熱前述霧之時間為0.002秒以上6秒以下。
依據此等之氧化鎵膜之製造方法,可改善成膜速度降低之問題,可以低成本製造氧化鎵膜。
此時,可為加熱前述霧之時間為0.02秒以上0.5秒以下之氧化鎵膜之製造方法。
藉此,可穩定地設為更高成膜速度。
此時,可為加熱前述霧之時間為0.07秒以上0.3秒以下之氧化鎵膜之製造方法。
藉此,可穩定地設為更高成膜速度。
此時,可為使前述霧熱反應之前述基體之加熱溫度為100℃以上600℃以下之氧化鎵膜之製造方法。
藉此,可更確實地以低成本成膜氧化鎵膜。
此時,可成為使用板狀且進行成膜的面之面積為100mm2
以上者作為前述基體的氧化鎵膜之製造方法。
藉此,可以低成本獲得大面積之氧化鎵膜。
[發明效果]
如以上,依據本發明之氧化鎵膜之製造方法,可改善成膜速度之降低,可以低成本製造氧化鎵半導體膜。
以下詳細說明本發明,但本發明並非限定於該等者。
如上述,霧CVD法中,要求以低成本且成膜速度優異之α-氧化鎵膜之製造方法。
本發明人等針對上述課題重複積極檢討之結果,發現藉由將原料溶液霧化或液滴化而產生之霧,使用載體氣體進行搬送,加熱前述霧,而於基體上使前述霧熱反應並進行成膜之氧化鎵膜之製造方法,且使用至少包含氯化物離子與鎵離子之原料溶液作為前述原料溶液,加熱前述霧之時間為0.002秒以上6秒以下氧化鎵膜之製造方法,可改善成膜速度降低之問題,可以低成本製造氧化鎵膜,而完成本發明。
此處,本發明中所謂霧係指分散於氣體中之液體微粒子之總稱,包含稱為霧、液滴等者。
以下,參考圖式予以說明。
圖1係顯示本發明之氧化鎵膜之製造方法中可所用之成膜裝置101之一例。成膜裝置101具有將原料溶液霧化而發生霧之霧化部120、供給搬送霧之載體氣體之載體氣體供給部130、將霧熱處理而於基體上進行成膜之成膜部140、連接霧化部120與成膜部140並藉由載體氣體搬送霧之搬送部109。又,成膜裝置101藉由具備控制成膜裝置101之全體或一部分之控制部(未圖示),亦可控制其動作。
(原料溶液)
本發明中,具有之特徵之一,係使用至少包含氯化物離子與鎵離子之原料溶液作為氧化鎵膜之製造所用之原料。此等材料便宜且供給穩定性亦優異。
原料溶液104a若為至少包含氯化物離子與鎵離子則未特別限定。亦即,除了鎵以外,亦可包含例如選自鐵、銦、鋁、釩、鈦、鉻、銠、銥、鎳及鈷之1種或2種以上之金屬離子。
前述原料溶液104a若為可使上述金屬霧化者則未特別限定,但作為前述原料溶液104a,可較佳地使用前述金屬以錯合物或鹽之形態,溶解或分散於水中者。作為錯合物形態舉例為例如乙醯基丙酮酸鹽錯合物、羰基錯合物、氨錯合物、氫化物錯合物等。作為鹽之形態舉例為例如氯化金屬鹽、溴化金屬鹽、碘化金屬鹽等。又,亦可使用將上述金屬溶解於氫溴酸、鹽酸、氫碘酸等者作為鹽的水溶液。
又,前述原料溶液104a亦可混合酸。作為前述酸舉例為例如氫溴酸、鹽酸、氫碘酸等之鹵化氫、次氯酸、亞氯酸、次溴酸、亞溴酸、次碘酸、碘酸等之鹵素含氧酸、甲酸等之羧酸、硝酸等。
使用鹽酸或氯化鎵以外之材料時,如上述,必須至少混合鹽酸,而存在鎵離子及氯化物離子。基於成本之觀點,最佳為將金屬鎵溶解於鹽酸者,或為氯化鎵水溶液。
再者,前述原料溶液中,為了控制氧化鎵膜之電氣特性,亦可包含摻雜物。藉此,氧化鎵膜容易作為半導體膜加以利用。前述摻雜物並未特別限定。舉例為例如錫、鍺、矽、鈦、鋯、釩或鈮等之n型摻雜物,或銅、銀、錫、銥、銠等之p型摻雜物等。摻雜物濃度可為例如1×1016
/cm3
~1×1022
/cm3
,可為約1×1017
/cm3
以下之低濃度,亦可為約1×1020
/cm3
以上之高濃度。
(霧化部)
霧化部120係將前述原料溶液104a霧化產生霧。霧化手段若為可將原料溶液104a霧化則無特別限定,可為習知霧化手段,但較佳使用利用超音波振動之霧化手段。係由於可更穩定地霧化之故。
此等霧化部120之一例示於圖2。例如可包含收容原料溶液104a之霧產生源104、裝入可傳遞超音波振動之介質例如水105a之容器105、及安裝於容器105底面之超音波振動子106。詳細而言,包含收容原料溶液104a之容器的霧產生源104於收容水105a之容器105中,使用支撐體(未圖示)予以收納。於容器105底部具備超音波振動子106,超音波振動子106與激振器116連接。接著,激振器116振動時,超音波振動子106振動,經由水105a,將超音波傳遞至霧產生源104內,使原料溶液104a霧化而構成。
(搬送部)
搬送部109連接霧化部120與成膜部140。經由搬送部109,藉由載體氣體將霧自霧化部120之霧產生源104搬送至成膜部140之成膜室107。搬送部109可設為例如供給管109a。作為供給管109a,可使用例如石英管或樹脂製之管體等。
(成膜部)
於成膜部140,加熱霧產生熱反應,於基體110之表面一部分或全部進行成膜。成膜部140例如具備成膜室107,於成膜室107內設置基體110,並可具備用以加熱該基體110之加熱板108。加熱板108係如圖1所示,設於成膜室107之外部,亦可設於成膜室107內部。且,於成膜室107,於不對霧供給於基體110造成影響之位置,亦可設置排氣之排氣口112。又,本發明中,基體110設置於成膜室107之上面等,可設為面朝下,基體110亦可設置於成膜室107底面,設為面朝上。
熱反應只要可藉由加熱使霧反應即可,反應條件等並未特別限定。可對應於原料等適當設定。藉由加熱板108加熱基體110,而可加熱存在於基體110附近之霧。如此,不設置複雜的加熱機構,即可容易地加熱霧。又,如後述,此等加熱方法可容易控制加熱霧的時間。
基體110之加熱溫度較佳設為100~600℃之範圍。若為此等溫度範圍,則可更確實地加熱至使霧熱反應之溫度,可以低成本成膜氧化鎵膜。較佳為200~600℃之範圍,更佳為300~550℃之範圍。
熱反應可於真空下、非氧環境下、還原氣體環境下、空氣環境下及氧環境下之任一環境下進行,只要對應於成膜物適當設定即可。且反應壓力可於大氣壓下、加壓下或減壓下之任一條件下進行,但若為大氣壓下之成膜,由於裝置構成可簡略化而較佳。
(基體)
基體110若為可支撐可能成膜的膜者則未特別限定。前述基體110之材料亦未特別限定,可使用習知基體,可為有機化合物,亦可為無機化合物。舉例為例如聚碸、聚醚碸、聚苯硫醚、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、氟樹脂、鐵或鋁、不鏽鋼、金等之金屬、矽、硫、石英、玻璃、氧化鎵等,但並不限定於此。作為前述基體之形狀可為任何形狀,對於所有形狀均有效,舉例為例如平板或圓板等之板狀、纖維狀、棒狀、圓柱狀、角柱狀、筒狀、螺旋狀、球狀、環狀等,但本發明中,較佳為板狀基體。板狀基體之厚度並未特別限定,但較佳為10~2000μm,更佳為50~800μm。基體為板狀時,進行成膜之面之面積較佳為100mm2
以上。更佳口徑為2吋(50mm)以上。藉由使用此等基體,可以低成本獲得大面積之α-氧化鎵膜。進行成膜之面之面積上限並未特別限定,但可為例如71000mm2
以下。
(載體氣體供給部)
載體氣體供給部130具有供給載體氣體之載體氣體源102a,亦可具備用以調節自載體氣體源102a送出之載體氣體(以下稱為「主載體氣體」)之流量之流量控制閥103a。又,亦可根據需要具備供給稀釋用載體氣體之稀釋用載體氣體源102b或用以調節自稀釋用載體氣體源102b送出之稀釋用載體氣體之流量之流量控制閥103b。
載體氣體種類並未特別限定,可對應於成膜物適當選擇。舉例為例如氧、臭氧、氮或氬等之惰性氣體、或氫氣或合成氣體等之還原氣體等。又,載體氣體種類可為1種,亦可為2種以上。例如將與第1載體氣體相同之氣體以其以外之氣體稀釋(例如稀釋至10倍)之稀釋氣體等可進而使用作為第2載體氣體,亦可使用空氣。又,載體氣體之供給部位不僅可為1部位,亦可為2部位以上。
本說明書中,載體氣體之流量Q係指使用之載體氣體之總流量。上述例中,自載體氣體源102a送出之主載體氣體之流量與自稀釋用載體氣體102b送出之稀釋用載體氣體之流量之總流量設為載體氣體之流量Q。
(成膜方法)
其次,邊參考圖1,說明本發明之氧化鎵膜之製造方法之一例。
首先,將原料溶液104a收容於霧化部120之霧產生源104內,將基體110直接或經由成膜室107之壁設置於加熱板108上,使加熱板108作動。
其次,打開流量調節閥103a、103b,自載體氣體源102a、102b將載體氣體供給至成膜室107內,成膜室107之環境以載體氣體充分置換,同時分別調節主載體氣體之流量與稀釋用載體氣體之流量,控制載體氣體之流量Q。
產生霧之步驟中,使超音波振動子106振動,該振動通過水105a傳播至原料溶液104a,藉此使原料溶液104a霧化產生霧。其次,於藉由載體氣體搬送霧之步驟中,霧藉由載體氣體自霧化部120經由搬送部109搬送至成膜部140,導入至成膜室107內。於進行成膜之步驟中,導入至成膜室107內之霧於成膜室107內藉由加熱板108之熱進行熱處理並熱反應,而於基體110上成膜。
此處,針對調查加熱霧之時間T與氧化鎵膜之成膜速度之關係結果加以說明。
如關於熱反應之說明所述,霧之加熱認為係於成膜室107內之包含加熱面之空間發生。以下將該空間稱為「霧加熱區域」。圖3(a)~(e)中顯示成膜部140之成膜室107之構造具體例。又圖3中省略基體。如圖3所示,於成膜室107內加熱面於垂直方向張開之空間(以斜線顯示之區域)為霧加熱區域500。圖3(a)、(c)、(e)係成膜室107內之一部分區域成為霧加熱區域500之例,圖3(b)、(d)係成膜室107內之全部區域成為霧加熱區域500之例。
藉由調節載體氣體之流量Q,而可調節成膜原料的霧滯留於前述霧加熱區域500之時間。霧於滯留於霧加熱區域500之間被加熱,因此加熱霧之時間T等於霧滯留於霧加熱區域500之時間。亦即將霧加熱區域500之體積設為V時,相當於前述滯留時間之V÷Q相當於加熱霧之時間T(T=V/Q)。
首先,使用高度不同之成膜室對載體氣體流量Q與成膜速度之關係進行調查。成膜室高度設為0.5cm、0.09cm、0.9cm之3種,加熱板之傳熱面積均為113cm2
。亦即霧加熱區域之體積V分別為57cm3
、10cm3
、102cm3
。
圖4顯示載體氣體流量Q與成膜速度之關係。橫軸為載體氣體流量Q(L/min),縱軸為成膜速度(μm/小時)。各作圖如凡例所示,對應於霧加熱區域之體積V(57cm3
、10cm3
、102cm3
)。如由圖4所了解,可知成膜室高度(霧加熱區域之體積)於任何情況下,均具有成膜速度分布成為最大之峰值,對於載體氣體流量Q存在有成膜速度變高之條件。
使用該結果,算出霧加熱區域500之霧滯留時間(霧加熱區域500之體積V÷載體氣體流量Q),亦即算出加熱霧之時間T,加熱霧之時間T(秒)作為橫軸之圖表示於圖5。各作圖如凡例所示,與霧加熱區域之體積V(57cm3
、10cm3
、102cm3
)對應。如圖5所示,發現加熱霧之時間T若為0.002秒以上6秒以下,即使至少包含鎵離子及氯化物離子之溶液作為原料時,仍可以較大成膜速度進行氧化鎵膜之製造。
認為加熱霧之時間T過短(未達0.002秒)時,霧於反應之前即釋放至爐外,相反地加熱霧之時間T過長(長於6秒)時,霧的反應(蒸發)於爐內進行,不會於基板上引起反應。
鹵化物之水溶液與水形成共沸混合物。其中氯化物之共沸溫度比溴化物或碘化物低。因此,與溴化物或碘化物相比,霧的蒸發較快(亦即氯化物較容易蒸發),可解釋為於與使用以往材料之情況同等條件下,成膜速度會顯著降低。加熱霧之時間T較佳為0.02秒以上0.5秒以下,更佳為0.07秒以上0.3秒以下。
[實施例]
以下舉例實施例詳細說明本發明,但本發明不限定於此。
(實施例1)
基於上述調查結果,進行具有剛玉構造之氧化鎵(α-氧化鎵)之成膜。
首先,調整氯化鎵0.01mol/L之水溶液,將其設為原料溶液104a。將該原料溶液104a收容於霧產生源104內。其次,將作為基體110之4吋(直徑100mm)之c面藍寶石基板於成膜室107內與加熱板108鄰接設置。使加熱板108作動將溫度升溫至500℃。加熱板108之傳熱面積為113cm2
,成膜室內之高度為0.5cm,因此霧加熱區域500之體積為57cm3
。
接著,打開流量調節閥103a、103b,自載體氣體源102a、102b將作為載體氣體之氧氣供給至成膜室107內,成膜室107之環境以載體氣體充分置換。隨後,將主載體氣體之流量調節為0.4L/min,稀釋用載體氣體之流量調節為16L/min,載體氣體之流量Q調節為16.4L/min。該情況下之加熱霧時間為0.21秒。
其次,使超音波振動子106以2.4MHz振動,該振動通過水105a傳播至原料溶液104a,藉此使原料溶液104a霧化產生霧。該霧藉由載體氣體經由搬送管109a導入成膜室107內。接著於大氣壓下、500℃之條件,霧於成膜室107內熱反應,而於基體110上形成α-氧化鎵之薄膜。成膜時間為30分鐘
針對所得基體110上之薄膜,使用干涉式膜厚計測定膜厚。測定部位設於基體110之面內17點,算出平均值獲得平均膜厚。所得平均膜厚除以成膜時間30分鐘之值為成膜速度。
針對所得α-氧化鎵之薄膜進行X射線繞射測定,評價結晶性。具體而言,測定α-氧化鎵之(0006)面繞射波峰之搖擺曲線,求出其半值全寬。
(比較例1)
除了將稀釋用載體氣體流量設為0L/min,將載體氣體流量Q設為0.4L/min,將加熱霧之時間設為8.55秒以外,以與實施例1同樣條件進行成膜、評價。
(實施例2)
加熱板108之傳熱面積仍為113cm2
,使用成膜室內之高度為0.09cm(霧加熱區域之體積=10cm3
)之成膜室。又,主載體氣體之流量調節為0.08L/min,稀釋用載體氣體之流量調節為2.82L/min,載體氣體之流量Q調節為2.9L/min。該情況下之加熱霧時間為0.21秒。除此以外,以與實施例1同樣條件進行成膜、評價。
(比較例2)
除了將稀釋用載體氣體流量設為0L/min,將載體氣體流量Q設為0.08L/min,將加熱霧之時間設為7.50秒以外,以與實施例2同樣條件進行成膜、評價。
(實施例3)
加熱板108之傳熱面積仍為113cm2
,使用成膜室內之高度為0.9cm(霧加熱區域之體積=102cm3
)之成膜室。又,主載體氣體之流量調節為0.8L/min,稀釋用載體氣體之流量調節為28.7L/min,載體氣體流量Q調節為29.5L/min。該情況下之加熱霧時間為0.21秒。除此以外,以與實施例1、2同樣條件進行成膜、評價。
(比較例3)
除了將稀釋用載體氣體流量設為0L/min,將載體氣體流量Q設為0.8L/min,將加熱霧之時間設為7.65秒以外,以與實施例3同樣條件進行成膜、評價。
實施例1-3、比較例1-3之評價結果示於表1。可知實施例1-3之成膜速度與比較例1-3相比顯著較高。
又,實施例1-3之半值全寬均較比較例1-3更小,可知結晶性大幅改善。認為如比較例1-3之加熱霧之時間較長,則霧中之水分在到達設置於爐內之基體之前即蒸發,形成粉體,其會附著於基體而使結晶性惡化。可知藉由縮短加熱霧之時間而抑制如上述之粉體形成,可形成結晶性良好之α-氧化鎵。
又,本發明並非限定於上述實施形態者。上述實施形態為例示,凡具有與本發明申請專利範圍中記載之技術思想實質相同構成,發揮相同作用效果者,均包含於本發明之技術範圍。
101:成膜裝置
102a:載體氣體源
102b:稀釋用載體氣體源
103a:流量調節閥
103b:流量調節閥
104:霧產生源
104a:原料溶液
105:容器
105a:水
106:超音波振動子
107:成膜室
108:加熱板
109:搬送部
109a:供給管
110:基體
112:排氣口
116:激振器
120:霧化部
130:載體氣體供給部
140:成膜部
500:霧加熱區域
[圖1]係顯示本發明之成膜方法所用之成膜裝置之一例之概略構成圖。
[圖2]係說明成膜裝置中霧化部之一例的圖。
[圖3]係顯示霧加熱區域之圖。
[圖4]係顯示載體氣體流量Q與成膜速度之關係的圖。
[圖5]係顯示霧之加熱時間T與成膜速度之關係的圖。
101:成膜裝置
102a:載體氣體源
102b:稀釋用載體氣體源
103a:流量調節閥
103b:流量調節閥
104:霧產生源
104a:原料溶液
105:容器
105a:水
106:超音波振動子
107:成膜室
108:加熱板
109:搬送部
109a:供給管
110:基體
112:排氣口
120:霧化部
130:載體氣體供給部
140:成膜部
Claims (5)
- 一種氧化鎵膜之製造方法,其係將原料溶液霧化或液滴化而產生之霧,使用載體氣體進行搬送,加熱前述霧,而於基體上使前述霧熱反應並進行成膜之氧化鎵膜之製造方法,且 使用至少包含氯化物離子與鎵離子之原料溶液作為前述原料溶液,加熱前述霧之時間為0.002秒以上6秒以下。
- 如請求項1之氧化鎵膜之製造方法,其中加熱前述霧之時間為0.02秒以上0.5秒以下。
- 如請求項1或2之氧化鎵膜之製造方法,其中加熱前述霧之時間為0.07秒以上0.3秒以下。
- 如請求項1或2之氧化鎵膜之製造方法,其中使前述霧熱反應之前述基體之加熱溫度為100℃以上600℃以下。
- 如請求項1或2之氧化鎵膜之製造方法,其中使用板狀且進行成膜的面之面積為100mm2 以上者作為前述基體。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105986246A (zh) * | 2015-01-29 | 2016-10-05 | Flosfia株式会社 | 成膜装置和成膜方法 |
JP2018070422A (ja) * | 2016-11-01 | 2018-05-10 | 国立大学法人 和歌山大学 | 酸化ガリウムの製造方法及び結晶成長装置 |
Family Cites Families (22)
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---|---|---|---|---|
JP2671367B2 (ja) | 1988-04-06 | 1997-10-29 | 富士通株式会社 | 気相エピタキシャル成長装置 |
JP2003007629A (ja) * | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
JP2004224675A (ja) * | 2003-01-27 | 2004-08-12 | Fuji Photo Film Co Ltd | 13族窒化物半導体ナノ粒子の製造方法 |
JP5124760B2 (ja) | 2004-04-19 | 2013-01-23 | 静雄 藤田 | 成膜方法及び成膜装置 |
US7390704B2 (en) * | 2004-06-16 | 2008-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Laser process apparatus, laser irradiation method, and method for manufacturing semiconductor device |
JP5575482B2 (ja) * | 2006-11-22 | 2014-08-20 | ソイテック | 単結晶iii−v族半導体材料のエピタキシャル堆積法、及び堆積システム |
JP2012046772A (ja) | 2010-08-24 | 2012-03-08 | Sharp Corp | ミストcvd装置及びミスト発生方法 |
JP5793732B2 (ja) * | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
US20130047918A1 (en) * | 2011-08-22 | 2013-02-28 | Soitec | Deposition systems including a precursor gas furnace within a reaction chamber, and related methods |
JP6137668B2 (ja) | 2012-08-26 | 2017-05-31 | 国立大学法人 熊本大学 | 酸化亜鉛結晶層の製造方法及びミスト化学気相成長装置 |
JP5397794B1 (ja) | 2013-06-04 | 2014-01-22 | Roca株式会社 | 酸化物結晶薄膜の製造方法 |
JP2016051824A (ja) | 2014-08-29 | 2016-04-11 | 高知県公立大学法人 | エピタキシャル成長方法および成長装置ならびに量子井戸構造の作製方法 |
JP2016126988A (ja) | 2015-01-08 | 2016-07-11 | 株式会社Flosfia | 透明導電膜および積層構造体 |
JP6547225B2 (ja) | 2015-02-06 | 2019-07-24 | 高知県公立大学法人 | 膜厚算出方法、成膜装置およびプログラム |
JP6876895B2 (ja) * | 2015-02-25 | 2021-05-26 | 株式会社Flosfia | 結晶性酸化物半導体膜、半導体装置 |
JP6620328B2 (ja) | 2015-09-08 | 2019-12-18 | 株式会社Flosfia | 深紫外光発生用ターゲット、深紫外光源および深紫外発光素子 |
JP6945121B2 (ja) * | 2015-09-30 | 2021-10-06 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
JP6732201B2 (ja) * | 2015-11-11 | 2020-07-29 | 国立大学法人京都工芸繊維大学 | 発光素子 |
TWI686952B (zh) * | 2015-12-18 | 2020-03-01 | 日商Flosfia股份有限公司 | 半導體裝置 |
US11424320B2 (en) * | 2016-06-30 | 2022-08-23 | Flosfia Inc. | P-type oxide semiconductor and method for manufacturing same |
US10804362B2 (en) * | 2016-08-31 | 2020-10-13 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
JP6934852B2 (ja) | 2018-12-18 | 2021-09-15 | 信越化学工業株式会社 | 酸化ガリウム膜の製造方法 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105986246A (zh) * | 2015-01-29 | 2016-10-05 | Flosfia株式会社 | 成膜装置和成膜方法 |
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