JP6862141B2 - 発光素子パッケージ及び照明装置 - Google Patents

発光素子パッケージ及び照明装置 Download PDF

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Publication number
JP6862141B2
JP6862141B2 JP2016200889A JP2016200889A JP6862141B2 JP 6862141 B2 JP6862141 B2 JP 6862141B2 JP 2016200889 A JP2016200889 A JP 2016200889A JP 2016200889 A JP2016200889 A JP 2016200889A JP 6862141 B2 JP6862141 B2 JP 6862141B2
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Japan
Prior art keywords
lead frame
cavity
light emitting
emitting element
boundary point
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Expired - Fee Related
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JP2016200889A
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English (en)
Japanese (ja)
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JP2017076793A5 (enExample
JP2017076793A (ja
Inventor
イム，チャンマン
キム，ウォンチョン
キム，ヒョンジン
ミン，ボンクル
チョン，ホヨン
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Priority claimed from KR1020160122480A external-priority patent/KR101831249B1/ko
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2017076793A publication Critical patent/JP2017076793A/ja
Publication of JP2017076793A5 publication Critical patent/JP2017076793A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/442—Shapes or dispositions of multiple leadframes in a single chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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JP2016200889A 2015-10-14 2016-10-12 発光素子パッケージ及び照明装置 Expired - Fee Related JP6862141B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2015-0143629 2015-10-14
KR20150143629 2015-10-14
KR1020160122480A KR101831249B1 (ko) 2015-10-14 2016-09-23 발광소자 패키지 및 조명 장치
KR10-2016-0122480 2016-09-23

Publications (3)

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JP2017076793A JP2017076793A (ja) 2017-04-20
JP2017076793A5 JP2017076793A5 (enExample) 2019-11-28
JP6862141B2 true JP6862141B2 (ja) 2021-04-21

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JP2016200889A Expired - Fee Related JP6862141B2 (ja) 2015-10-14 2016-10-12 発光素子パッケージ及び照明装置

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US (4) US9793457B2 (enExample)
EP (1) EP3157058B1 (enExample)
JP (1) JP6862141B2 (enExample)

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WO2018233840A1 (en) * 2017-06-22 2018-12-27 Osram Opto Semiconductors Gmbh OPTOELECTRONIC COMPONENT
JP2019033209A (ja) * 2017-08-09 2019-02-28 シチズン時計株式会社 発光ダイオード
KR102385940B1 (ko) 2017-09-01 2022-04-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 장치
JP7001814B2 (ja) * 2017-09-08 2022-01-20 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光部品および発光部品を製造するための方法
JP6793139B2 (ja) * 2018-01-25 2020-12-02 日機装株式会社 半導体発光装置
WO2020040740A1 (en) * 2018-08-21 2020-02-27 Hewlett-Packard Development Company, L.P. P-type semiconductor layers coupled to n-type semiconductor layers
KR102861696B1 (ko) * 2018-09-07 2025-09-18 서울반도체 주식회사 발광 다이오드 패키지
JP7337590B2 (ja) * 2019-08-05 2023-09-04 ローム株式会社 半導体発光装置
JP7295437B2 (ja) * 2019-11-29 2023-06-21 日亜化学工業株式会社 発光装置
DE102022112609A1 (de) * 2022-05-19 2023-11-23 Ams-Osram International Gmbh Gehäuse und leiterrahmeneinheit

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KR102042150B1 (ko) * 2012-09-13 2019-11-07 엘지이노텍 주식회사 발광 소자 및 조명 시스템
KR102053287B1 (ko) * 2013-04-29 2019-12-06 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
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Also Published As

Publication number Publication date
USRE48892E1 (en) 2022-01-11
EP3157058A1 (en) 2017-04-19
US9793457B2 (en) 2017-10-17
US20170110637A1 (en) 2017-04-20
US20170373236A1 (en) 2017-12-28
US10170676B2 (en) 2019-01-01
EP3157058B1 (en) 2020-02-26
USRE49146E1 (en) 2022-07-19
JP2017076793A (ja) 2017-04-20

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