JP6838063B2 - 金属酸化物を含有する材料、その製造方法及びその使用方法 - Google Patents

金属酸化物を含有する材料、その製造方法及びその使用方法 Download PDF

Info

Publication number
JP6838063B2
JP6838063B2 JP2018527104A JP2018527104A JP6838063B2 JP 6838063 B2 JP6838063 B2 JP 6838063B2 JP 2018527104 A JP2018527104 A JP 2018527104A JP 2018527104 A JP2018527104 A JP 2018527104A JP 6838063 B2 JP6838063 B2 JP 6838063B2
Authority
JP
Japan
Prior art keywords
ion
composition
solvent
metal salt
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018527104A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019508509A5 (enExample
JP2019508509A (ja
Inventor
ヤオ・フェイロン
ラーマン・エム・ダリル
マッケンジー・ダグラス
チョ・ジュンヨン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of JP2019508509A publication Critical patent/JP2019508509A/ja
Publication of JP2019508509A5 publication Critical patent/JP2019508509A5/ja
Application granted granted Critical
Publication of JP6838063B2 publication Critical patent/JP6838063B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/006Anti-reflective coatings
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/48Stabilisers against degradation by oxygen, light or heat

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018527104A 2015-12-22 2016-12-20 金属酸化物を含有する材料、その製造方法及びその使用方法 Active JP6838063B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/978,232 US10241409B2 (en) 2015-12-22 2015-12-22 Materials containing metal oxides, processes for making same, and processes for using same
US14/978,232 2015-12-22
PCT/EP2016/081970 WO2017108822A1 (en) 2015-12-22 2016-12-20 Materials containing metal oxides, processes for making same, and processes for using same

Publications (3)

Publication Number Publication Date
JP2019508509A JP2019508509A (ja) 2019-03-28
JP2019508509A5 JP2019508509A5 (enExample) 2020-02-06
JP6838063B2 true JP6838063B2 (ja) 2021-03-03

Family

ID=57838322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018527104A Active JP6838063B2 (ja) 2015-12-22 2016-12-20 金属酸化物を含有する材料、その製造方法及びその使用方法

Country Status (8)

Country Link
US (1) US10241409B2 (enExample)
EP (1) EP3394675B1 (enExample)
JP (1) JP6838063B2 (enExample)
KR (1) KR102324679B1 (enExample)
CN (1) CN108139673B (enExample)
IL (1) IL257619A (enExample)
TW (1) TWI689555B (enExample)
WO (1) WO2017108822A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3360933A1 (de) * 2017-02-08 2018-08-15 Evonik Degussa GmbH Direkt-strukturierbare formulierungen auf der basis von metalloxid-prekursoren zur herstellung oxidischer schichten
US20210109451A1 (en) * 2019-10-11 2021-04-15 Merck Patent Gmbh Spin-on metal oxide materials of high etch resistance useful in image reversal technique and related semiconductor manufacturing processes
WO2024128013A1 (ja) * 2022-12-16 2024-06-20 Jsr株式会社 レジスト下層膜形成用組成物、半導体基板の製造方法、レジスト下層膜の形成方法及び金属化合物の製造方法
WO2025178071A1 (ja) * 2024-02-21 2025-08-28 株式会社巴川コーポレーション ドライエッチングマスク用組成物

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646707A (en) 1981-03-30 1987-03-03 Pfefferle William C Method of operating catalytic ignition engines and apparatus therefor
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US7384680B2 (en) 1997-07-21 2008-06-10 Nanogram Corporation Nanoparticle-based power coatings and corresponding structures
US6952504B2 (en) 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US6849334B2 (en) 2001-08-17 2005-02-01 Neophotonics Corporation Optical materials and optical devices
US20090075083A1 (en) 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US8568684B2 (en) 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
JP3383838B2 (ja) * 1999-02-25 2003-03-10 独立行政法人産業技術総合研究所 金属酸化物の製造方法及び微細パターンの形成方法
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6890448B2 (en) 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
WO2001098834A1 (en) 2000-06-21 2001-12-27 Asahi Glass Company, Limited Resist composition
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
KR100776551B1 (ko) 2001-02-09 2007-11-16 아사히 가라스 가부시키가이샤 레지스트 조성물
US6723435B1 (en) 2001-08-28 2004-04-20 Nanogram Corporation Optical fiber preforms
JP3737729B2 (ja) * 2001-09-26 2006-01-25 株式会社東芝 非水電解液電池および非水電解液
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US7521097B2 (en) 2003-06-06 2009-04-21 Nanogram Corporation Reactive deposition for electrochemical cell production
US8865271B2 (en) 2003-06-06 2014-10-21 Neophotonics Corporation High rate deposition for the formation of high quality optical coatings
KR101158298B1 (ko) 2003-12-26 2012-06-26 닛산 가가쿠 고교 가부시키 가이샤 하드 마스크용 도포형 질화막 형성 조성물
US7491431B2 (en) 2004-12-20 2009-02-17 Nanogram Corporation Dense coating formation by reactive deposition
US20060248665A1 (en) 2005-05-06 2006-11-09 Pluyter Johan G L Encapsulated fragrance materials and methods for making same
US8039201B2 (en) 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
KR101315268B1 (ko) * 2009-09-28 2013-10-08 다이이치 고교 세이야쿠 가부시키가이샤 금속염 함유 조성물, 기판 및 기판의 제조 방법
KR101212626B1 (ko) * 2010-03-05 2012-12-14 연세대학교 산학협력단 금속산화물 박막 및 그 제조 방법, 금속산화물 박막용 용액
RU2590434C2 (ru) * 2011-02-02 2016-07-10 Адвенира Энтерпрайзис, Инк. Растворы-предшественники нанокомпозитов, нанесенных из раствора, способы получения тонких пленок и тонкие пленки, полученные этими способами
JP5823141B2 (ja) * 2011-03-09 2015-11-25 株式会社Adeka 酸化亜鉛系膜の製造方法
US8795774B2 (en) * 2012-09-23 2014-08-05 Rohm And Haas Electronic Materials Llc Hardmask
US9315636B2 (en) * 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
JP6053725B2 (ja) * 2013-07-04 2016-12-27 国立大学法人京都大学 銅系ナノ粒子分散液とその製造方法及びその分散液から製造される銅導体膜が形成された基材
US9725618B2 (en) * 2013-10-07 2017-08-08 Nissan Chemical Industries, Ltd. Metal-containing resist underlayer film-forming composition containing polyacid

Also Published As

Publication number Publication date
KR102324679B1 (ko) 2021-11-10
IL257619A (en) 2018-06-28
KR20180094850A (ko) 2018-08-24
EP3394675A1 (en) 2018-10-31
US10241409B2 (en) 2019-03-26
CN108139673A (zh) 2018-06-08
EP3394675B1 (en) 2020-01-29
TWI689555B (zh) 2020-04-01
TW201739847A (zh) 2017-11-16
CN108139673B (zh) 2021-06-15
WO2017108822A1 (en) 2017-06-29
JP2019508509A (ja) 2019-03-28
US20170176860A1 (en) 2017-06-22

Similar Documents

Publication Publication Date Title
JP7050137B2 (ja) ハードマスクおよび充填材料として安定な金属化合物、その組成物、およびその使用方法
JP6430954B2 (ja) 安定な金属化合物、その組成物、およびその使用方法
TWI606098B (zh) 可溶性金屬氧化物羧酸鹽之旋轉塗佈組合物及其使用方法
KR101820195B1 (ko) 반사방지 코팅 조성물 및 이의 방법
JP6122426B2 (ja) 下層組成物及びそれの方法
KR20190098217A (ko) 금속 산화물 나노입자 및 유기 중합체를 함유하는 스핀-온 물질의 조성물
JP5938989B2 (ja) 多層レジストプロセス用無機膜形成組成物及びパターン形成方法
JP2007258683A (ja) 有機シラン系重合体を含むレジスト下層膜用ハードマスク組成物およびこれを用いた半導体集積回路デバイスの製造方法
JP6838063B2 (ja) 金属酸化物を含有する材料、その製造方法及びその使用方法
TWI729103B (zh) 光阻圖型被覆用水溶液及使用此之圖型形成方法
WO2018155377A1 (ja) レジストプロセス用膜形成材料、パターン形成方法及びポリシロキサン
JP7301151B2 (ja) 下層膜形成用組成物、レジストパターン形成方法、電子デバイスの製造方法
US20210109451A1 (en) Spin-on metal oxide materials of high etch resistance useful in image reversal technique and related semiconductor manufacturing processes
WO2025142433A1 (ja) レジスト下層膜形成組成物
KR100713238B1 (ko) 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
CN119735984A (zh) 抗反射组合物、抗反射膜、图案化工艺、图案化基底、半导体器件及其制备方法
WO2021230185A1 (ja) 化合物及びその製造方法、組成物、レジスト膜、並びにパターン形成方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20191218

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20191218

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20200107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200212

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20200226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200427

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200907

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20200908

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20201007

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210120

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210210

R150 Certificate of patent or registration of utility model

Ref document number: 6838063

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250