JP2019508509A5 - - Google Patents

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Publication number
JP2019508509A5
JP2019508509A5 JP2018527104A JP2018527104A JP2019508509A5 JP 2019508509 A5 JP2019508509 A5 JP 2019508509A5 JP 2018527104 A JP2018527104 A JP 2018527104A JP 2018527104 A JP2018527104 A JP 2018527104A JP 2019508509 A5 JP2019508509 A5 JP 2019508509A5
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Japan
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composition
ion
solvent
metal salt
group
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JP2018527104A
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Japanese (ja)
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JP6838063B2 (ja
JP2019508509A (ja
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Priority claimed from US14/978,232 external-priority patent/US10241409B2/en
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Publication of JP2019508509A5 publication Critical patent/JP2019508509A5/ja
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JP2018527104A 2015-12-22 2016-12-20 金属酸化物を含有する材料、その製造方法及びその使用方法 Active JP6838063B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/978,232 US10241409B2 (en) 2015-12-22 2015-12-22 Materials containing metal oxides, processes for making same, and processes for using same
US14/978,232 2015-12-22
PCT/EP2016/081970 WO2017108822A1 (en) 2015-12-22 2016-12-20 Materials containing metal oxides, processes for making same, and processes for using same

Publications (3)

Publication Number Publication Date
JP2019508509A JP2019508509A (ja) 2019-03-28
JP2019508509A5 true JP2019508509A5 (enExample) 2020-02-06
JP6838063B2 JP6838063B2 (ja) 2021-03-03

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JP2018527104A Active JP6838063B2 (ja) 2015-12-22 2016-12-20 金属酸化物を含有する材料、その製造方法及びその使用方法

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Country Link
US (1) US10241409B2 (enExample)
EP (1) EP3394675B1 (enExample)
JP (1) JP6838063B2 (enExample)
KR (1) KR102324679B1 (enExample)
CN (1) CN108139673B (enExample)
IL (1) IL257619A (enExample)
TW (1) TWI689555B (enExample)
WO (1) WO2017108822A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
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EP3360933A1 (de) * 2017-02-08 2018-08-15 Evonik Degussa GmbH Direkt-strukturierbare formulierungen auf der basis von metalloxid-prekursoren zur herstellung oxidischer schichten
US20210109451A1 (en) * 2019-10-11 2021-04-15 Merck Patent Gmbh Spin-on metal oxide materials of high etch resistance useful in image reversal technique and related semiconductor manufacturing processes
WO2024128013A1 (ja) * 2022-12-16 2024-06-20 Jsr株式会社 レジスト下層膜形成用組成物、半導体基板の製造方法、レジスト下層膜の形成方法及び金属化合物の製造方法
WO2025178071A1 (ja) * 2024-02-21 2025-08-28 株式会社巴川コーポレーション ドライエッチングマスク用組成物

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