TWI689555B - 包含金屬氧化物之材料、其製造方法及其使用方法 - Google Patents

包含金屬氧化物之材料、其製造方法及其使用方法 Download PDF

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Publication number
TWI689555B
TWI689555B TW105137235A TW105137235A TWI689555B TW I689555 B TWI689555 B TW I689555B TW 105137235 A TW105137235 A TW 105137235A TW 105137235 A TW105137235 A TW 105137235A TW I689555 B TWI689555 B TW I689555B
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TW
Taiwan
Prior art keywords
composition
combinations
group
solvent
metal
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TW105137235A
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English (en)
Chinese (zh)
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TW201739847A (zh
Inventor
暉蓉 姚
M 戴莉爾 萊罕
道格拉斯 麥克肯茲
趙俊衍
Original Assignee
盧森堡商Az電子材料(盧森堡)股份有限公司
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Publication of TW201739847A publication Critical patent/TW201739847A/zh
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/006Anti-reflective coatings
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/48Stabilisers against degradation by oxygen, light or heat
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW105137235A 2015-12-22 2016-11-15 包含金屬氧化物之材料、其製造方法及其使用方法 TWI689555B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/978,232 US10241409B2 (en) 2015-12-22 2015-12-22 Materials containing metal oxides, processes for making same, and processes for using same
US14/978,232 2015-12-22

Publications (2)

Publication Number Publication Date
TW201739847A TW201739847A (zh) 2017-11-16
TWI689555B true TWI689555B (zh) 2020-04-01

Family

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Family Applications (1)

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TW105137235A TWI689555B (zh) 2015-12-22 2016-11-15 包含金屬氧化物之材料、其製造方法及其使用方法

Country Status (8)

Country Link
US (1) US10241409B2 (enExample)
EP (1) EP3394675B1 (enExample)
JP (1) JP6838063B2 (enExample)
KR (1) KR102324679B1 (enExample)
CN (1) CN108139673B (enExample)
IL (1) IL257619A (enExample)
TW (1) TWI689555B (enExample)
WO (1) WO2017108822A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3360933A1 (de) * 2017-02-08 2018-08-15 Evonik Degussa GmbH Direkt-strukturierbare formulierungen auf der basis von metalloxid-prekursoren zur herstellung oxidischer schichten
US20210109451A1 (en) * 2019-10-11 2021-04-15 Merck Patent Gmbh Spin-on metal oxide materials of high etch resistance useful in image reversal technique and related semiconductor manufacturing processes
WO2024128013A1 (ja) * 2022-12-16 2024-06-20 Jsr株式会社 レジスト下層膜形成用組成物、半導体基板の製造方法、レジスト下層膜の形成方法及び金属化合物の製造方法
WO2025178071A1 (ja) * 2024-02-21 2025-08-28 株式会社巴川コーポレーション ドライエッチングマスク用組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102548895A (zh) * 2009-09-28 2012-07-04 第一工业制药株式会社 含金属盐的组合物、基板及基板的制造方法
CN104781262A (zh) * 2012-12-07 2015-07-15 Az电子材料卢森堡有限公司 稳定的金属化合物、它们的组合物以及它们的使用方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646707A (en) 1981-03-30 1987-03-03 Pfefferle William C Method of operating catalytic ignition engines and apparatus therefor
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US7384680B2 (en) 1997-07-21 2008-06-10 Nanogram Corporation Nanoparticle-based power coatings and corresponding structures
US6952504B2 (en) 2001-12-21 2005-10-04 Neophotonics Corporation Three dimensional engineering of planar optical structures
US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US6849334B2 (en) 2001-08-17 2005-02-01 Neophotonics Corporation Optical materials and optical devices
US20090075083A1 (en) 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US8568684B2 (en) 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
JP3383838B2 (ja) * 1999-02-25 2003-03-10 独立行政法人産業技術総合研究所 金属酸化物の製造方法及び微細パターンの形成方法
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6890448B2 (en) 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
WO2001098834A1 (en) 2000-06-21 2001-12-27 Asahi Glass Company, Limited Resist composition
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
KR100776551B1 (ko) 2001-02-09 2007-11-16 아사히 가라스 가부시키가이샤 레지스트 조성물
US6723435B1 (en) 2001-08-28 2004-04-20 Nanogram Corporation Optical fiber preforms
JP3737729B2 (ja) * 2001-09-26 2006-01-25 株式会社東芝 非水電解液電池および非水電解液
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US7521097B2 (en) 2003-06-06 2009-04-21 Nanogram Corporation Reactive deposition for electrochemical cell production
US8865271B2 (en) 2003-06-06 2014-10-21 Neophotonics Corporation High rate deposition for the formation of high quality optical coatings
KR101158298B1 (ko) 2003-12-26 2012-06-26 닛산 가가쿠 고교 가부시키 가이샤 하드 마스크용 도포형 질화막 형성 조성물
US7491431B2 (en) 2004-12-20 2009-02-17 Nanogram Corporation Dense coating formation by reactive deposition
US20060248665A1 (en) 2005-05-06 2006-11-09 Pluyter Johan G L Encapsulated fragrance materials and methods for making same
US8039201B2 (en) 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
KR101212626B1 (ko) * 2010-03-05 2012-12-14 연세대학교 산학협력단 금속산화물 박막 및 그 제조 방법, 금속산화물 박막용 용액
RU2590434C2 (ru) * 2011-02-02 2016-07-10 Адвенира Энтерпрайзис, Инк. Растворы-предшественники нанокомпозитов, нанесенных из раствора, способы получения тонких пленок и тонкие пленки, полученные этими способами
JP5823141B2 (ja) * 2011-03-09 2015-11-25 株式会社Adeka 酸化亜鉛系膜の製造方法
US8795774B2 (en) * 2012-09-23 2014-08-05 Rohm And Haas Electronic Materials Llc Hardmask
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
JP6053725B2 (ja) * 2013-07-04 2016-12-27 国立大学法人京都大学 銅系ナノ粒子分散液とその製造方法及びその分散液から製造される銅導体膜が形成された基材
US9725618B2 (en) * 2013-10-07 2017-08-08 Nissan Chemical Industries, Ltd. Metal-containing resist underlayer film-forming composition containing polyacid

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102548895A (zh) * 2009-09-28 2012-07-04 第一工业制药株式会社 含金属盐的组合物、基板及基板的制造方法
CN104781262A (zh) * 2012-12-07 2015-07-15 Az电子材料卢森堡有限公司 稳定的金属化合物、它们的组合物以及它们的使用方法

Also Published As

Publication number Publication date
KR102324679B1 (ko) 2021-11-10
IL257619A (en) 2018-06-28
KR20180094850A (ko) 2018-08-24
EP3394675A1 (en) 2018-10-31
US10241409B2 (en) 2019-03-26
CN108139673A (zh) 2018-06-08
EP3394675B1 (en) 2020-01-29
TW201739847A (zh) 2017-11-16
CN108139673B (zh) 2021-06-15
WO2017108822A1 (en) 2017-06-29
JP6838063B2 (ja) 2021-03-03
JP2019508509A (ja) 2019-03-28
US20170176860A1 (en) 2017-06-22

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