JP6815745B2 - 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法 - Google Patents

背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法 Download PDF

Info

Publication number
JP6815745B2
JP6815745B2 JP2016092266A JP2016092266A JP6815745B2 JP 6815745 B2 JP6815745 B2 JP 6815745B2 JP 2016092266 A JP2016092266 A JP 2016092266A JP 2016092266 A JP2016092266 A JP 2016092266A JP 6815745 B2 JP6815745 B2 JP 6815745B2
Authority
JP
Japan
Prior art keywords
platen
semiconductor substrate
gas pipe
stem
flange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016092266A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016213456A (ja
JP2016213456A5 (OSRAM
Inventor
トロイ・アラン・ゴム
ニック・レイ・ラインバーガー・ジュニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2016213456A publication Critical patent/JP2016213456A/ja
Publication of JP2016213456A5 publication Critical patent/JP2016213456A5/ja
Application granted granted Critical
Publication of JP6815745B2 publication Critical patent/JP6815745B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B32B37/1018—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure using only vacuum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45597—Reactive back side gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Fluid Mechanics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2016092266A 2015-05-12 2016-05-02 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法 Active JP6815745B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/710,132 2015-05-12
US14/710,132 US9738975B2 (en) 2015-05-12 2015-05-12 Substrate pedestal module including backside gas delivery tube and method of making

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020213139A Division JP7168642B2 (ja) 2015-05-12 2020-12-23 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2016213456A JP2016213456A (ja) 2016-12-15
JP2016213456A5 JP2016213456A5 (OSRAM) 2019-08-22
JP6815745B2 true JP6815745B2 (ja) 2021-01-20

Family

ID=57276852

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016092266A Active JP6815745B2 (ja) 2015-05-12 2016-05-02 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法
JP2020213139A Active JP7168642B2 (ja) 2015-05-12 2020-12-23 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2020213139A Active JP7168642B2 (ja) 2015-05-12 2020-12-23 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法

Country Status (4)

Country Link
US (4) US9738975B2 (OSRAM)
JP (2) JP6815745B2 (OSRAM)
KR (2) KR102641003B1 (OSRAM)
CN (2) CN112063995B (OSRAM)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738975B2 (en) * 2015-05-12 2017-08-22 Lam Research Corporation Substrate pedestal module including backside gas delivery tube and method of making
US10177024B2 (en) * 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
JP2017077528A (ja) * 2015-10-20 2017-04-27 信越化学工業株式会社 フォトマスク関連基板に用いる基板洗浄装置及び基板洗浄方法
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10147610B1 (en) 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery
US11289355B2 (en) * 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11004722B2 (en) * 2017-07-20 2021-05-11 Applied Materials, Inc. Lift pin assembly
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
JP6839789B2 (ja) * 2017-11-21 2021-03-10 ワトロー エレクトリック マニュファクチュアリング カンパニー 原子保護層を有するセラミックペデスタル
US11015247B2 (en) 2017-12-08 2021-05-25 Lam Research Corporation Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
WO2019152528A1 (en) 2018-01-31 2019-08-08 Lam Research Corporation Electrostatic chuck (esc) pedestal voltage isolation
US11086233B2 (en) 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US11715652B2 (en) * 2018-09-28 2023-08-01 Ngk Insulators, Ltd. Member for semiconductor manufacturing apparatus
CN109594063A (zh) * 2018-12-27 2019-04-09 西安奕斯伟硅片技术有限公司 一种外延反应设备
DE102019101657A1 (de) * 2019-01-23 2020-07-23 Berliner Glas Kgaa Herbert Kubatz Gmbh & Co Haltevorrichtung zur elektrostatischen Halterung eines Bauteils mit einem durch Diffusionsbonden gefügten Grundkörper und Verfahren zu deren Herstellung
FI129040B (fi) 2019-06-06 2021-05-31 Picosun Oy Fluidia läpäisevien materiaalien päällystäminen
JP7146108B2 (ja) * 2020-01-15 2022-10-03 日本特殊陶業株式会社 保持装置
KR20220012999A (ko) 2020-02-11 2022-02-04 램 리써치 코포레이션 웨이퍼 베벨/에지 상의 증착을 제어하기 위한 캐리어 링 설계들
US11699602B2 (en) * 2020-07-07 2023-07-11 Applied Materials, Inc. Substrate support assemblies and components
KR102475295B1 (ko) * 2020-10-08 2022-12-08 주식회사 메카로 비대칭 열선 구조를 가진 페데스탈 히터 블럭
WO2022093273A1 (en) * 2020-10-30 2022-05-05 Applied Materials, Inc. Rf delivery and feedthrough assembly to a processing chamber
CN117063269A (zh) * 2021-03-25 2023-11-14 朗姆研究公司 在高温沉积序列中操作的低温基座的传导冷却
CN118176174A (zh) 2021-09-02 2024-06-11 朗姆研究公司 用于复合陶瓷体的接合技术
US12476091B2 (en) * 2023-04-18 2025-11-18 Tokyo Electron Limited Electrostatic chuck and method of operation for plasma processing
US12412769B2 (en) * 2023-05-16 2025-09-09 Applied Materials, Inc. Electrostatic chucks with hybrid pucks to improve thermal performance and leakage current stability

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69432383D1 (de) 1993-05-27 2003-05-08 Applied Materials Inc Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase
JPH07153706A (ja) 1993-05-27 1995-06-16 Applied Materials Inc サセプタ装置
US6544379B2 (en) * 1993-09-16 2003-04-08 Hitachi, Ltd. Method of holding substrate and substrate holding system
US5569356A (en) 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US6616767B2 (en) 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JP3641115B2 (ja) * 1997-10-08 2005-04-20 大日本スクリーン製造株式会社 基板処理装置
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US6464795B1 (en) * 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US6223447B1 (en) 2000-02-15 2001-05-01 Applied Materials, Inc. Fastening device for a purge ring
US6494955B1 (en) * 2000-02-15 2002-12-17 Applied Materials, Inc. Ceramic substrate support
JP4398064B2 (ja) * 2000-05-12 2010-01-13 日本発條株式会社 加熱装置
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6860965B1 (en) 2000-06-23 2005-03-01 Novellus Systems, Inc. High throughput architecture for semiconductor processing
US6997993B2 (en) 2001-02-09 2006-02-14 Ngk Insulators, Ltd. Susceptor supporting construction
JP4032971B2 (ja) * 2001-04-13 2008-01-16 住友電気工業株式会社 セラミックス接合体、基板保持構造体および基板処理装置
US6730175B2 (en) * 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
JP3520074B2 (ja) 2002-03-28 2004-04-19 日本碍子株式会社 セラミックサセプターの取付構造、セラミックサセプターの支持構造およびセラミックサセプターの支持部材
US6962348B2 (en) 2002-07-29 2005-11-08 Tokyo Electron Limited Sealing apparatus having a single groove
JP4060684B2 (ja) * 2002-10-29 2008-03-12 日本発条株式会社 ステージ
US7126808B2 (en) 2003-04-01 2006-10-24 Varian Semiconductor Equipment Associates, Inc. Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma doping
US7645341B2 (en) 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP4365766B2 (ja) * 2004-10-26 2009-11-18 京セラ株式会社 ウェハ支持部材とそれを用いた半導体製造装置
US7126093B2 (en) * 2005-02-23 2006-10-24 Ngk Insulators, Ltd. Heating systems
JP4590363B2 (ja) * 2005-03-16 2010-12-01 日本碍子株式会社 ガス供給部材及びそれを用いた処理装置
TWI297908B (en) * 2005-03-16 2008-06-11 Ngk Insulators Ltd Processing device
US20060231388A1 (en) * 2005-04-14 2006-10-19 Ravi Mullapudi Multi-station sputtering and cleaning system
JP2007051317A (ja) 2005-08-16 2007-03-01 Ngk Insulators Ltd 加熱装置
US7705275B2 (en) * 2005-08-17 2010-04-27 Applied Materials, Inc. Substrate support having brazed plates and resistance heater
US7869184B2 (en) 2005-11-30 2011-01-11 Lam Research Corporation Method of determining a target mesa configuration of an electrostatic chuck
KR100804169B1 (ko) * 2005-12-31 2008-02-18 주식회사 아이피에스 박막증착챔버용 서셉터
US20070169703A1 (en) 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US7737035B1 (en) 2006-03-31 2010-06-15 Novellus Systems, Inc. Dual seal deposition process chamber and process
JP4762098B2 (ja) * 2006-09-28 2011-08-31 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP4443556B2 (ja) * 2006-12-15 2010-03-31 京セラ株式会社 試料加熱装置の製造方法
US8294069B2 (en) 2007-03-28 2012-10-23 Ngk Insulators, Ltd. Heating device for heating a wafer
JP5135915B2 (ja) * 2007-06-28 2013-02-06 東京エレクトロン株式会社 載置台構造及び熱処理装置
JP2009054871A (ja) * 2007-08-28 2009-03-12 Tokyo Electron Ltd 載置台構造及び処理装置
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
US8540819B2 (en) * 2008-03-21 2013-09-24 Ngk Insulators, Ltd. Ceramic heater
US20090277388A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Heater with detachable shaft
JP5349232B2 (ja) * 2009-09-17 2013-11-20 株式会社ニューフレアテクノロジー 成膜装置および成膜方法
DE102009044276A1 (de) * 2009-10-16 2011-05-05 Aixtron Ag CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter
JP5960384B2 (ja) 2009-10-26 2016-08-02 新光電気工業株式会社 静電チャック用基板及び静電チャック
JP5882918B2 (ja) * 2010-02-24 2016-03-09 ビーコ・インストゥルメンツ・インコーポレイテッド 温度分配制御装置を用いる処理方法および処理装置
KR20110136583A (ko) * 2010-06-15 2011-12-21 삼성엘이디 주식회사 서셉터 및 이를 구비하는 화학 기상 증착 장치
JP5791412B2 (ja) * 2010-07-26 2015-10-07 日本碍子株式会社 セラミックヒーター
KR20120014361A (ko) * 2010-08-09 2012-02-17 삼성엘이디 주식회사 서셉터 및 이를 포함하는 화학증착장치
US8840754B2 (en) 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
TWI501339B (zh) * 2010-09-24 2015-09-21 Ngk Insulators Ltd Semiconductor manufacturing device components
JP2012182221A (ja) 2011-02-28 2012-09-20 Taiheiyo Cement Corp 基板支持部材
US8801950B2 (en) 2011-03-07 2014-08-12 Novellus Systems, Inc. Reduction of a process volume of a processing chamber using a nested dynamic inert volume
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US8979087B2 (en) * 2011-07-29 2015-03-17 Applied Materials, Inc. Substrate supporting edge ring with coating for improved soak performance
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
DE102012205616B4 (de) * 2012-04-04 2016-07-14 Siltronic Ag Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung
US9490150B2 (en) * 2012-07-03 2016-11-08 Applied Materials, Inc. Substrate support for substrate backside contamination control
US9088085B2 (en) 2012-09-21 2015-07-21 Novellus Systems, Inc. High temperature electrode connections
KR101413898B1 (ko) 2012-11-06 2014-06-30 엔지케이 인슐레이터 엘티디 서셉터
US8941969B2 (en) * 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
US10125422B2 (en) 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US9558981B2 (en) * 2013-11-19 2017-01-31 Applied Materials, Inc. Control systems employing deflection sensors to control clamping forces applied by electrostatic chucks, and related methods
CN105392758B (zh) * 2014-03-27 2019-04-09 日本碍子株式会社 陶瓷板与金属制圆筒部件的接合结构
US10266943B2 (en) * 2014-06-27 2019-04-23 Applied Materials, Inc. Plasma corrosion resistive heater for high temperature processing
TWI665328B (zh) * 2014-07-02 2019-07-11 美商應用材料股份有限公司 用於電漿處理的多區域基座
US9728437B2 (en) * 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9738975B2 (en) 2015-05-12 2017-08-22 Lam Research Corporation Substrate pedestal module including backside gas delivery tube and method of making
US10177024B2 (en) * 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
US10147610B1 (en) * 2017-05-30 2018-12-04 Lam Research Corporation Substrate pedestal module including metallized ceramic tubes for RF and gas delivery

Also Published As

Publication number Publication date
KR20160133373A (ko) 2016-11-22
CN112063995A (zh) 2020-12-11
JP7168642B2 (ja) 2022-11-09
US20170321324A1 (en) 2017-11-09
US9738975B2 (en) 2017-08-22
JP2021061422A (ja) 2021-04-15
JP2016213456A (ja) 2016-12-15
US20230220549A1 (en) 2023-07-13
CN106148915A (zh) 2016-11-23
US20160333475A1 (en) 2016-11-17
KR102641003B1 (ko) 2024-02-23
KR20240031982A (ko) 2024-03-08
US20200325578A1 (en) 2020-10-15
US10655225B2 (en) 2020-05-19
CN106148915B (zh) 2020-08-21
US11634817B2 (en) 2023-04-25
CN112063995B (zh) 2023-06-27
US12398464B2 (en) 2025-08-26

Similar Documents

Publication Publication Date Title
JP6815745B2 (ja) 背面ガス供給管を備えた基板ペデスタルモジュールおよびその製造方法
JP7320563B2 (ja) 高温基板台座モジュール及びその構成要素
JP7678832B2 (ja) 半導体処理で使用するための静電チャック
KR102458099B1 (ko) 반도체 프로세싱을 위한 웨이퍼 포지셔닝 페데스탈
CN105702617B (zh) 承载环结构及包含该承载环结构的室系统
TWI688671B (zh) 減少晶圓邊緣處之背側沉積
JP2016213456A5 (OSRAM)
KR102264575B1 (ko) 기판 보유 지지 기구 및 성막 장치
JP2015185579A (ja) 基板処理装置、基板保持体、基板ホルダ及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160715

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190712

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200811

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201106

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201124

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201223

R150 Certificate of patent or registration of utility model

Ref document number: 6815745

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250