JP6808757B2 - リンドープシリコン単結晶 - Google Patents

リンドープシリコン単結晶 Download PDF

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Publication number
JP6808757B2
JP6808757B2 JP2018560252A JP2018560252A JP6808757B2 JP 6808757 B2 JP6808757 B2 JP 6808757B2 JP 2018560252 A JP2018560252 A JP 2018560252A JP 2018560252 A JP2018560252 A JP 2018560252A JP 6808757 B2 JP6808757 B2 JP 6808757B2
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Prior art keywords
single crystal
phosphorus
silicon single
resistivity
doped silicon
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JP2018560252A
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English (en)
Japanese (ja)
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JP2019504817A (ja
JP2019504817A5 (https=
Inventor
タイス、レス、スベイガード
マーチン、グレースベーンゲ
クリスチャン、ガメルトフテ、ヒンドリッシェン
スーネ、ブロ、ドゥーン
アナス、レイ
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Topsil GlobalWafers AS
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Topsil GlobalWafers AS
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2018560252A 2016-02-08 2017-02-08 リンドープシリコン単結晶 Active JP6808757B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16154695 2016-02-08
EP16154695.7 2016-02-08
PCT/EP2017/052754 WO2017137438A1 (en) 2016-02-08 2017-02-08 A phosphorus doped silicon single crystal

Publications (3)

Publication Number Publication Date
JP2019504817A JP2019504817A (ja) 2019-02-21
JP2019504817A5 JP2019504817A5 (https=) 2020-03-26
JP6808757B2 true JP6808757B2 (ja) 2021-01-06

Family

ID=55411172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018560252A Active JP6808757B2 (ja) 2016-02-08 2017-02-08 リンドープシリコン単結晶

Country Status (5)

Country Link
EP (1) EP3414367B1 (https=)
JP (1) JP6808757B2 (https=)
CN (1) CN108699724B (https=)
DK (1) DK3414367T3 (https=)
WO (1) WO2017137438A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10468148B2 (en) 2017-04-24 2019-11-05 Infineon Technologies Ag Apparatus and method for neutron transmutation doping of semiconductor wafers
JP7010179B2 (ja) * 2018-09-03 2022-01-26 株式会社Sumco 単結晶の製造方法及び装置及びシリコン単結晶インゴット
US11739437B2 (en) * 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
CN111341838B (zh) * 2020-03-09 2021-05-07 华东师范大学 硅同位素Si-30在抗中高能中子辐射半导体材料或半导体器件的应用
CA3175051A1 (en) * 2020-03-12 2021-09-16 Umicore Heavily doped n-type germanium
JP7342845B2 (ja) * 2020-11-25 2023-09-12 株式会社Sumco シリコン単結晶の製造方法
CN114990693A (zh) * 2022-04-02 2022-09-02 天津中环领先材料技术有限公司 一种ntd单晶硅退火工艺
EP4350055A1 (de) * 2022-10-06 2024-04-10 Siltronic AG Verfahren zur herstellung eines einkristalls aus silizium und halbleiterscheibe aus einkristallinem silizium
CN118422319A (zh) * 2024-05-27 2024-08-02 宁夏中欣晶圆半导体科技有限公司 高电阻率单晶材料的制备方法
CN121675078A (zh) * 2024-08-23 2026-03-17 隆基绿能科技股份有限公司 一种光伏单晶硅片和包含其的太阳能电池

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904767A (en) * 1996-08-29 1999-05-18 Industrial Technology Research Institute Neutron transmutation doping of silicon single crystals
DE19738732A1 (de) * 1997-09-04 1999-03-18 Wacker Siltronic Halbleitermat Neutronendotierte Siliciumscheiben
DE10137856B4 (de) 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
JP2005012090A (ja) * 2003-06-20 2005-01-13 Toshiba Corp 半導体ウェーハの製造方法及び半導体装置の製造方法
JP2005035816A (ja) 2003-07-17 2005-02-10 Shin Etsu Handotai Co Ltd シリコン単結晶製造方法及びシリコン単結晶
CN1325701C (zh) * 2006-04-26 2007-07-11 天津市环欧半导体材料技术有限公司 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法
CN101680108A (zh) 2007-04-13 2010-03-24 Topsil半导体材料股份公司 生产单晶的方法和设备
JP2008308383A (ja) * 2007-06-18 2008-12-25 Covalent Materials Corp シリコン単結晶の製造方法
JP5283543B2 (ja) * 2009-03-09 2013-09-04 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
JP5201077B2 (ja) * 2009-05-15 2013-06-05 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP5194146B2 (ja) * 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
CN102534752A (zh) * 2012-03-08 2012-07-04 天津市环欧半导体材料技术有限公司 一种制造区熔硅单晶的直拉区熔气掺法
JP5880353B2 (ja) 2012-08-28 2016-03-09 信越半導体株式会社 シリコン単結晶の育成方法
JP5921498B2 (ja) 2013-07-12 2016-05-24 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の製造方法

Also Published As

Publication number Publication date
JP2019504817A (ja) 2019-02-21
EP3414367B1 (en) 2020-02-26
WO2017137438A1 (en) 2017-08-17
CN108699724A (zh) 2018-10-23
DK3414367T3 (da) 2020-05-25
CN108699724B (zh) 2021-05-04
EP3414367A1 (en) 2018-12-19

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