CN1325701C - 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 - Google Patents
气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 Download PDFInfo
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- CN1325701C CN1325701C CNB2006100135339A CN200610013533A CN1325701C CN 1325701 C CN1325701 C CN 1325701C CN B2006100135339 A CNB2006100135339 A CN B2006100135339A CN 200610013533 A CN200610013533 A CN 200610013533A CN 1325701 C CN1325701 C CN 1325701C
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- 239000013078 crystal Substances 0.000 title claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000007789 gas Substances 0.000 claims abstract description 144
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052786 argon Inorganic materials 0.000 claims abstract description 50
- 230000033001 locomotion Effects 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 16
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 27
- 238000012423 maintenance Methods 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 15
- 229910000085 borane Inorganic materials 0.000 claims description 14
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 14
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 238000005273 aeration Methods 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000004857 zone melting Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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CNB2006100135339A CN1325701C (zh) | 2006-04-26 | 2006-04-26 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
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CNB2006100135339A CN1325701C (zh) | 2006-04-26 | 2006-04-26 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
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CN1865529A CN1865529A (zh) | 2006-11-22 |
CN1325701C true CN1325701C (zh) | 2007-07-11 |
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CNB2006100135339A Active CN1325701C (zh) | 2006-04-26 | 2006-04-26 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102534749A (zh) * | 2012-02-14 | 2012-07-04 | 天津市环欧半导体材料技术有限公司 | 用直拉区熔法制备6英寸n型太阳能硅单晶的方法 |
CN102839290B (zh) * | 2012-09-25 | 2013-12-11 | 山西龙镁伟业科技有限公司 | 一种还原罐同级分段式真空装置及方法 |
CN103147118B (zh) * | 2013-02-25 | 2016-03-30 | 天津市环欧半导体材料技术有限公司 | 一种利用直拉区熔法制备太阳能级硅单晶的方法 |
CN104328482A (zh) * | 2014-09-30 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | 一种大直径区熔硅单晶的生长方法 |
CN108699724B (zh) * | 2016-02-08 | 2021-05-04 | Topsil 环球晶圆股份公司 | 磷掺杂硅单晶 |
CN106591948B (zh) * | 2017-01-21 | 2019-10-25 | 台州市一能科技有限公司 | 一种太阳能电池用n型多晶硅及其生产方法 |
CN108411357A (zh) * | 2018-04-13 | 2018-08-17 | 天津市环欧半导体材料技术有限公司 | 一种提高区熔气相掺杂稳定性的掺杂装置及方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4126509A (en) * | 1975-11-14 | 1978-11-21 | Siemens Aktiengesellschaft | Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal |
CN1095505C (zh) * | 2000-03-30 | 2002-12-04 | 天津市环欧半导体材料技术有限公司 | 生产硅单晶的直拉区熔法 |
CN1455029A (zh) * | 2003-04-03 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
CN1455028A (zh) * | 2002-12-30 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN1724723A (zh) * | 2005-06-15 | 2006-01-25 | 天津市环欧半导体材料技术有限公司 | 大直径区熔硅单晶制备方法 |
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2006
- 2006-04-26 CN CNB2006100135339A patent/CN1325701C/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4126509A (en) * | 1975-11-14 | 1978-11-21 | Siemens Aktiengesellschaft | Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal |
CN1095505C (zh) * | 2000-03-30 | 2002-12-04 | 天津市环欧半导体材料技术有限公司 | 生产硅单晶的直拉区熔法 |
CN1455028A (zh) * | 2002-12-30 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN1455029A (zh) * | 2003-04-03 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
CN1724723A (zh) * | 2005-06-15 | 2006-01-25 | 天津市环欧半导体材料技术有限公司 | 大直径区熔硅单晶制备方法 |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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