CN1333114C - 气相掺杂区熔硅单晶的生产方法 - Google Patents
气相掺杂区熔硅单晶的生产方法 Download PDFInfo
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- CN1333114C CN1333114C CNB2006100134976A CN200610013497A CN1333114C CN 1333114 C CN1333114 C CN 1333114C CN B2006100134976 A CNB2006100134976 A CN B2006100134976A CN 200610013497 A CN200610013497 A CN 200610013497A CN 1333114 C CN1333114 C CN 1333114C
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- single crystal
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 239000013078 crystal Substances 0.000 title claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 230000033001 locomotion Effects 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 112
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 72
- 229910052786 argon Inorganic materials 0.000 claims description 36
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 24
- 238000012423 maintenance Methods 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 12
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 12
- 229910000085 borane Inorganic materials 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 11
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000004857 zone melting Methods 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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CNB2006100134976A CN1333114C (zh) | 2006-04-21 | 2006-04-21 | 气相掺杂区熔硅单晶的生产方法 |
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CNB2006100134976A CN1333114C (zh) | 2006-04-21 | 2006-04-21 | 气相掺杂区熔硅单晶的生产方法 |
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CN1865531A CN1865531A (zh) | 2006-11-22 |
CN1333114C true CN1333114C (zh) | 2007-08-22 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5049544B2 (ja) * | 2006-09-29 | 2012-10-17 | Sumco Techxiv株式会社 | シリコン単結晶の製造方法、シリコン単結晶の製造制御装置、及びプログラム |
CN101979719B (zh) * | 2010-11-03 | 2011-07-13 | 天津市环欧半导体材料技术有限公司 | 一种气相重掺磷区熔硅单晶的生产方法 |
CN103160912B (zh) * | 2011-12-08 | 2015-11-11 | 有研半导体材料有限公司 | 一种掺杂区熔单晶的制备工艺 |
CN102808216A (zh) * | 2012-08-22 | 2012-12-05 | 北京京运通科技股份有限公司 | 一种区熔单晶硅生产工艺方法及区熔热场 |
CN103866377A (zh) * | 2012-12-14 | 2014-06-18 | 有研半导体材料股份有限公司 | 一种获得宽范围电阻率区熔硅单晶的气掺系统装置及方法 |
CN103076766B (zh) * | 2013-01-30 | 2018-07-06 | 佛山市定中机械有限公司 | 一种基于数字运动控制器的印罐机数控系统 |
CN103147118B (zh) * | 2013-02-25 | 2016-03-30 | 天津市环欧半导体材料技术有限公司 | 一种利用直拉区熔法制备太阳能级硅单晶的方法 |
CN103114326A (zh) * | 2013-02-25 | 2013-05-22 | 天津市环欧半导体材料技术有限公司 | 一种区熔气相掺杂硅单晶的生产方法 |
CN104328484B (zh) * | 2014-11-17 | 2017-02-22 | 天津市环欧半导体材料技术有限公司 | 一种区熔气掺单晶的掺杂气路 |
CN104313697A (zh) * | 2014-11-17 | 2015-01-28 | 天津市环欧半导体材料技术有限公司 | 一种改进的区熔气掺单晶的掺杂气路 |
CN107287655A (zh) * | 2016-04-12 | 2017-10-24 | 上海新昇半导体科技有限公司 | 单晶硅锭及晶圆的形成方法 |
CN108411357A (zh) * | 2018-04-13 | 2018-08-17 | 天津市环欧半导体材料技术有限公司 | 一种提高区熔气相掺杂稳定性的掺杂装置及方法 |
CN113943973A (zh) * | 2021-10-26 | 2022-01-18 | 中国电子科技集团公司第四十六研究所 | 一种拉制高电阻率区熔单晶硅的工艺方法 |
Citations (7)
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JPH0365583A (ja) * | 1989-07-29 | 1991-03-20 | Minoda Buroiraa Fuaamu:Kk | 特殊発酵菌堆肥料製法 |
JPH09286688A (ja) * | 1996-04-22 | 1997-11-04 | Komatsu Electron Metals Co Ltd | シリコン単結晶へのガスドープ方法 |
JP2002134518A (ja) * | 2000-10-27 | 2002-05-10 | Mitsubishi Materials Silicon Corp | 抵抗率を調整したシリコンウェーハ及びそのウェーハの製造方法 |
CN1455029A (zh) * | 2003-04-03 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
CN1455028A (zh) * | 2002-12-30 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
JP2005035816A (ja) * | 2003-07-17 | 2005-02-10 | Shin Etsu Handotai Co Ltd | シリコン単結晶製造方法及びシリコン単結晶 |
WO2006003782A1 (ja) * | 2004-06-30 | 2006-01-12 | Shin-Etsu Handotai Co., Ltd. | シリコン単結晶の製造方法及び製造装置 |
-
2006
- 2006-04-21 CN CNB2006100134976A patent/CN1333114C/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0365583A (ja) * | 1989-07-29 | 1991-03-20 | Minoda Buroiraa Fuaamu:Kk | 特殊発酵菌堆肥料製法 |
JPH09286688A (ja) * | 1996-04-22 | 1997-11-04 | Komatsu Electron Metals Co Ltd | シリコン単結晶へのガスドープ方法 |
JP2002134518A (ja) * | 2000-10-27 | 2002-05-10 | Mitsubishi Materials Silicon Corp | 抵抗率を調整したシリコンウェーハ及びそのウェーハの製造方法 |
CN1455028A (zh) * | 2002-12-30 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN1455029A (zh) * | 2003-04-03 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
JP2005035816A (ja) * | 2003-07-17 | 2005-02-10 | Shin Etsu Handotai Co Ltd | シリコン単結晶製造方法及びシリコン単結晶 |
WO2006003782A1 (ja) * | 2004-06-30 | 2006-01-12 | Shin-Etsu Handotai Co., Ltd. | シリコン単結晶の製造方法及び製造装置 |
Non-Patent Citations (3)
Title |
---|
区熔硅单晶的多级芯掺杂方法 王喜民,上海有色金属,第4卷第3期 1983 * |
硅区熔气相掺杂工艺的研究 樊铭德,葛涛,上海有色金属,第8卷第6期 1987 * |
硅区熔气相掺杂工艺的研究 樊铭德,葛涛,上海有色金属,第8卷第6期 1987;区熔硅单晶的多级芯掺杂方法 王喜民,上海有色金属,第4卷第3期 1983 * |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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