CN101979719B - 一种气相重掺磷区熔硅单晶的生产方法 - Google Patents
一种气相重掺磷区熔硅单晶的生产方法 Download PDFInfo
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- CN101979719B CN101979719B CN 201010529154 CN201010529154A CN101979719B CN 101979719 B CN101979719 B CN 101979719B CN 201010529154 CN201010529154 CN 201010529154 CN 201010529154 A CN201010529154 A CN 201010529154A CN 101979719 B CN101979719 B CN 101979719B
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- 239000013078 crystal Substances 0.000 title claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 24
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 23
- 239000011574 phosphorus Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 26
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000004857 zone melting Methods 0.000 claims description 5
- 238000007664 blowing Methods 0.000 claims description 3
- 238000010899 nucleation Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000001052 transient effect Effects 0.000 abstract description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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CN 201010529154 CN101979719B (zh) | 2010-11-03 | 2010-11-03 | 一种气相重掺磷区熔硅单晶的生产方法 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102304757A (zh) * | 2011-10-11 | 2012-01-04 | 天津市环欧半导体材料技术有限公司 | 用直拉区熔法制备6英寸p型太阳能硅单晶的方法 |
CN102383185B (zh) * | 2011-10-12 | 2014-03-05 | 天津市环欧半导体材料技术有限公司 | 一种用于生产直拉重掺磷单晶的防爆装置及防爆方法 |
CN103160912B (zh) * | 2011-12-08 | 2015-11-11 | 有研半导体材料有限公司 | 一种掺杂区熔单晶的制备工艺 |
CN102534749A (zh) * | 2012-02-14 | 2012-07-04 | 天津市环欧半导体材料技术有限公司 | 用直拉区熔法制备6英寸n型太阳能硅单晶的方法 |
CN103361732A (zh) * | 2013-07-16 | 2013-10-23 | 江西旭阳雷迪高科技股份有限公司 | 一种n型重掺磷母合金硅棒制备工艺 |
CN108411357A (zh) * | 2018-04-13 | 2018-08-17 | 天津市环欧半导体材料技术有限公司 | 一种提高区熔气相掺杂稳定性的掺杂装置及方法 |
CN109440183B (zh) * | 2018-12-20 | 2020-11-13 | 天津中环领先材料技术有限公司 | 一种优化型大直径区熔硅单晶收尾方法 |
CN109837584A (zh) * | 2019-03-29 | 2019-06-04 | 山西潞安太阳能科技有限责任公司 | 一种直拉硅芯原料棒的熔接工艺 |
CN117766378B (zh) * | 2023-12-22 | 2024-08-09 | 上海领矽半导体有限公司 | 一种低电容tvs用硅外延材料的制备方法 |
Citations (3)
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CN1455028A (zh) * | 2002-12-30 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN1865531A (zh) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN101845667A (zh) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | 一种高阻硅单晶的制备方法 |
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JP2002134518A (ja) * | 2000-10-27 | 2002-05-10 | Mitsubishi Materials Silicon Corp | 抵抗率を調整したシリコンウェーハ及びそのウェーハの製造方法 |
JP2005035816A (ja) * | 2003-07-17 | 2005-02-10 | Shin Etsu Handotai Co Ltd | シリコン単結晶製造方法及びシリコン単結晶 |
WO2006003782A1 (ja) * | 2004-06-30 | 2006-01-12 | Shin-Etsu Handotai Co., Ltd. | シリコン単結晶の製造方法及び製造装置 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1455028A (zh) * | 2002-12-30 | 2003-11-12 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN1865531A (zh) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN101845667A (zh) * | 2010-06-30 | 2010-09-29 | 峨嵋半导体材料研究所 | 一种高阻硅单晶的制备方法 |
Non-Patent Citations (2)
Title |
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郭丽华.硅单晶汽相掺杂技术的研究.《中国优秀硕士学位论文全文数据库》.2009,全文. * |
阎萍等.高阻真空区熔硅单晶的生长.《半导体技术》.2007,第32卷(第4期),301-303. * |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |