CN109440183B - 一种优化型大直径区熔硅单晶收尾方法 - Google Patents
一种优化型大直径区熔硅单晶收尾方法 Download PDFInfo
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- CN109440183B CN109440183B CN201811565908.1A CN201811565908A CN109440183B CN 109440183 B CN109440183 B CN 109440183B CN 201811565908 A CN201811565908 A CN 201811565908A CN 109440183 B CN109440183 B CN 109440183B
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- 239000013078 crystal Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 238000004857 zone melting Methods 0.000 title claims abstract description 20
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 229920005591 polysilicon Polymers 0.000 claims abstract description 3
- 230000008569 process Effects 0.000 claims description 17
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 238000005336 cracking Methods 0.000 claims description 7
- 238000004321 preservation Methods 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 230000001174 ascending effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201811565908.1A CN109440183B (zh) | 2018-12-20 | 2018-12-20 | 一种优化型大直径区熔硅单晶收尾方法 |
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CN201811565908.1A CN109440183B (zh) | 2018-12-20 | 2018-12-20 | 一种优化型大直径区熔硅单晶收尾方法 |
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CN109440183A CN109440183A (zh) | 2019-03-08 |
CN109440183B true CN109440183B (zh) | 2020-11-13 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110318096A (zh) * | 2019-06-28 | 2019-10-11 | 北京天能运通晶体技术有限公司 | 区熔硅单晶收尾方法和拉制方法 |
CN112941615B (zh) * | 2019-12-10 | 2022-05-20 | 有研半导体硅材料股份公司 | 一种区熔硅单晶的收尾方法 |
CN117431620B (zh) * | 2023-12-18 | 2024-03-01 | 麦斯克电子材料股份有限公司 | 一种减少大尺寸硅单晶氧化层错的拉晶方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1865528A (zh) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | 大直径区熔硅单晶生产方法 |
CN101979719A (zh) * | 2010-11-03 | 2011-02-23 | 天津市环欧半导体材料技术有限公司 | 一种气相重掺磷区熔硅单晶的生产方法 |
CN104328482A (zh) * | 2014-09-30 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | 一种大直径区熔硅单晶的生长方法 |
CN107366017A (zh) * | 2017-09-04 | 2017-11-21 | 青海鑫诺光电科技有限公司 | 一种单晶硅收尾设备及其使用方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103147118B (zh) * | 2013-02-25 | 2016-03-30 | 天津市环欧半导体材料技术有限公司 | 一种利用直拉区熔法制备太阳能级硅单晶的方法 |
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- 2018-12-20 CN CN201811565908.1A patent/CN109440183B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1865528A (zh) * | 2006-04-21 | 2006-11-22 | 天津市环欧半导体材料技术有限公司 | 大直径区熔硅单晶生产方法 |
CN101979719A (zh) * | 2010-11-03 | 2011-02-23 | 天津市环欧半导体材料技术有限公司 | 一种气相重掺磷区熔硅单晶的生产方法 |
CN104328482A (zh) * | 2014-09-30 | 2015-02-04 | 天津市环欧半导体材料技术有限公司 | 一种大直径区熔硅单晶的生长方法 |
CN107366017A (zh) * | 2017-09-04 | 2017-11-21 | 青海鑫诺光电科技有限公司 | 一种单晶硅收尾设备及其使用方法 |
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Address after: 300384 Tianjin Binhai New Area Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region after: China Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 300384 Tianjin Binhai New Area Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Country or region before: China Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. |
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